{"id":73397,"date":"2020-03-09T08:42:28","date_gmt":"2020-03-09T05:42:28","guid":{"rendered":"https:\/\/prohoster.info\/blog\/administrirovanie\/vvedenie-v-ssd-chast-4-fizicheskaya"},"modified":"2020-03-09T08:42:28","modified_gmt":"2020-03-09T05:42:28","slug":"vvedenie-v-ssd-chast-4-fizicheskaya","status":"publish","type":"post","link":"https:\/\/prohoster.info\/cs\/blog\/administrirovanie\/vvedenie-v-ssd-chast-4-fizicheskaya","title":{"rendered":"\u00davod do SSD. \u010c\u00e1st 4. Fyzick\u00e1","gt_translate_keys":[{"key":"rendered","format":"text"}]},"content":{"rendered":"<p><img decoding=\"async\" alt=\"\u00davod do SSD. \u010c\u00e1st 4. Fyzick\u00e1\" src=\"\/wp-content\/uploads\/2020\/03\/07ee6f41981982df22293878e6c6d99a.png\" style=\"display:block;margin: 0 auto;\" \/><br \/>\nMinul\u00e9 \u010d\u00e1sti cyklu \u201e\u00davod do SSD\u201c \u010dten\u00e1\u0159\u016fm p\u0159ibl\u00ed\u017eily historii vzniku SSD disk\u016f, rozhran\u00ed pro jejich komunikaci a popul\u00e1rn\u00ed form\u00e1ty. \u010ctvrt\u00e1 \u010d\u00e1st se zam\u011b\u0159\u00ed na ukl\u00e1d\u00e1n\u00ed dat uvnit\u0159 disk\u016f.<br \/>\n<noindex><a rel=\"nofollow\" name=\"habracut\"><\/a><\/noindex><br \/>\n<i>V p\u0159edchoz\u00edch \u010dl\u00e1nc\u00edch cyklu:<\/i><\/p>\n<ol>\n<li><i><noindex><a rel=\"nofollow\" href=\"https:\/\/habr.com\/ru\/company\/selectel\/blog\/475304\/\">Historie vzniku HDD a SSD<\/a><\/noindex><\/i><\/li>\n<li><i><noindex><a rel=\"nofollow\" href=\"https:\/\/habr.com\/ru\/company\/selectel\/blog\/478684\/\">Vznik rozhran\u00ed pro \u00falo\u017ei\u0161t\u011b<\/a><\/noindex><\/i><\/li>\n<li><i><noindex><a rel=\"nofollow\" href=\"https:\/\/habr.com\/ru\/company\/selectel\/blog\/488230\/\">Specifika form\u00e1t\u016f<\/a><\/noindex><\/i><\/li>\n<\/ol>\n<p>\nUkl\u00e1d\u00e1n\u00ed dat do polovodi\u010dov\u00fdch disk\u016f lze rozd\u011blit do dvou logick\u00fdch \u010d\u00e1st\u00ed: ukl\u00e1d\u00e1n\u00ed informac\u00ed v jedn\u00e9 bu\u0148ce a organizace ukl\u00e1d\u00e1n\u00ed bun\u011bk.<\/p>\n<p>Ka\u017ed\u00e1 bu\u0148ka polovodi\u010dov\u00e9ho disku uchov\u00e1v\u00e1 <b>jeden nebo v\u00edce bit\u016f informac\u00ed<\/b>. Pro uchov\u00e1n\u00ed informac\u00ed se pou\u017e\u00edvaj\u00ed r\u016fzn\u00e9 <b>fyzik\u00e1ln\u00ed procesy<\/b>. P\u0159i v\u00fdvoji polovodi\u010dov\u00fdch disk\u016f byly zohledn\u011bny n\u00e1sleduj\u00edc\u00ed fyzik\u00e1ln\u00ed veli\u010diny pro k\u00f3dov\u00e1n\u00ed informac\u00ed:<\/p>\n<ul>\n<li><b>elektrick\u00e9 n\u00e1boje<\/b> (v\u010detn\u011b Flash pam\u011bti);<\/li>\n<li><b>magnetick\u00e9 momenty<\/b> (magnetorezistivn\u00ed pam\u011b\u0165);<\/li>\n<li><b>f\u00e1zov\u00e9 stavy<\/b> (pam\u011b\u0165 s f\u00e1zov\u00fdmi zm\u011bnami).<\/li>\n<\/ul>\n<p><\/p>\n<h2>Pam\u011b\u0165 zalo\u017een\u00e1 na elektrick\u00fdch n\u00e1boj\u00edch<\/h2>\n<p>\nK\u00f3dov\u00e1n\u00ed informac\u00ed pomoc\u00ed z\u00e1porn\u00e9ho n\u00e1boje je z\u00e1kladem n\u011bkolika \u0159e\u0161en\u00ed:<\/p>\n<ul>\n<li>mazateln\u00e1 UV-ROM (EPROM);<\/li>\n<li>elektricky mazateln\u00e9 ROM (EEPROM);<\/li>\n<li>Flash pam\u011b\u0165.<\/li>\n<\/ul>\n<p>\n<img decoding=\"async\" alt=\"\u00davod do SSD. \u010c\u00e1st 4. Fyzick\u00e1\" src=\"\/wp-content\/uploads\/2020\/03\/8859aa8e143aeefc0a33f8255f1708f3.png\" style=\"display:block;margin: 0 auto;\" \/><br \/>\nKa\u017ed\u00e1 pam\u011b\u0165ov\u00e1 bu\u0148ka je <b>poln\u00ed MOSFET s plovouc\u00edm hradlem<\/b>, ve kter\u00e9 je uchov\u00e1v\u00e1na z\u00e1porn\u00fd n\u00e1boj. Jeho rozd\u00edl oproti b\u011b\u017en\u00e9mu MOSFETu spo\u010d\u00edv\u00e1 v p\u0159\u00edtomnosti plovouc\u00edho hradla \u2014 vodi\u010de v dielektrick\u00e9 vrstv\u011b.<\/p>\n<p>P\u0159i vytv\u00e1\u0159en\u00ed potenci\u00e1lov\u00e9ho rozd\u00edlu mezi dren\u00e1\u017e\u00ed a zdrojem a p\u0159\u00edtomnosti kladn\u00e9ho potenci\u00e1lu na hradle pote\u010de proud od zdroje k dren\u00e1\u017ei. Nicm\u00e9n\u011b, p\u0159i dostate\u010dn\u011b velk\u00e9m potenci\u00e1lov\u00e9m rozd\u00edlu n\u011bkte\u0159\u00ed elektrony \u201eproraz\u00ed\u201c dielektrickou vrstvu a dostanou se do plovouc\u00edho hradla. Tento jev se naz\u00fdv\u00e1 <noindex><a rel=\"nofollow\" href=\"https:\/\/ru.wikipedia.org\/wiki\/%D0%A2%D1%83%D0%BD%D0%BD%D0%B5%D0%BB%D1%8C%D0%BD%D1%8B%D0%B9_%D1%8D%D1%84%D1%84%D0%B5%D0%BA%D1%82\">tunelov\u00fd efekt<\/a><\/noindex>.<\/p>\n<p><img decoding=\"async\" alt=\"\u00davod do SSD. \u010c\u00e1st 4. Fyzick\u00e1\" src=\"\/wp-content\/uploads\/2020\/03\/7b6141b5e53940bcc073a3ee1c327eec.png\" style=\"display:block;margin: 0 auto;\" \/><br \/>\nZ\u00e1porn\u011b nabit\u00e9 plovouc\u00ed hradlo vytv\u00e1\u0159\u00ed elektrick\u00e9 pole, kter\u00e9 br\u00e1n\u00ed toku proudu od zdroje k dren\u00e1\u017ei. Nav\u00edc, p\u0159\u00edtomnost elektron\u016f v plovouc\u00edm hradle zvy\u0161uje prahov\u00e9 nap\u011bt\u00ed, p\u0159i kter\u00e9m se tranzistor otev\u00edr\u00e1. P\u0159i ka\u017ed\u00e9m \u201ez\u00e1pisu\u201c do plovouc\u00edho hradla tranzistoru je dielektrick\u00e1 vrstva m\u00edrn\u011b po\u0161kozena, co\u017e omezuje po\u010det p\u0159episovac\u00edch cykl\u016f ka\u017ed\u00e9 bu\u0148ky.<\/p>\n<blockquote><p>Poln\u00ed MOS tranzistory s plovouc\u00edmi hradly byly vyvinuty Dawonem Kahngem a Simonem Min Sz\u00e9m z Bell Labs v roce 1967. Pozd\u011bji, p\u0159i studiu vad integrovan\u00fdch obvod\u016f, bylo zji\u0161t\u011bno, \u017ee n\u00e1boj v plovouc\u00edm hradle zm\u011bnil prahov\u00e9 nap\u011bt\u00ed, kter\u00e9 otev\u00edr\u00e1 tranzistor. Tento objev p\u0159im\u011bl Dova Frohmana za\u010d\u00edt pr\u00e1ci na pam\u011bti zalo\u017een\u00e9 na tomto jevu.<\/p><\/blockquote>\n<p>Zm\u011bna prahov\u00e9ho nap\u011bt\u00ed umo\u017e\u0148uje 'programov\u00e1n\u00ed' tranzistor\u016f. Tranzistory s n\u00e1bojem v plovouc\u00edm hradle se neotev\u0159ou, pokud je na hradlo aplikov\u00e1no nap\u011bt\u00ed v\u011bt\u0161\u00ed ne\u017e prahov\u00e9 nap\u011bt\u00ed pro tranzistor bez elektron\u016f, ale men\u0161\u00ed ne\u017e prahov\u00e9 nap\u011bt\u00ed pro tranzistor s elektrony. Ozna\u010dme tuto hodnotu <b>nap\u011bt\u00ed \u010dten\u00ed<\/b>.<\/p>\n<h3>Erasable Programmable Read-Only Memory<\/h3>\n<p>\n<noindex><a rel=\"nofollow\" href=\"https:\/\/ru.wikipedia.org\/wiki\/EPROM\"><img decoding=\"async\" alt=\"\u00davod do SSD. \u010c\u00e1st 4. Fyzick\u00e1\" src=\"\/wp-content\/uploads\/2020\/03\/bfe650362b93b530401453130147d679.png\" style=\"display:block;margin: 0 auto;\" \/><\/a><\/noindex><br \/>\nV roce 1971 vytvo\u0159il zam\u011bstnanec Intelu, Dov Frohman, p\u0159episovatelnou pam\u011b\u0165 na tranzistorech, nazvanou <b>Erasable Programmable Read-Only Memory (EPROM)<\/b>. Z\u00e1pis do pam\u011bti se prov\u00e1d\u011bl pomoc\u00ed speci\u00e1ln\u00edho za\u0159\u00edzen\u00ed \u2014 program\u00e1toru. Program\u00e1tor aplikuje na \u010dip vy\u0161\u0161\u00ed nap\u011bt\u00ed, ne\u017e je pou\u017e\u00edv\u00e1no v digit\u00e1ln\u00edch obvodech, a t\u00edm 'zap\u00ed\u0161e' elektrony do plovouc\u00edch hradel tranzistor\u016f tam, kde je to pot\u0159eba.<\/p>\n<p><noindex><a rel=\"nofollow\" href=\"https:\/\/ru.wikipedia.org\/wiki\/EPROM\"><img decoding=\"async\" alt=\"\u00davod do SSD. \u010c\u00e1st 4. Fyzick\u00e1\" src=\"\/wp-content\/uploads\/2020\/03\/959b0d6bac92dafb1eb4aa46ea03952c.png\" style=\"display:block;margin: 0 auto;\" \/><\/a><\/noindex><br \/>\nV EPROM pam\u011bti nebylo p\u0159edpokl\u00e1d\u00e1no elektrick\u00e9 vymaz\u00e1n\u00ed plovouc\u00edch hradel tranzistor\u016f. M\u00edsto toho se navrhovalo ovlivnit tranzistory siln\u00fdm ultrafialov\u00fdm z\u00e1\u0159en\u00edm, jeho\u017e fotony dod\u00e1vaj\u00ed elektron\u016fm energii pot\u0159ebnou k opu\u0161t\u011bn\u00ed plovouc\u00edho hradla. Aby UV sv\u011btlo mohlo proniknout dovnit\u0159 \u010dipu, byla na kryt p\u0159id\u00e1na k\u0159emenn\u00e1 skla.<\/p>\n<p><noindex><a rel=\"nofollow\" href=\"https:\/\/newsroom.intel.com\/news\/intel-50-qa-intels-dov-frohman-inventor-eprom\/#gs.wum63d\"><img decoding=\"async\" alt=\"\u00davod do SSD. \u010c\u00e1st 4. Fyzick\u00e1\" src=\"\/wp-content\/uploads\/2020\/03\/725b3ed07b0a5c5ceb285f6b7e234f08.png\" style=\"display:block;margin: 0 auto;\" \/><\/a><\/noindex><\/p>\n<blockquote><p>Frohman poprv\u00e9 p\u0159edstavil sv\u016fj prototyp EPROM v \u00fanoru 1971 na konferenci o pevn\u00fdch pam\u011bt\u00edch ve Filadelfii. Gordon Moore si vzpom\u00edn\u00e1 na demonstraci: 'Dov demonstroval bitov\u00fd vzor v bu\u0148k\u00e1ch pam\u011bti EPROM. Kdy\u017e na bu\u0148ky p\u016fsobilo ultrafialov\u00e9 sv\u011btlo, bity zmizely jeden po druh\u00e9m, dokud nezmizel zn\u00e1m\u00fd logotyp Intelu \u00fapln\u011b. \u2026 Bity vymizely, a kdy\u017e posledn\u00ed z nich zmizel, cel\u00e9 publikum propuklo v potlesk. Dova \u010dl\u00e1nek byl uzn\u00e1n jako nejlep\u0161\u00ed na konferenci.'<i> \u2014 P\u0159eklad \u010dl\u00e1nku <noindex><a rel=\"nofollow\" href=\"https:\/\/newsroom.intel.com\/news\/intel-at-50-erasable-programmable-read-only-memory\">newsroom.intel.com<\/a><\/noindex><\/i><\/p><\/blockquote>\n<p>EPROM pam\u011b\u0165 je dra\u017e\u0161\u00ed ne\u017e p\u0159edchoz\u00ed 'jednor\u00e1zov\u00e9' pam\u011b\u0165ov\u00e9 za\u0159\u00edzen\u00ed (ROM), nicm\u00e9n\u011b mo\u017enost p\u0159episov\u00e1n\u00ed umo\u017e\u0148uje rychleji ladit obvody a zkracovat dobu v\u00fdvoje nov\u00e9ho hardwaru.<\/p>\n<p>P\u0159episov\u00e1n\u00ed ROM pomoc\u00ed ultrafialov\u00e9ho sv\u011btla bylo v\u00fdznamn\u00fdm pokrokem, nicm\u00e9n\u011b my\u0161lenka elektrick\u00e9ho p\u0159episov\u00e1n\u00ed ji\u017e 'visela ve vzduchu'.<\/p>\n<h3>Elektricky vymazateln\u00e1 programovateln\u00e1 pam\u011b\u0165 pouze ke \u010dten\u00ed<\/h3>\n<p>\nv roce 1972 p\u0159edstavili t\u0159i Japonci: Yasuo Tarui, Yutaka Hayashi a Kiyoko Nagai prvn\u00ed elektricky vymazatelnou trvalou pam\u011b\u0165 (Electronically Erasable Programmable Read-Only Memory, EEPROM nebo E2PROM). Pozd\u011bji se jejich v\u011bdeck\u00e9 v\u00fdzkumy staly sou\u010d\u00e1st\u00ed patent\u016f na komer\u010dn\u00ed realizace EEPROM pam\u011bti.<\/p>\n<p>Ka\u017ed\u00e1 bu\u0148ka EEPROM pam\u011bti se skl\u00e1d\u00e1 z n\u011bkolika tranzistor\u016f:<\/p>\n<ul>\n<li>tranzistor s plovouc\u00edm gate pro ukl\u00e1d\u00e1n\u00ed bitu;<\/li>\n<li>tranzistor pro \u0159\u00edzen\u00ed re\u017eimu \u010dten\u00ed-z\u00e1pisu.<\/li>\n<\/ul>\n<p>\nTakov\u00e1 konstrukce zna\u010dn\u011b komplikuje zapojen\u00ed elektrick\u00e9ho obvodu, proto se EEPROM pam\u011b\u0165 pou\u017e\u00edvala v p\u0159\u00edpadech, kdy mal\u00fd objem pam\u011bti nebyl kritick\u00fd. Pro ukl\u00e1d\u00e1n\u00ed velk\u00e9ho objemu dat se st\u00e1le pou\u017e\u00edvala EPROM.<\/p>\n<h3>Flash pam\u011b\u0165<\/h3>\n<p>\nFlash pam\u011b\u0165, kter\u00e1 kombinuje nejlep\u0161\u00ed vlastnosti EPROM a EEPROM, byla vyvinuta japonsk\u00fdm profesorem Fujio Masuokou, in\u017een\u00fdrem spole\u010dnosti Toshiba, v roce 1980. Prvn\u00ed varianta byla nazv\u00e1na NOR flash pam\u011b\u0165 a, stejn\u011b jako jej\u00ed p\u0159edch\u016fdci, je zalo\u017eena na MOSFET tranzistorech s plovouc\u00edm gate.<\/p>\n<p><img decoding=\"async\" alt=\"\u00davod do SSD. \u010c\u00e1st 4. Fyzick\u00e1\" src=\"\/wp-content\/uploads\/2020\/03\/afb642e62142301a0430736f88a747a9.png\" style=\"display:block;margin: 0 auto;\" \/><br \/>\nNOR flash pam\u011b\u0165 je dvourozm\u011brn\u00e9 pole tranzistor\u016f. Gate tranzistor\u016f jsou p\u0159ipojeny k \u0159\u00e1dku slov, zat\u00edmco v\u00fdvody jsou p\u0159ipojeny k \u0159\u00e1dku bit\u016f. P\u0159i aplikaci nap\u011bt\u00ed na \u0159\u00e1dek slov se tranzistory obsahuj\u00edc\u00ed elektrony, tedy ukl\u00e1daj\u00edc\u00ed 'jedni\u010dku', neotev\u0159ou a proud nepote\u010de. Na z\u00e1klad\u011b p\u0159\u00edtomnosti nebo absence proudu na \u0159\u00e1dku bitu se vyvozuje hodnota bitu.<\/p>\n<p><img decoding=\"async\" alt=\"\u00davod do SSD. \u010c\u00e1st 4. Fyzick\u00e1\" src=\"\/wp-content\/uploads\/2020\/03\/53a8762b0e7cec9b6ebdf5fb91e9b328.png\" style=\"display:block;margin: 0 auto;\" \/><br \/>\nO sedm let pozd\u011bji Fujio Masuoka vyvinul NAND flash pam\u011b\u0165. Tento typ pam\u011bti se li\u0161\u00ed po\u010dtem tranzistor\u016f na bitov\u00e9m \u0159\u00e1dku. U NOR pam\u011bti je ka\u017ed\u00fd tranzistor p\u0159\u00edmo p\u0159ipojen k bitov\u00e9mu \u0159\u00e1dku, zat\u00edmco u NAND pam\u011bti jsou tranzistory p\u0159ipojeny s\u00e9riov\u011b.<\/p>\n<p><img decoding=\"async\" alt=\"\u00davod do SSD. \u010c\u00e1st 4. Fyzick\u00e1\" src=\"\/wp-content\/uploads\/2020\/03\/14db892a94f6bf36fe3f9dc8f5ad76c3.png\" style=\"display:block;margin: 0 auto;\" \/><br \/>\n\u010cten\u00ed z pam\u011bti takov\u00e9 konfigurace je slo\u017eit\u011bj\u0161\u00ed: na pot\u0159ebnou \u0159\u00e1dku slova se dod\u00e1v\u00e1 nap\u011bt\u00ed pot\u0159ebn\u00e9 pro \u010dten\u00ed, zat\u00edmco na v\u0161echny ostatn\u00ed \u0159\u00e1dky slova se dod\u00e1v\u00e1 nap\u011bt\u00ed, kter\u00e9 otev\u0159e tranzistor bez ohledu na \u00farove\u0148 n\u00e1boje v n\u011bm. Jeliko\u017e jsou v\u0161echny ostatn\u00ed tranzistory zaru\u010den\u011b otev\u0159en\u00e9, existence nap\u011bt\u00ed na bitov\u00e9 lince z\u00e1vis\u00ed pouze na jedin\u00e9m tranzistoru, na kter\u00fd bylo dod\u00e1no nap\u011bt\u00ed pro \u010dten\u00ed.<\/p>\n<p>Vyn\u00e1lez flash pam\u011bti typu NAND umo\u017e\u0148uje v\u00fdznamn\u00e9 zhu\u0161\u0165ov\u00e1n\u00ed sch\u00e9matu, umis\u0165ov\u00e1n\u00edm v\u011bt\u0161\u00edho objemu pam\u011bti ve stejn\u00fdch rozm\u011brech. A\u017e do roku 2007 se objem pam\u011bti zvy\u0161oval zmen\u0161ov\u00e1n\u00edm v\u00fdrobn\u00edho technologick\u00e9ho procesu \u010dipu.<\/p>\n<p>V roce 2007 spole\u010dnost Toshiba p\u0159edstavila novou verzi NAND pam\u011bti: <b>Vertical NAND (V-NAND)<\/b>, tak\u00e9 zn\u00e1mou jako <b>3D NAND<\/b>. V t\u00e9to technologii se klade d\u016fraz na um\u00edst\u011bn\u00ed tranzistor\u016f do n\u011bkolika vrstev, co\u017e op\u011bt umo\u017e\u0148uje zhu\u0161t\u011bn\u00ed sch\u00e9matu a zv\u00fd\u0161en\u00ed objemu pam\u011bti. Nicm\u00e9n\u011b, zhu\u0161t\u011bn\u00ed sch\u00e9matu nem\u016f\u017ee b\u00fdt opakov\u00e1no do nekone\u010dna, a proto byly prozkoum\u00e1ny dal\u0161\u00ed metody zvy\u0161ov\u00e1n\u00ed ulo\u017een\u00e9ho objemu pam\u011bti.<\/p>\n<p><img decoding=\"async\" alt=\"\u00davod do SSD. \u010c\u00e1st 4. Fyzick\u00e1\" src=\"\/wp-content\/uploads\/2020\/03\/11bbf1b13a91ae464c305fac941218ec.png\" style=\"display:block;margin: 0 auto;\" \/><br \/>\nP\u016fvodn\u011b ka\u017ed\u00fd tranzistor ukl\u00e1dal dv\u011b \u00farovn\u011b n\u00e1boje: logickou nulu a logickou jedni\u010dku. Tento p\u0159\u00edstup se naz\u00fdv\u00e1 <b>Single-Level Cell (SLC)<\/b>. Disky s touto technologi\u00ed se vyzna\u010duj\u00ed vysokou spolehlivost\u00ed a maxim\u00e1ln\u00edm po\u010dtem cykl\u016f p\u0159episov\u00e1n\u00ed.<\/p>\n<p>V pr\u016fb\u011bhu \u010dasu bylo p\u0159ijato rozhodnut\u00ed zv\u00fd\u0161it objem disk\u016f na \u00fakor odolnosti. Tak se mno\u017estv\u00ed \u00farovn\u00ed n\u00e1boje v bu\u0148ce zv\u00fd\u0161ilo na \u010dty\u0159i, a tuto technologii nazvali <b>Multi-Level Cell (MLC)<\/b>. N\u00e1sledn\u011b se objevily <b>Triple-Level Cell (TLC)<\/b> a <b>Quad-Level Cell (QLC)<\/b>. V budoucnosti se objev\u00ed nov\u00e1 \u00farove\u0148 \u2014 <b>Penta-Level Cell (PLC)<\/b> s p\u011bti bity v jedn\u00e9 bu\u0148ce. \u010c\u00edm v\u00edce bit\u016f je um\u00edst\u011bno do jedn\u00e9 bu\u0148ky, t\u00edm v\u011bt\u0161\u00ed je objem disku p\u0159i stejn\u00e9 cen\u011b, ale men\u0161\u00ed odolnost.<\/p>\n<p>Zhu\u0161t\u011bn\u00ed sch\u00e9matu zmen\u0161ov\u00e1n\u00edm technologick\u00e9ho procesu a zvy\u0161ov\u00e1n\u00edm po\u010dtu bit\u016f v jednom tranzistoru m\u00e1 negativn\u00ed dopad na uchov\u00e1van\u00e1 data. A\u010dkoli EPROM a EEPROM pou\u017e\u00edvaj\u00ed stejn\u00e9 tranzistory, EPROM a EEPROM dok\u00e1\u017eou uchov\u00e1vat data bez nap\u00e1jen\u00ed deset let, zat\u00edmco modern\u00ed flash pam\u011b\u0165 m\u016f\u017ee v\u0161echno \"zapomenout\" ji\u017e po roce.<\/p>\n<blockquote><p>Pou\u017eit\u00ed flash pam\u011bti v kosmick\u00e9m pr\u016fmyslu je problematick\u00e9, proto\u017ee radiace negativn\u011b ovliv\u0148uje elektrony v plovouc\u00edch z\u00e1tk\u00e1ch.<\/p><\/blockquote>\n<p>Uveden\u00e9 probl\u00e9my br\u00e1n\u00ed flash pam\u011bti st\u00e1t se neochv\u011bjn\u00fdm l\u00eddrem v oblasti ukl\u00e1d\u00e1n\u00ed informac\u00ed. I kdy\u017e jsou flash pam\u011b\u0165ov\u00e9 jednotky \u0161iroce roz\u0161\u00ed\u0159en\u00e9, prob\u00edhaj\u00ed v\u00fdzkumy jin\u00fdch typ\u016f pam\u011bt\u00ed, kter\u00e9 nemaj\u00ed tyto nev\u00fdhody, mezi nimi\u017e je ukl\u00e1d\u00e1n\u00ed informac\u00ed pomoc\u00ed magnetick\u00fdch moment\u016f a f\u00e1zov\u00fdch stav\u016f.<\/p>\n<h2>Magnetorezistivn\u00ed pam\u011b\u0165<\/h2>\n<p>\n<noindex><a rel=\"nofollow\" href=\"https:\/\/www.youtube.com\/watch?v=lne8r2mIwuA\"><img decoding=\"async\" alt=\"\u00davod do SSD. \u010c\u00e1st 4. Fyzick\u00e1\" src=\"\/wp-content\/uploads\/2020\/03\/12ad7d4ed598506d78199c56e91a3831.png\" style=\"display:block;margin: 0 auto;\" \/><\/a><\/noindex><br \/>\nK\u00f3dov\u00e1n\u00ed informac\u00ed pomoc\u00ed magnetick\u00fdch moment\u016f vzniklo v roce 1955 ve form\u011b pam\u011bti na magnetick\u00fdch j\u00e1drech. A\u017e do poloviny 70. let byla ferritov\u00e1 pam\u011b\u0165 hlavn\u00edm typem pam\u011bti. P\u0159i \u010dten\u00ed bitu z tohoto typu pam\u011bti do\u0161lo k demagnetizaci krou\u017eku a ztr\u00e1t\u011b informac\u00ed. Tak\u017ee po p\u0159e\u010dten\u00ed bitu bylo nutn\u00e9 jej znovu zapsat.<\/p>\n<p>V modern\u00edch v\u00fdvoj\u00edch magnetorezistivn\u00ed pam\u011bti se m\u00edsto krou\u017ek\u016f pou\u017e\u00edvaj\u00ed dv\u011b vrstvy ferromagnetika, odd\u011blen\u00e9 dielektrikem. Jedna vrstva je permanentn\u00ed magnet a druh\u00e1 m\u011bn\u00ed sm\u011br magnetizace. \u010cten\u00ed bitu z takov\u00e9 bu\u0148ky spo\u010d\u00edv\u00e1 v m\u011b\u0159en\u00ed odporu p\u0159i pr\u016fchodu proudu: pokud jsou vrstvy magnetizov\u00e1ny opa\u010dn\u00fdm sm\u011brem, odpor je v\u011bt\u0161\u00ed a to odpov\u00edd\u00e1 hodnot\u011b \u201e1\u201c.<\/p>\n<p>Ferritov\u00e1 pam\u011b\u0165 nevy\u017eaduje trval\u00fd zdroj nap\u00e1jen\u00ed k udr\u017een\u00ed zapsan\u00fdch informac\u00ed, nicm\u00e9n\u011b magnetick\u00e9 pole bu\u0148ky m\u016f\u017ee ovlivnit \u201esousedn\u00ed\u201c bu\u0148ku, co\u017e ukl\u00e1d\u00e1 omezen\u00ed na hustotu sch\u00e9matu.<\/p>\n<blockquote><p>Podle <noindex><a rel=\"nofollow\" href=\"https:\/\/www.jedec.org\/sites\/default\/files\/Alvin_Cox%20%5BCompatibility%20Mode%5D_0.pdf\">JEDEC<\/a><\/noindex> SSD disky zalo\u017een\u00e9 na flash pam\u011bti by m\u011bly uchov\u00e1vat informace alespo\u0148 t\u0159i m\u011bs\u00edce p\u0159i okoln\u00ed teplot\u011b 40 \u00b0C. Vyvinut\u00fd Intel <noindex><a rel=\"nofollow\" href=\"https:\/\/3dnews.ru\/983125\">\u010dip na b\u00e1zi magnetorezistivn\u00ed pam\u011bti<\/a><\/noindex> slibuje uchovat data po dobu deseti let p\u0159i teplot\u011b 200 \u00b0C.<\/p><\/blockquote>\n<p>Navzdory slo\u017eitosti v\u00fdvoje se magnetorezistivn\u00ed pam\u011b\u0165 b\u011bhem pou\u017e\u00edv\u00e1n\u00ed nedegeneruje a m\u00e1 lep\u0161\u00ed v\u00fdkon ne\u017e ostatn\u00ed typy pam\u011bt\u00ed, co\u017e neumo\u017e\u0148uje tuto formu pam\u011bti odepsat.<\/p>\n<h2>Pam\u011b\u0165 s f\u00e1zovou zm\u011bnou<\/h2>\n<p>\nT\u0159et\u00ed perspektivn\u00ed typ pam\u011bti \u2014 pam\u011b\u0165 na b\u00e1zi f\u00e1zov\u00e9ho p\u0159echodu. Tento typ pam\u011bti vyu\u017e\u00edv\u00e1 vlastnosti chalcogenid\u016f p\u0159ep\u00ednat mezi krystalick\u00fdm a amorfn\u00edm stavem p\u0159i zah\u0159\u00edv\u00e1n\u00ed.<\/p>\n<blockquote><p><b>Chalcogenidy<\/b> \u2014 bin\u00e1rn\u00ed spojen\u00ed kov\u016f se skupinou 16 (6. skupina hlavn\u00ed podskupiny) periodick\u00e9 tabulky Mendelejeva. Nap\u0159\u00edklad v CD-RW, DVD-RW, DVD-RAM a Blu-ray disc\u00edch se pou\u017e\u00edvaj\u00ed tellurid germ\u00e1nia (GeTe) a tellurid antimonu (III) (Sb2Te3).<\/p><\/blockquote>\n<p>Studie o vyu\u017eit\u00ed f\u00e1zov\u00e9ho p\u0159echodu pro ukl\u00e1d\u00e1n\u00ed informac\u00ed byly prov\u00e1d\u011bny v <b>60. letech<\/b> 20. stolet\u00ed Stanem Ovshinsk\u00fdm, ale tehdy se technologi\u00edm neusnadnilo dostat se na trh. V 2000. letech se z\u00e1jem o tuto technologii znovu objevil, Samsung patentoval technologii umo\u017e\u0148uj\u00edc\u00ed p\u0159ep\u00edn\u00e1n\u00ed bitu za 5 ns a Intel a STMicroelectronics zv\u00fd\u0161ily po\u010det stav\u016f na \u010dty\u0159i, \u010d\u00edm\u017e dvakr\u00e1t zv\u00fd\u0161ily mo\u017en\u00fd objem.<\/p>\n<p>P\u0159i zah\u0159\u00e1t\u00ed nad bod t\u00e1n\u00ed chalcogenid ztr\u00e1c\u00ed krystalickou strukturu a po vychladnut\u00ed se m\u011bn\u00ed na amorfn\u00ed formu, kter\u00e1 se charakterizuje vysok\u00fdm elektrick\u00fdm odporem. Naopak p\u0159i zah\u0159\u00edv\u00e1n\u00ed na teplotu vy\u0161\u0161\u00ed ne\u017e bod krystalizace, ale ni\u017e\u0161\u00ed ne\u017e bod t\u00e1n\u00ed se chalcogenid vrac\u00ed do krystalick\u00e9ho stavu s n\u00edzkou \u00farovn\u00ed odporu.<\/p>\n<p>Pam\u011b\u0165 s f\u00e1zov\u00fdm p\u0159echodem nevy\u017eaduje \u201edob\u00edjen\u00ed\u201c b\u011bhem \u010dasu a nen\u00ed citliv\u00e1 na radiaci, na rozd\u00edl od pam\u011bti na elektrick\u00fdch n\u00e1boj\u00edch. Tento typ pam\u011bti m\u016f\u017ee uchov\u00e1vat informace po dobu 300 let p\u0159i teplot\u011b 85 \u00b0C.<\/p>\n<p>P\u0159edpokl\u00e1d\u00e1 se, \u017ee v\u00fdvoj spole\u010dnosti Intel, technologie <b>3D Crosspoint (3D XPoint)<\/b> pou\u017e\u00edv\u00e1 pr\u00e1v\u011b f\u00e1zov\u00e9 p\u0159echody pro ukl\u00e1d\u00e1n\u00ed informac\u00ed. 3D XPoint se pou\u017e\u00edv\u00e1 v \u00falo\u017ei\u0161t\u00edch Intel&reg; Optane&trade; Memory, kter\u00e9 maj\u00ed deklarovanou vysokou odolnost v\u016f\u010di opot\u0159eben\u00ed.<\/p>\n<h2>Z\u00e1v\u011br<\/h2>\n<p>\nFyzick\u00e9 za\u0159\u00edzen\u00ed pevn\u00fdch disk\u016f pro\u0161lo mnoha zm\u011bnami za v\u00edce ne\u017e p\u016fl stolet\u00ed existence, nicm\u00e9n\u011b ka\u017ed\u00e9 z \u0159e\u0161en\u00ed m\u00e1 sv\u00e9 nev\u00fdhody. Navzdory nesporn\u00e9 popularit\u011b pam\u011bti Flash n\u011bkolik spole\u010dnost\u00ed v\u010detn\u011b Samsungu a Intelu zkoum\u00e1 mo\u017enosti vytvo\u0159en\u00ed pam\u011bti na magnetick\u00fdch momentech.<\/p>\n<p>Sn\u00ed\u017een\u00ed opot\u0159eben\u00ed bun\u011bk, jejich zhu\u0161t\u011bn\u00ed a zv\u00fd\u0161en\u00ed celkov\u00e9 kapacity \u00falo\u017ei\u0161t\u011b \u2014 to jsou sm\u011bry, kter\u00e9 jsou v sou\u010dasnosti perspektivn\u00ed pro dal\u0161\u00ed rozvoj pevn\u00fdch disk\u016f.<\/p>\n<blockquote><p>Nejmodern\u011bj\u0161\u00ed NAND a 3D XPoint disky si m\u016f\u017eete ji\u017e nyn\u00ed vyzkou\u0161et v na\u0161\u00ed <noindex><a rel=\"nofollow\" href=\"http:\/\/slc.tl\/S-MoX\">Selectel LAB<\/a><\/noindex>.<\/p><\/blockquote>\n<p>Jak si mysl\u00edte, \u017ee technologie ukl\u00e1d\u00e1n\u00ed informac\u00ed na elektrick\u00fdch n\u00e1boj\u00edch nahrad\u00ed jin\u00e9, nap\u0159\u00edklad k\u0159emenn\u00e9 disky nebo optickou pam\u011b\u0165 na nanokrystalech soli?<br \/>\n<br \/>Zdroj: <a content=\"nofollow\" rel=\"nofollow\" href=\"https:\/\/habr.com\/ru\/company\/selectel\/blog\/491264\/\">habr.com<\/a> <\/p>","protected":false,"gt_translate_keys":[{"key":"rendered","format":"html"}]},"excerpt":{"rendered":"<p>\u041f\u0440\u043e\u0448\u043b\u044b\u0435 \u0447\u0430\u0441\u0442\u0438 \u0446\u0438\u043a\u043b\u0430 \u00ab\u0412\u0432\u0435\u0434\u0435\u043d\u0438\u0435 \u0432 SSD\u00bb \u043f\u043e\u0432\u0435\u0434\u0430\u043b\u0438 \u0447\u0438\u0442\u0430\u0442\u0435\u043b\u044e \u043f\u0440\u043e \u0438\u0441\u0442\u043e\u0440\u0438\u044e \u043f\u043e\u044f\u0432\u043b\u0435\u043d\u0438\u044f SSD-\u043d\u0430\u043a\u043e\u043f\u0438\u0442\u0435\u043b\u0435\u0439, \u0438\u043d\u0442\u0435\u0440\u0444\u0435\u0439\u0441\u044b \u0432\u0437\u0430\u0438\u043c\u043e\u0434\u0435\u0439\u0441\u0442\u0432\u0438\u044f \u0441 \u043d\u0438\u043c\u0438 \u0438 \u043f\u043e\u043f\u0443\u043b\u044f\u0440\u043d\u044b\u0435 \u0444\u043e\u0440\u043c-\u0444\u0430\u043a\u0442\u043e\u0440\u044b. \u0427\u0435\u0442\u0432\u0451\u0440\u0442\u0430\u044f \u0447\u0430\u0441\u0442\u044c \u0440\u0430\u0441\u0441\u043a\u0430\u0436\u0435\u0442 \u043e \u0445\u0440\u0430\u043d\u0435\u043d\u0438\u0438 \u0434\u0430\u043d\u043d\u044b\u0445 \u0432\u043d\u0443\u0442\u0440\u0438 \u043d\u0430\u043a\u043e\u043f\u0438\u0442\u0435\u043b\u0435\u0439. \u0412 \u043f\u0440\u0435\u0434\u044b\u0434\u0443\u0449\u0438\u0445 \u0441\u0442\u0430\u0442\u044c\u044f\u0445 \u0446\u0438\u043a\u043b\u0430: \u0418\u0441\u0442\u043e\u0440\u0438\u044f \u0441\u043e\u0437\u0434\u0430\u043d\u0438\u044f HDD \u0438 SSD \u0412\u043e\u0437\u043d\u0438\u043a\u043d\u043e\u0432\u0435\u043d\u0438\u0435 \u0438\u043d\u0442\u0435\u0440\u0444\u0435\u0439\u0441\u043e\u0432 \u043d\u0430\u043a\u043e\u043f\u0438\u0442\u0435\u043b\u0435\u0439 \u041e\u0441\u043e\u0431\u0435\u043d\u043d\u043e\u0441\u0442\u0438 \u0444\u043e\u0440\u043c-\u0444\u0430\u043a\u0442\u043e\u0440\u043e\u0432 \u0425\u0440\u0430\u043d\u0435\u043d\u0438\u0435 \u0434\u0430\u043d\u043d\u044b\u0445 \u0432 \u0442\u0432\u0435\u0440\u0434\u043e\u0442\u0435\u043b\u044c\u043d\u044b\u0445 \u043d\u0430\u043a\u043e\u043f\u0438\u0442\u0435\u043b\u044f\u0445 \u043c\u043e\u0436\u043d\u043e \u0440\u0430\u0437\u0434\u0435\u043b\u0438\u0442\u044c \u043d\u0430 \u0434\u0432\u0435 \u043b\u043e\u0433\u0438\u0447\u0435\u0441\u043a\u0438\u0435 \u0447\u0430\u0441\u0442\u0438: \u0445\u0440\u0430\u043d\u0435\u043d\u0438\u0435 \u0438\u043d\u0444\u043e\u0440\u043c\u0430\u0446\u0438\u0438 \u0432 [&hellip;]<\/p>\n","protected":false,"gt_translate_keys":[{"key":"rendered","format":"html"}]},"author":1,"featured_media":73398,"comment_status":"open","ping_status":"open","sticky":false,"template":"","format":"standard","meta":{"footnotes":""},"categories":[688],"tags":[],"class_list":["post-73397","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-administrirovanie"],"aioseo_notices":[],"aioseo_head":"\n\t\t<!-- All in One SEO 5.0.3 - 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