{"id":74300,"date":"2020-03-16T08:42:04","date_gmt":"2020-03-16T05:42:04","guid":{"rendered":"https:\/\/prohoster.info\/blog\/novosti-interneta\/everspin-i-globalfoundries-prodlili-soglashenie-o-sovmestnoj-razrabotke-mram-do-12-nm-tehproczessa"},"modified":"2020-03-16T08:42:04","modified_gmt":"2020-03-16T05:42:04","slug":"everspin-i-globalfoundries-prodlili-soglashenie-o-sovmestnoj-razrabotke-mram-do-12-nm-tehproczessa","status":"publish","type":"post","link":"https:\/\/prohoster.info\/cs\/blog\/news\/everspin-i-globalfoundries-prodlili-soglashenie-o-sovmestnoj-razrabotke-mram-do-12-nm-tehproczessa","title":{"rendered":"Everspin a GlobalFoundries prodlou\u017eily dohodu o spole\u010dn\u00e9m v\u00fdvoji MRAM a\u017e do 12nm v\u00fdrobn\u00edho procesu.","gt_translate_keys":[{"key":"rendered","format":"text"}]},"content":{"rendered":"

Jedin\u00fd sv\u011btov\u00fd v\u00fdrobce diskr\u00e9tn\u00edch obvod\u016f magnetorezistivn\u00ed pam\u011bti MRAM, spole\u010dnost Everspin Technologies, pokra\u010duje ve zdokonalov\u00e1n\u00ed v\u00fdrobn\u00edch technologi\u00ed. Dnes se Everspin a spole\u010dnost GlobalFoundries domluvily<\/a><\/noindex> spole\u010dn\u011b vyvinout technologii v\u00fdroby \u010dip\u016f STT-MRAM s normami 12 nm a tranzistory FinFET.<\/p>\n

\"Everspin<\/p>\n

Na kont\u011b spole\u010dnosti Everspin je v\u00edce ne\u017e 650 patent\u016f a p\u0159ihl\u00e1\u0161ek t\u00fdkaj\u00edc\u00edch se pam\u011bti MRAM. Tato pam\u011b\u0165 zapisuje do bu\u0148ky podobn\u011b jako z\u00e1pis informac\u00ed na magnetickou desku pevn\u00e9ho disku. Pouze v p\u0159\u00edpad\u011b \u010dip\u016f m\u00e1 ka\u017ed\u00e1 bu\u0148ka svou (podm\u00edn\u011bn\u011b) magnetickou hlavu. Nov\u011bj\u0161\u00ed pam\u011b\u0165 STT-MRAM na z\u00e1klad\u011b efektu p\u0159enosu spinov\u00e9ho momentu elektronu pracuje s je\u0161t\u011b men\u0161\u00edmi energetick\u00fdmi n\u00e1klady, nebo\u0165 se prov\u00e1d\u00ed s pou\u017eit\u00edm ni\u017e\u0161\u00edch proud\u016f p\u0159i z\u00e1pisu a \u010dten\u00ed.<\/p>\n

P\u016fvodn\u011b pam\u011b\u0165 MRAM vyr\u00e1b\u011bla na objedn\u00e1vku Everspin spole\u010dnost NXP ve sv\u00e9m z\u00e1vod\u011b v USA. V roce 2014 uzav\u0159ela Everspin dohodu o spolupr\u00e1ci se spole\u010dnost\u00ed GlobalFoundries. Spole\u010dn\u011b za\u010dali vyv\u00edjet technologick\u00e9 procesy v\u00fdroby diskr\u00e9tn\u00ed a zabudovan\u00e9 MRAM (STT-MRAM) s vyu\u017eit\u00edm pokro\u010dilej\u0161\u00edch v\u00fdrobn\u00edch proces\u016f.<\/p>\n

Postupem \u010dasu byla na z\u00e1vodech GlobalFoundries zah\u00e1jena v\u00fdroba 40nm a 28nm \u010dip\u016f STT-MRAM (dokon\u010duj\u00edc\u00ed novinkou \u2013 1Gb diskr\u00e9tn\u00ed \u010dip STT-MRAM), a byl p\u0159ipraven technologick\u00fd proces 22FDX pro integraci pol\u00ed STT-MRAM do \u0159adi\u010d\u016f s vyu\u017eit\u00edm 22nm procesu na wafery FD-SOI. Nov\u00e1 dohoda mezi Everspin a GlobalFoundries povede k p\u0159enosu v\u00fdroby \u010dip\u016f STT-MRAM na 12nm technologii.<\/p>\n

<\/center>
\n\"Everspin<\/p>\n

Pam\u011b\u0165 MRAM svou rychlost\u00ed p\u0159ibl\u00ed\u017eila SRAM a potenci\u00e1ln\u011b ji m\u016f\u017ee nahradit v \u0159adi\u010d\u00edch pro Internet v\u011bc\u00ed. Je p\u0159itom energeticky nez\u00e1visl\u00e1 a mnohem odoln\u011bj\u0161\u00ed proti opot\u0159eben\u00ed ne\u017e b\u011b\u017en\u00e1 NAND pam\u011b\u0165. P\u0159echod na normy 12 nm umo\u017en\u00ed zv\u00fd\u0161en\u00ed hustoty z\u00e1pisu MRAM, co\u017e je jej\u00ed hlavn\u00ed nev\u00fdhoda.<\/p>\n

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Zdroj: 3dnews.ru<\/a> <\/p>","protected":false,"gt_translate_keys":[{"key":"rendered","format":"html"}]},"excerpt":{"rendered":"

\u0415\u0434\u0438\u043d\u0441\u0442\u0432\u0435\u043d\u043d\u044b\u0439 \u0432 \u043c\u0438\u0440\u0435 \u0440\u0430\u0437\u0440\u0430\u0431\u043e\u0442\u0447\u0438\u043a \u0434\u0438\u0441\u043a\u0440\u0435\u0442\u043d\u044b\u0445 \u043c\u0438\u043a\u0440\u043e\u0441\u0445\u0435\u043c \u043c\u0430\u0433\u043d\u0438\u0442\u043e\u0440\u0435\u0437\u0438\u0441\u0442\u0438\u0432\u043d\u043e\u0439 \u043f\u0430\u043c\u044f\u0442\u0438 MRAM \u043a\u043e\u043c\u043f\u0430\u043d\u0438\u044f Everspin Technologies \u043f\u0440\u043e\u0434\u043e\u043b\u0436\u0430\u0435\u0442 \u0441\u043e\u0432\u0435\u0440\u0448\u0435\u043d\u0441\u0442\u0432\u043e\u0432\u0430\u0442\u044c \u0442\u0435\u0445\u043d\u043e\u043b\u043e\u0433\u0438\u0438 \u043f\u0440\u043e\u0438\u0437\u0432\u043e\u0434\u0441\u0442\u0432\u0430. \u0421\u0435\u0433\u043e\u0434\u043d\u044f Everspin \u0438 \u043a\u043e\u043c\u043f\u0430\u043d\u0438\u044f GlobalFoundries \u0434\u043e\u0433\u043e\u0432\u043e\u0440\u0438\u043b\u0438\u0441\u044c \u0432\u043c\u0435\u0441\u0442\u0435 \u0440\u0430\u0437\u0440\u0430\u0431\u043e\u0442\u0430\u0442\u044c \u0442\u0435\u0445\u043d\u043e\u043b\u043e\u0433\u0438\u044e \u0432\u044b\u043f\u0443\u0441\u043a\u0430 \u043c\u0438\u043a\u0440\u043e\u0441\u0445\u0435\u043c STT-MRAM \u0441 \u043d\u043e\u0440\u043c\u0430\u043c\u0438 12 \u043d\u043c \u0438 \u0442\u0440\u0430\u043d\u0437\u0438\u0441\u0442\u043e\u0440\u0430\u043c\u0438 FinFET. \u041d\u0430 \u0441\u0447\u0435\u0442\u0443 \u043a\u043e\u043c\u043f\u0430\u043d\u0438\u0438 Everspin \u0441\u0432\u044b\u0448\u0435 650 \u043f\u0430\u0442\u0435\u043d\u0442\u043e\u0432 \u0438 \u043f\u0440\u0438\u043b\u043e\u0436\u0435\u043d\u0438\u0439, \u0441\u0432\u044f\u0437\u0430\u043d\u043d\u044b\u0445 \u0441 \u043f\u0430\u043c\u044f\u0442\u044c\u044e MRAM. \u042d\u0442\u043e \u043f\u0430\u043c\u044f\u0442\u044c, \u0437\u0430\u043f\u0438\u0441\u044c \u0432 \u044f\u0447\u0435\u0439\u043a\u0443 \u043a\u043e\u0442\u043e\u0440\u043e\u0439 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