The French introduced the seven-level GAA transistor of tomorrow
It has long been no secret that with the 3nm process technology, transistors will move from vertical “fin” FinFET channels to horizontal nanopage channels completely surrounded by gates or GAA (gate-all-around). Today, the French institute CEA-Leti showed how FinFET transistor manufacturing processes can be used to produce multi-level GAA transistors. And maintaining the continuity of technical processes is a reliable basis for rapid transformation. For the VLSI Technology & Circuits Symposium […]