According to industry sources in Taiwan, referenced by the internet resource DigiTimes, the Chinese memory manufacturer ChangXin Memory Technologies (CXMT) is actively preparing its lines for mass production of LPDDR4 memory. ChangXin, also known as Innotron Memory, is reportedly developing its own DRAM production technology using 19nm process nodes.
For commercial release of memory at its first 300mm facility, ChangXin was expected to in the first half of 2019. Unfortunately, this has not yet happened. However, the launch of 8-gigabit DDR4 LPDDR4 chips will be accompanied by an expansion of capacity to 20,000 300mm silicon wafers per month. The maximum capacity at ChangXin's facility reaches 125,000 300mm wafers per month. But that is not the limit. The company reported that next year it will begin constructing a second plant for processing 300mm wafers with memory.
At the same time, this Chinese manufacturer may face problems of a different kind. Recall, the first Chinese company that intended to start mass production of DRAM memory — Fujian Jinhua — with a prohibition to purchase production equipment from American partners. In Taiwan, it is believed that ChangXin will encounter the same problems as Fujian. Moreover, it has hired qualified engineers from the former Taiwanese subsidiary of the Japanese Elpida, whose business was acquired by the American Micron. Analysts expect lawsuits against ChangXin from Micron and sanctions if there is no response from the Chinese side.
Simultaneously, ChangXin is developing a production process for memory with 17nm standards. Completion of the development is expected in 2021. It is likely that ChangXin's second plant will begin operations by producing DRAM chips with these standards. Unless, of course, they face insurmountable obstacles in the form of U.S. sanctions and Micron's interference.
Source: 3dnews.ru
