Everspin Technologies, the world's only developer of discrete MRAM magnetoresistive memory chips, continues to improve production technologies. Everspin and GlobalFoundries today together to develop technology for the production of STT-MRAM chips with 12 nm standards and FinFET transistors.
Everspin has over 650 patents and applications related to MRAM memory. This is memory, writing to a cell of which is similar to writing information to a magnetic plate of a hard disk. Only in the case of microcircuits, each cell has its own (conditionally) magnetic head. The STT-MRAM memory that replaced it, based on the effect of electron spin momentum transfer, works with even lower energy costs, since it uses lower currents in write and read modes.
Initially, MRAM memory for Everspin was produced by NXP at its factory in the USA. In 2014, Everspin entered into a collaboration agreement with GlobalFoundries. Together they began developing discrete and embedded MRAM (STT-MRAM) manufacturing processes using more advanced manufacturing processes.
Over time, production of 40-nm and 28-nm STT-MRAM chips was launched at the facilities of GlobalFoundries (ending with the novelty - 1-Gbit discrete STT-MRAM chip), and the 22FDX technical process was prepared for integrating STT-MRAM arrays into controllers using 22- nm of process technology on FD-SOI wafers. The new agreement between Everspin and GlobalFoundries will lead to the transfer of production of STT-MRAM chips to the 12nm process technology.
MRAM is approaching SRAM in terms of performance and could potentially replace it in IoT controllers. At the same time, it is non-volatile and much more resistant to wear and tear than conventional NAND memory. The transition to the 12-nm standard will increase the recording density of MRAM, and this is its main drawback.
Source: 3dnews.ru