US researchers a memory cell that records data by mechanical displacement of metal layers three atoms thick. Such a memory cell promises the highest recording density and requires a minimum of energy for its implementation.
The development was reported by a joint group of scientists from the SLAC laboratory at Stanford University, the University of California at Berkeley and Texas A&M University. Data published in the journal .
The scientists conducted a series of experiments with stacks of a 2D metal called tungsten ditelluride. The thickness of each layer of 2D metal in the stack was three atoms, which promises a very dense recording compared to silicon memory cells. Experiments have revealed that a small portion of the energy applied to the stack causes sliding (displacement) of each odd layer in the stack of layers. This happens so quickly that the discovery can lead to extremely high-capacity computer memory that can be stored without power (non-volatile).
Recording information (zero or one) occurs in the process of shifting the metal layer in the stack. Layer shift causes changes in the motion of electrons in the upper and lower layers of 2D metals with respect to the shifted layer. To read this information, scientists propose to use a quantum effect called . This is a magnetic flux born inside the material, which occurs when charged particles move inside the crystal lattice.
Judging by the description of the experiment, shear-layer memory in 2D metal stacks is a very, very distant prospect. But the prospect is very tempting, which promises to speed up the writing of data for long-term storage by 100 times. Along the way, you have to make a lot of experiments and find the best combination of materials.
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Source: 3dnews.ru