This week the Chinese company YMTC on the development of a record-breaking 128-layer 3D NAND flash memory. The Chinese will skip the production stage of 96-layer memory and at the end of the year they will immediately begin producing 128-layer memory. Thus, they will reach the level of industry leaders, which is equivalent to waving a red rag in front of a bull. And the “bulls” reacted as expected.
South Korean site ETNews today that Samsung has accelerated the development of 160-layer 3D NAND (or V-NAND, as the company calls multi-layer flash memory). Samsung calls it a “super gap” strategy, or playing ahead, which should help South Korean tech leaders stay ahead of the competition. Since Samsung's success lies at the heart of the South Korean economy, it is a matter of prosperity for the entire nation, so the company takes its work seriously.
Samsung introduced memory with 100+ layers in . We can assume that the company has been releasing conventionally 128-layer memory for the third quarter in a row (the exact number of layers remains unknown for certain). Next on the scene should be Samsung memory with 160 or even more layers. It will belong to the 7th generation of V-NAND memory. According to rumors, the company has made significant progress in its development. There is an opinion that Samsung will be the first to reach the 160-layer mark, as happened with all previous generations of 3D NAND memory.
Source: 3dnews.ru