Chinese manufacturer ChangXin Memory to launch 8Gb LPDDR4 chips later this year

According to industry sources in Taiwan, which refers Internet resource DigiTimes, the Chinese manufacturer of memory company ChangXin Memory Technologies (CXMT) is in full swing preparing lines for the mass production of LPDDR4 memory. ChangXin, also known as Innotron Memory, is said to have developed its own DRAM manufacturing process using 19nm process standards.

For the commercial release of memory at its first 300 mm facility, ChangXin was to to start in the first half of 2019. Alas, this has not yet happened. But the start of production of 8-Gb DDR4 LPDDR4 chips will be accompanied by capacity expansion to 20 300-nm silicon wafers per month. The maximum line capacity at ChangXin reaches 125 300 mm wafers per month. But this is also not the limit. The company said it will start building a second plant next year to process 300mm memory wafers.

At the same time, this Chinese manufacturer may face problems of a different kind. Recall that the first Chinese company that was going to start mass production of DRAM memory - Fujian Jinhua - was included in the sanctions list USA with a ban on purchasing production equipment from American partners. In Taiwan, they believe that ChangXin will face the same problems as Fujian. In addition, she recruited qualified engineers from the former Taiwanese subsidiary of the Japanese Elpida, whose business was absorbed by the American Micron. Analysts are waiting for lawsuits against ChangXin by Micron and sanctions in the absence of a reaction from the Chinese side.

In parallel, ChangXin is developing a process technology for the production of memory with 17 nm standards. Completion of development is expected in 2021. It is likely that ChangXin's second factory will begin work with the production of DRAM crystals with precisely these standards. Unless, of course, US sanctions and the machinations of Micron become an insurmountable obstacle in her way.

Source: 3dnews.ru