Chargers for gadgets on the verge of a revolution: the Chinese have learned how to make GaN transistors

Power semiconductors go up a notch. Instead of silicon, gallium nitride (GaN) comes into play. GaN inverters and power supplies operate at up to 99% efficiency, delivering the highest efficiency in power systems from power plants to storage and use of electricity. The leaders of the new market are companies from the USA, Europe and Japan. Now in this area entered first company from China.

Recently, the Chinese gadget manufacturer ROCK has released the first charger with support for fast charging on the “Chinese chip”. At the heart of a conventional, in general, solution is the Inno Science GaN power assembly of the InnoGaN series. The chip is made in the standard DFN 8×8 form factor for compact power supplies.

The 2W ROCK 1C65AGaN charger is smaller and more functional than the Apple 61W PD charger (comparison above in the photo). Chinese charging can simultaneously charge three devices via two USB Type-C and one USB Type-A interfaces. In the future, ROCK plans to release 100W and 120W fast charger versions on Chinese GaN assemblies. In addition to it, about 10 Chinese manufacturers of chargers and power supplies are cooperating with the manufacturer of power GaN-elements, Inno Science.

Research by Chinese companies and, in particular, by Inno Science in the field of GaN power components is designed to lead to China's independence from foreign suppliers of similar solutions. Inno Science has its own development center and laboratory for the full cycle of testing solutions. But more importantly, it has two production lines for producing GaN solutions on 200mm wafers. For the world and even for the Chinese market, this is a drop in the ocean. But you have to start somewhere.

Source: 3dnews.ru