{"id":74300,"date":"2020-03-16T08:42:04","date_gmt":"2020-03-16T05:42:04","guid":{"rendered":"https:\/\/prohoster.info\/blog\/novosti-interneta\/everspin-i-globalfoundries-prodlili-soglashenie-o-sovmestnoj-razrabotke-mram-do-12-nm-tehproczessa"},"modified":"2020-03-16T08:42:04","modified_gmt":"2020-03-16T05:42:04","slug":"everspin-i-globalfoundries-prodlili-soglashenie-o-sovmestnoj-razrabotke-mram-do-12-nm-tehproczessa","status":"publish","type":"post","link":"https:\/\/prohoster.info\/fr\/blog\/news\/everspin-i-globalfoundries-prodlili-soglashenie-o-sovmestnoj-razrabotke-mram-do-12-nm-tehproczessa","title":{"rendered":"Everspin et GlobalFoundries ont prolong\u00e9 leur accord de collaboration pour le d\u00e9veloppement de MRAM jusqu'au processus technologique de 12 nm","gt_translate_keys":[{"key":"rendered","format":"text"}]},"content":{"rendered":"

Le seul d\u00e9veloppeur au monde de circuits discrets de m\u00e9moire magn\u00e9tor\u00e9sistive MRAM, la soci\u00e9t\u00e9 Everspin Technologies, continue d'am\u00e9liorer les technologies de production. Aujourd'hui, Everspin et la soci\u00e9t\u00e9 GlobalFoundries ont convenu<\/a><\/noindex> de d\u00e9velopper conjointement la technologie de fabrication de puces STT-MRAM avec des normes de 12 nm et des transistors FinFET.<\/p>\n

\"Everspin<\/p>\n

La soci\u00e9t\u00e9 Everspin poss\u00e8de plus de 650 brevets et demandes li\u00e9s \u00e0 la m\u00e9moire MRAM. Cette m\u00e9moire, dont l'\u00e9criture dans la cellule ressemble \u00e0 l'enregistrement d'informations sur un disque dur \u00e0 plateau magn\u00e9tique, a des cellules o\u00f9 chacune a sa propre (conditionnellement) t\u00eate magn\u00e9tique. La m\u00e9moire STT-MRAM qui a suivi, bas\u00e9e sur l'effet de transfert de moment angulaire de l'\u00e9lectron, fonctionne avec des co\u00fbts \u00e9nerg\u00e9tiques encore plus faibles, car elle utilise des courants plus petits en modes d'\u00e9criture et de lecture.<\/p>\n

\u00c0 l'origine, la m\u00e9moire MRAM \u00e9tait produite par NXP \u00e0 la demande d'Everspin dans son usine aux \u00c9tats-Unis. En 2014, Everspin a conclu un accord de coop\u00e9ration avec GlobalFoundries. Ensemble, ils ont commenc\u00e9 \u00e0 d\u00e9velopper des processus technologiques pour la production de MRAM discrets et int\u00e9gr\u00e9s (STT-MRAM) utilisant des technologies plus avanc\u00e9es.<\/p>\n

Avec le temps, GlobalFoundries a \u00e9tabli la production de puces STT-MRAM de 40 nm et 28 nm (culminant avec la nouveaut\u00e9 d'une puce discr\u00e8te STT-MRAM de 1 Go), et a \u00e9galement pr\u00e9par\u00e9 un processus technologique 22FDX pour l'int\u00e9gration de matrices STT-MRAM dans des contr\u00f4leurs utilisant un processus 22 nm sur des plaques de FD-SOI. Le nouvel accord entre Everspin et GlobalFoundries entra\u00eenera le transfert de la production de puces STT-MRAM vers un processus technologique de 12 nm.<\/p>\n

<\/center>
\n\"Everspin<\/p>\n

La m\u00e9moire MRAM approche des performances de la m\u00e9moire SRAM et pourrait potentiellement la remplacer dans les contr\u00f4leurs pour l'Internet des objets. De plus, elle est non volatile et beaucoup plus r\u00e9sistante \u00e0 l'usure que la m\u00e9moire NAND ordinaire. Le passage aux normes de 12 nm permettra d'augmenter la densit\u00e9 d'enregistrement de la MRAM, qui est son principal inconv\u00e9nient.<\/p>\n

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Source : 3dnews.ru<\/a> <\/p>","protected":false,"gt_translate_keys":[{"key":"rendered","format":"html"}]},"excerpt":{"rendered":"

\u0415\u0434\u0438\u043d\u0441\u0442\u0432\u0435\u043d\u043d\u044b\u0439 \u0432 \u043c\u0438\u0440\u0435 \u0440\u0430\u0437\u0440\u0430\u0431\u043e\u0442\u0447\u0438\u043a \u0434\u0438\u0441\u043a\u0440\u0435\u0442\u043d\u044b\u0445 \u043c\u0438\u043a\u0440\u043e\u0441\u0445\u0435\u043c \u043c\u0430\u0433\u043d\u0438\u0442\u043e\u0440\u0435\u0437\u0438\u0441\u0442\u0438\u0432\u043d\u043e\u0439 \u043f\u0430\u043c\u044f\u0442\u0438 MRAM \u043a\u043e\u043c\u043f\u0430\u043d\u0438\u044f Everspin Technologies \u043f\u0440\u043e\u0434\u043e\u043b\u0436\u0430\u0435\u0442 \u0441\u043e\u0432\u0435\u0440\u0448\u0435\u043d\u0441\u0442\u0432\u043e\u0432\u0430\u0442\u044c \u0442\u0435\u0445\u043d\u043e\u043b\u043e\u0433\u0438\u0438 \u043f\u0440\u043e\u0438\u0437\u0432\u043e\u0434\u0441\u0442\u0432\u0430. \u0421\u0435\u0433\u043e\u0434\u043d\u044f Everspin \u0438 \u043a\u043e\u043c\u043f\u0430\u043d\u0438\u044f GlobalFoundries \u0434\u043e\u0433\u043e\u0432\u043e\u0440\u0438\u043b\u0438\u0441\u044c \u0432\u043c\u0435\u0441\u0442\u0435 \u0440\u0430\u0437\u0440\u0430\u0431\u043e\u0442\u0430\u0442\u044c \u0442\u0435\u0445\u043d\u043e\u043b\u043e\u0433\u0438\u044e \u0432\u044b\u043f\u0443\u0441\u043a\u0430 \u043c\u0438\u043a\u0440\u043e\u0441\u0445\u0435\u043c STT-MRAM \u0441 \u043d\u043e\u0440\u043c\u0430\u043c\u0438 12 \u043d\u043c \u0438 \u0442\u0440\u0430\u043d\u0437\u0438\u0441\u0442\u043e\u0440\u0430\u043c\u0438 FinFET. \u041d\u0430 \u0441\u0447\u0435\u0442\u0443 \u043a\u043e\u043c\u043f\u0430\u043d\u0438\u0438 Everspin \u0441\u0432\u044b\u0448\u0435 650 \u043f\u0430\u0442\u0435\u043d\u0442\u043e\u0432 \u0438 \u043f\u0440\u0438\u043b\u043e\u0436\u0435\u043d\u0438\u0439, \u0441\u0432\u044f\u0437\u0430\u043d\u043d\u044b\u0445 \u0441 \u043f\u0430\u043c\u044f\u0442\u044c\u044e MRAM. \u042d\u0442\u043e \u043f\u0430\u043c\u044f\u0442\u044c, \u0437\u0430\u043f\u0438\u0441\u044c \u0432 \u044f\u0447\u0435\u0439\u043a\u0443 \u043a\u043e\u0442\u043e\u0440\u043e\u0439 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