Dangane da gidan yanar gizon IEEE Spectrum, daga ƙarshen Fabrairu zuwa farkon Maris, an ƙirƙiri wani dakin gwaje-gwaje a cibiyar Belgian Imec tare da kamfanin Amurka KMLabs don nazarin matsaloli tare da photolithography na semiconductor a ƙarƙashin tasirin tasirin EUV (a cikin ultra- zafin ultraviolet). Zai yi kama, me akwai don yin karatu a nan? A'a, akwai batun da za a yi nazari, amma me yasa aka kafa sabon dakin gwaje-gwaje don wannan? Samsung ya fara samar da kwakwalwan kwamfuta na 7nm tare da yin amfani da wani bangare na na'urorin daukar hoto na EUV watanni shida da suka gabata. Nan ba da jimawa ba TSMC za ta shiga cikin wannan ƙoƙarin. A ƙarshen shekara, dukansu biyu za su fara samar da haɗari tare da ma'auni na 5 nm da sauransu. Kuma duk da haka akwai matsaloli, kuma suna da tsanani sosai cewa ya kamata a nemi amsoshin tambayoyin a cikin dakunan gwaje-gwaje, kuma ba a cikin samarwa ba.
Babban matsala a cikin lithography na EUV a yau ya kasance ingancin mai ɗaukar hoto. Tushen radiation na EUV shine plasma, ba laser ba, kamar yadda yake tare da tsofaffin 193nm scanners. Laser yana fitar da digo na gubar a cikin yanayin iska kuma sakamakon radiation yana fitar da photons, wanda makamashinsa ya ninka ƙarfin photons sau 14 a cikin na'urori masu amfani da hasken ultraviolet. A sakamakon haka, ba a halakar da photoresist ba kawai a wuraren da photons ke jefa bam ba, amma har ma da kurakurai bazuwar suna faruwa, ciki har da sakamakon abin da ake kira sakamako na ƙararrawa. Ƙarfin photons ya yi yawa. Gwaje-gwaje tare da na'urorin daukar hoto na EUV sun nuna cewa masu daukar hoto, waɗanda har yanzu suna da ikon yin aiki tare da ma'aunin nm 7, a cikin yanayin masana'anta na 5 nm suna nuna babban matakin lahani. Matsalar tana da tsanani sosai cewa masana da yawa ba su yi imani da saurin nasarar ƙaddamar da fasaha na 5 nm ba, ba tare da ambaton sauyawa zuwa 3 nm da ƙasa ba.
Matsalar ƙirƙirar sabon ƙarni na photoresist za a yi ƙoƙari a warware shi a cikin dakin gwaje-gwaje na haɗin gwiwa na Imec da KMLabs. Kuma za su warware shi daga mahangar tsarin kimiyya, ba ta hanyar zabar reagents ba, kamar yadda aka yi a cikin shekaru talatin da suka gabata. Don yin wannan, abokan hulɗar kimiyya za su ƙirƙira kayan aiki don cikakken nazarin tsarin jiki da sunadarai a cikin photoresisist. Yawanci, ana amfani da synchrotrons don nazarin matakai a matakin kwayoyin halitta, amma Imec da KMLabs suna shirin ƙirƙirar tsinkayar EUV da kayan aunawa dangane da infrared lasers. KMLabs kwararre ne a tsarin laser.
Dangane da shigarwar Laser na KMLabs, za a ƙirƙiri dandamali don samar da babban tsari na jituwa. Yawanci, don wannan dalili, ana tura bugun bugun laser mai ƙarfi zuwa cikin matsakaicin gas wanda babban mitar jituwa na bugun bugun jini ya taso. Tare da irin wannan juyi, babban hasara na iko yana faruwa, don haka irin wannan ka'ida ta haifar da radiation na EUV ba za a iya amfani da shi kai tsaye don lithography na semiconductor ba. Amma wannan ya isa ga gwaje-gwaje. Mafi mahimmanci, sakamakon radiation za a iya sarrafa shi duka ta hanyar tsawon lokaci na bugun jini daga picoseconds (10-12) zuwa attoseconds (10-18), da kuma ta tsawon tsayi daga 6,5 nm zuwa 47 nm. Waɗannan halaye ne masu kima don kayan aunawa. Za su taimaka wajen nazarin matakai na sauye-sauyen sauye-sauye na kwayoyin halitta a cikin photoresist, ionization tafiyar matakai da kuma fallasa ga photons masu ƙarfi. Ba tare da wannan ba, masana'antar photolithography tare da ma'auni kasa da 3 har ma da 5 nm ya kasance cikin tambaya.
source: 3dnews.ru