Mai haɓakawa ɗaya tilo a duniya na kwakwalwan ƙwaƙwalwar ajiya na MRAM magnetoresistive, Everspin Technologies, yana ci gaba da haɓaka fasahar samarwa. Yau Everspin da GlobalFoundries tare don haɓaka fasaha don samar da microcircuits STT-MRAM tare da ma'aunin nm 12 da FinFET transistor.
Everspin yana da haƙƙin mallaka sama da 650 da aikace-aikace masu alaƙa da ƙwaƙwalwar MRAM. Wannan ƙwaƙwalwar ajiya ce, rubuta zuwa tantanin halitta wanda yayi kama da rubuta bayanai zuwa farantin maganadisu na hard disk. A yanayin microcircuits ne kawai kowane tantanin halitta yana da nasa (yanayin) shugaban maganadisu. Ƙwaƙwalwar ajiyar STT-MRAM wacce ta maye gurbinsa, dangane da tasirin canja wuri na wutar lantarki, yana aiki tare da ƙananan farashin makamashi, tunda yana amfani da ƙananan igiyoyin ruwa a cikin rubutu da karantawa.
Da farko, NXP ne ya samar da ƙwaƙwalwar MRAM wanda Everspin ya umarta a shukarsa a Amurka. A cikin 2014, Everspin ya shiga yarjejeniyar aiki tare da GlobalFoundries. Tare, sun fara haɓaka hanyoyin ƙera MRAM (STT-MRAM) masu hankali da sakawa ta hanyar amfani da ingantattun hanyoyin masana'antu.
A tsawon lokaci, wuraren GlobalFoundries sun ƙaddamar da samar da kwakwalwan kwamfuta na 40-nm da 28-nm STT-MRAM (yana ƙarewa tare da sabon samfuri - guntu na 1-Gbit mai hankali STT-MRAM), kuma sun shirya fasahar aiwatar da 22FDX don haɗa STT- Tsarin MRAM cikin masu sarrafawa ta amfani da fasahar tsari na 22-nm nm akan wafers na FD-SOI. Sabuwar yarjejeniya tsakanin Everspin da GlobalFoundries za ta haifar da canja wurin samar da kwakwalwan kwamfuta na STT-MRAM zuwa fasahar tsari na 12-nm.
Ƙwaƙwalwar MRAM tana gabatowa aikin ƙwaƙwalwar SRAM kuma tana iya yuwuwar maye gurbin ta a cikin masu sarrafawa don Intanet na Abubuwa. A lokaci guda, ba shi da ƙarfi kuma yana da juriya don sawa fiye da ƙwaƙwalwar NAND na al'ada. Canji zuwa ma'auni na 12 nm zai ƙara yawan rikodi na MRAM, kuma wannan shine babban koma baya.
source: 3dnews.ru