Faransawa sun gabatar da transistor mai mataki bakwai GAA na gobe

Na dogon lokaci ba asiri ba, cewa daga fasahar tsari na 3nm, transistor zai motsa daga tashoshi na FinFET "fin" tsaye zuwa tashoshi na nanopage na kwance gaba daya kewaye da ƙofofi ko GAA (ƙofa-duk-around). A yau, Cibiyar Faransa ta CEA-Leti ta nuna yadda za a iya amfani da hanyoyin samar da transistor na FinFET don samar da transistor GAA masu yawa. Kuma kiyaye ci gaba da hanyoyin fasaha shine tushen abin dogara ga saurin canji.

Kwararrun CEA-Leti don Fasahar Fasaha & Da'ira 2020 na VLSI ya shirya rahoto game da samar da transistor-mataki bakwai GAA (godiya ta musamman ga cutar sankarau, godiya ga wanda takaddun gabatarwa a ƙarshe ya fara bayyana da sauri, kuma ba watanni bayan taro ba). Masu binciken Faransanci sun tabbatar da cewa za su iya samar da transistor GAA tare da tashoshi a cikin nau'i na "tari" na nanopages ta hanyar amfani da fasahar da ake amfani da su da yawa na tsarin da ake kira RMG (kofar karfe maye gurbin ko, a cikin Rashanci, maye gurbin (na wucin gadi) karfe. kofa). A wani lokaci, an daidaita tsarin fasaha na RMG don samar da finFET transistor kuma, kamar yadda muke gani, za a iya fadada shi zuwa samar da transistor GAA tare da tsari mai yawa na tashoshi na nanopage.

Samsung, kamar yadda muka sani, tare da fara samar da kwakwalwan kwamfuta na 3-nm, yana shirin samar da transistor GAA guda biyu tare da tashoshi masu lebur guda biyu (nanopages) wanda ke saman ɗayan, kewaye da kofa a kowane bangare. Kwararrun CEA-Leti sun nuna cewa yana yiwuwa a samar da transistor tare da tashoshi na nanopage guda bakwai kuma a lokaci guda saita tashoshi zuwa girman da ake buƙata. Misali, an fitar da transistor GAA na gwaji tare da tashoshi bakwai a nau'ikan da ke da faɗin 15 nm zuwa 85 nm. A bayyane yake cewa wannan yana ba ku damar saita madaidaicin halaye don transistor kuma tabbatar da maimaita su (rage yaduwar sigogi).

Dangane da Faransanci, ƙarin matakan tashoshi a cikin transistor GAA, mafi girman fa'ida mai tasiri na jimlar tashar kuma, don haka, mafi kyawun ikon sarrafa transistor. Hakanan, a cikin tsarin multilayer akwai ƙarancin ɗigogi na halin yanzu. Misali, transistor GAA mai matakin bakwai yana da raguwar zubewa sau uku fiye da na matakin biyu (dan kadan, kamar Samsung GAA). To, a ƙarshe masana'antar ta sami hanyar sama, tana nisa daga jeri a kwance na abubuwa akan guntu zuwa tsaye. Da alama microcircuits ba zai ƙara yawan yankin lu'ulu'u ba don ya zama ma sauri, mafi ƙarfi da ƙarfin kuzari.

source: 3dnews.ru