Kwanan nan, a wurin baje kolin bayanai na lantarki na kasar Sin karo na bakwai (CITE2019) a Shenzhen, an baje kolin tuki mai ƙarfi na farko na SSD P8260, wanda aka haɗa shi kaɗai daga abubuwan Sinanci, a tashar Tsinghua Unigroup. Wannan sabar-sabar SSD ce wacce aka kera mai sarrafa, DRAM buffer da 3D NAND array kuma aka kera su a China. To, kasar Sin ta dauki wani mataki, kuma tana sa ran bin wannan hanya don samun cikakken 'yancin kai daga abin da ake iya tunawa da kayayyakin da ake samarwa a kasashen waje.
Duk wanda ke bibiyar labarai game da ci gaba da samar da ƙwaƙwalwar ajiyar na'urar NAND na 3D a kasar Sin ya san cewa, samar da na'urorin ƙwaƙwalwar ajiya na flash ɗin na aiki ne ta hanyar haɗin gwiwa tare da Tsinghua, Fasahar Adana Ruwa ta Yangtze (YMTC). Abubuwan tuƙi na P8260 sun ƙunshi samfuran NAND na farko na 32-Layer 3Gb 64D na YMTC. A ƙarshen shekara, masana'anta za su fara samar da kwakwalwan kwamfuta na 128 Gbit 64-Layer 3D NAND, wanda zai ba YMTC damar zama na kasuwanci - yayin da samarwa ke cikin asara.
Ƙwaƙwalwar DRAM don buffer SSD an samar da shi ta hanyar Tsinghua Guoxin Micro. Ba a bayar da rahoton girman ma'ajin ba. Kamfanin Beijing Ziguang Storage Technology ne ya kera na'urar, wanda kuma ke da alaƙa da Tsinghua Unigroup.
Mai kula da P8260 da tuƙi suna goyan bayan yarjejeniya ta NVMe 1.2.1 da PCI Express 3.0 x4. An sanar da goyon bayan tashoshi na ƙwaƙwalwar ajiya na 16, wanda yayi alkawarin babban bandwidth, amma ainihin bayanai game da aikin P8260 kuma ba a ruwaito ba. Don yin aiki tare da buffer DRAM, mai sarrafawa yana da ginanniyar mai sarrafa tashoshi biyu tare da bas 40-bit da goyon bayan ECC. An gabatar da nau'ikan SSD P8260 guda biyu: tare da ƙarfin 1 da 2 TB a cikin nau'ikan nau'ikan katin PCIe da tuƙin U.2.
Baya ga faifan P8260, masana'anta sun kuma nuna SSDs na mabukaci na iyalai P100 da S100. Koyaya, kamfanin yana siyan ƙwaƙwalwar 3D NAND don waɗannan samfuran daga abokan tarayya. Ɗayan irin wannan abokin tarayya, alal misali, shine Intel.
source: 3dnews.ru