Samsung yana cin gajiyar fa'idar sa ta farko a cikin lithography na semiconductor ta amfani da na'urorin daukar hoto na EUV. Kamar yadda TSMC ke shirin fara amfani da na'urar daukar hotan takardu na nm 13,5 a watan Yuni, yana daidaita su don samar da kwakwalwan kwamfuta a cikin ƙarni na biyu na tsarin 7 nm, Samsung yana nutsewa da zurfi kuma.
Taimakawa kamfanin ya motsa da sauri daga bayar da fasahar tsari na 7nm tare da EUV don samar da mafita na 5nm kuma tare da EUV shine gaskiyar cewa Samsung ya kiyaye haɗin gwiwa tsakanin abubuwan ƙira (IP), kayan aikin ƙira, da kayan aikin dubawa. Daga cikin wasu abubuwa, wannan yana nufin cewa abokan ciniki na kamfanin za su adana kuɗi akan siyan kayan aikin ƙira, gwaji da shirye-shiryen IP blocks. PDKs don ƙira, dabara (DM, hanyoyin ƙira) da dandamalin ƙira na EDA masu sarrafa kansa sun kasance suna samuwa a matsayin wani ɓangare na haɓaka kwakwalwan kwamfuta don ma'aunin 7-nm na Samsung tare da EUV a cikin kwata na huɗu na bara. Duk waɗannan kayan aikin zasu tabbatar da haɓaka ayyukan dijital kuma don fasahar aiwatar da nm 5 tare da transistor FinFET.
Idan aka kwatanta da tsarin 7nm ta amfani da na'urorin daukar hoto na EUV, wanda kamfanin
Samsung yana samar da samfuran ta amfani da na'urorin daukar hoto na EUV a masana'antar S3 a Hwaseong. A cikin rabin na biyu na wannan shekara, kamfanin zai kammala gina wani sabon wuri kusa da Fab S3, wanda zai kasance a shirye don samar da kwakwalwan kwamfuta ta hanyar amfani da tsarin EUV a shekara mai zuwa.
source: 3dnews.ru