Yau Samsung Electronics game da tsare-tsare don haɓaka hanyoyin fasaha don samar da semiconductor. Kamfanin yana ɗaukar ƙirƙirar ayyukan dijital na kwakwalwan kwamfuta na gwaji na 3-nm dangane da haƙƙin mallaka na MBCFET a matsayin babban nasara a halin yanzu. Waɗannan su ne transistor tare da tashoshi na nanopage da yawa a kwance a cikin ƙofofin FET a tsaye (Multi-Bridge-Channel FET).
A matsayin wani ɓangare na ƙawance da IBM, Samsung ya ƙirƙira wata fasaha ta ɗan bambanta don samar da transistor tare da tashoshi gaba ɗaya kewaye da ƙofofin (GAA ko Ƙofar-All-Around). Ya kamata a sanya tashoshi na bakin ciki a cikin nau'in nanowires. Daga baya, Samsung ya ƙaura daga wannan makirci kuma ya ba da izinin tsarin transistor tare da tashoshi a cikin nau'i na nanopages. Wannan tsarin yana ba ku damar sarrafa halayen transistor ta hanyar sarrafa duka adadin shafuka (tashoshi) da kuma daidaita faɗin shafukan. Don fasahar FET na gargajiya, irin wannan motsin ba zai yiwu ba. Don ƙara ƙarfin FinFET transistor, dole ne a ninka adadin fins na FET akan ma'auni, kuma wannan yana buƙatar yanki. Ana iya canza halayen transistor MBCFET a cikin ƙofar jiki ɗaya, wanda don haka kuna buƙatar saita faɗin tashoshi da lambar su.
Samuwar ƙirar dijital (wanda aka buga) na guntu samfuri don samarwa ta amfani da tsarin GAA ya ba Samsung damar ƙayyade iyakokin iyawar transistor MBCFET. Ya kamata a la'akari da cewa wannan har yanzu bayanan ƙirar kwamfuta ne kuma sabon tsarin fasaha za a iya yanke hukunci a ƙarshe bayan an ƙaddamar da shi cikin samarwa da yawa. Duk da haka, akwai wurin farawa. Kamfanin ya ce sauye-sauye daga tsarin 7nm (ba shakka ƙarni na farko) zuwa tsarin GAA zai samar da raguwar kashi 45 cikin 50 na mutun da kuma rage 35% na amfani. Idan ba ku adana akan amfani ba, ana iya ƙara yawan aiki da kashi 3%. A baya can, Samsung ya ga tanadi da haɓakar haɓakawa yayin motsawa zuwa tsarin XNUMXnm rabu da waƙafi. Ya zama ko dai daya ne.
Kamfanin yana la'akari da shirye-shiryen dandamalin girgije na jama'a don masu haɓaka guntu masu zaman kansu da kamfanoni marasa fa'ida a matsayin muhimmin batu wajen haɓaka fasahar aiwatar da 3nm. Samsung bai ɓoye yanayin ci gaba, tabbatar da aikin da ɗakunan karatu akan sabar samarwa ba. Safe (Samsung Advanced Foundry Ecosystem Cloud) dandamali zai kasance ga masu zanen kaya a duk duniya. An ƙirƙiri dandamalin girgije SAFE tare da sa hannu na irin waɗannan manyan ayyukan girgije na jama'a kamar Amazon Web Services (AWS) da Microsoft Azure. Masu haɓaka tsarin ƙira daga Cadence da Synopsys sun ba da kayan aikin ƙirar su a cikin SAFE. Wannan yayi alƙawarin yin sauƙi da arha don ƙirƙirar sabbin hanyoyin magance hanyoyin Samsung.
Komawa zuwa fasahar sarrafa 3nm na Samsung, bari mu ƙara da cewa kamfanin ya gabatar da sigar farko na kunshin haɓaka guntu - 3nm GAE PDK Version 0.1. Tare da taimakonsa, zaku iya fara zayyana mafita na 3nm a yau, ko aƙalla shirya don saduwa da wannan tsarin Samsung lokacin da ya zama tartsatsi.
Samsung ya sanar da shirye-shiryensa na gaba kamar haka. A cikin rabin na biyu na wannan shekara, za a ƙaddamar da yawan samar da kwakwalwan kwamfuta ta amfani da tsarin 6nm. A lokaci guda, za a kammala ci gaban fasaha na 4nm. Za a kammala haɓaka samfuran Samsung na farko ta amfani da tsarin 5nm a wannan faɗuwar, tare da ƙaddamar da samarwa a farkon rabin shekara mai zuwa. Hakanan, a ƙarshen wannan shekara, Samsung zai kammala haɓaka fasahar aiwatarwa na 18FDS (18nm akan wafers na FD-SOI) da kwakwalwan kwamfuta 1-Gbit eMRAM. Fasahar aiwatarwa daga 7 nm zuwa 3 nm za su yi amfani da na'urorin daukar hoto na EUV tare da ƙara ƙarfi, yin ƙidayar kowane nanometer. Bugu da ƙari a kan hanyar ƙasa, kowane mataki za a ɗauka tare da fada.
source: 3dnews.ru