An haɓaka sabuwar fasaha don samar da nanometer semiconductor a Amurka

Ba shi yiwuwa a yi tunanin ƙarin ci gaban microelectronics ba tare da inganta fasahar samar da semiconductor ba. Don faɗaɗa iyakoki da koyon yadda ake samar da ƙananan abubuwa akan lu'ulu'u, ana buƙatar sabbin fasahohi da sabbin kayan aiki. Ɗaya daga cikin waɗannan fasahohin na iya zama ci gaba na ci gaban masana kimiyya na Amurka.

Tawagar masu bincike daga Laboratory National Argonne na Ma'aikatar Makamashi ta Amurka ya ci gaba sabuwar dabara don ƙirƙirar da etching bakin ciki fina-finai a saman lu'ulu'u. Wannan na iya yuwuwar haifar da samar da kwakwalwan kwamfuta a ƙaramin sikeli fiye da na yau da kuma nan gaba kaɗan. An buga binciken a cikin mujallar Chemistry of Materials.

Dabarar da aka tsara ta yi kama da tsarin gargajiya atomic Layer ajiya da etching, kawai maimakon inorganic fina-finai, da sabuwar fasahar halitta da kuma aiki tare da kwayoyin fina-finai. A haƙiƙa, ta hanyar kwatanci, ana kiran sabuwar fasahar da ake kira molecular Layer deposition (MLD, molecular Layer deposition) da etching molecular Layer etching (MLE, molecular Layer etching).

Kamar yadda yake a cikin etching Layer na atomic, hanyar MLE tana amfani da maganin iskar gas a cikin ɗaki na saman crystal tare da fina-finai na wani abu mai tushe. Ana kula da lu'ulu'u ta hanyar cyclically tare da iskar gas guda biyu daban-daban a madadin har sai fim ɗin ya zama bakin ciki zuwa wani kauri.

Hanyoyin sinadaran suna ƙarƙashin dokokin sarrafa kai. Wannan yana nufin cewa Layer bayan Layer an cire shi daidai kuma a cikin tsari mai sarrafawa. Idan kun yi amfani da hotunan hoto, za ku iya sake haifar da topology na guntu na gaba a kan guntu kuma ku tsara ƙirar tare da mafi girman daidaito.

A cikin gwajin, masana kimiyya sun yi amfani da iskar gas mai dauke da gishirin lithium da iskar da ke kan trimethylaluminum don etching kwayoyin halitta. A lokacin aikin etching, fili na lithium ya mayar da martani tare da saman fim ɗin alucone ta yadda aka ajiye lithium a saman kuma ya lalata haɗin sinadaran da ke cikin fim ɗin. Sa'an nan kuma an ba da trimethylaluminum, wanda ya cire Layer na fim din da lithium, da sauransu daya bayan daya har sai an rage fim din zuwa kauri da ake so. Kyakkyawan sarrafawa na tsari, masana kimiyya sunyi imani, na iya ba da damar fasahar da aka tsara don tura ci gaban samar da semiconductor.

source: 3dnews.ru