Samsung yayi magana game da transistor da zasu maye gurbin FinFET

Kamar yadda aka ruwaito sau da yawa, ana buƙatar yin wani abu tare da transistor ƙasa da 5 nm. A yau, masana'antun guntu suna samar da ingantattun mafita ta amfani da ƙofofin FinFET a tsaye. Har ila yau ana iya samar da transistor na FinFET ta amfani da hanyoyin fasaha na 5-nm da 4-nm (duk abin da waɗannan ka'idoji suke nufi), amma tuni a matakin samar da 3-nm semiconductor, Tsarin FinFET ya daina aiki kamar yadda ya kamata. Ƙofofin transistor sun yi ƙanƙanta sosai kuma ƙarfin wutar lantarki ba shi da ƙasa kaɗan don transistor ɗin su ci gaba da yin aikinsu a matsayin ƙofofin da ke cikin haɗaɗɗun da'irori. Saboda haka, masana'antu da, musamman, Samsung, farawa daga fasahar aiwatar da 3nm, za su canza zuwa samar da transistor tare da zobe ko gate na GAA (Gate-All-Around). Tare da sakin manema labarai na kwanan nan, Samsung kawai ya gabatar da bayanan gani game da tsarin sabbin transistor da fa'idodin amfani da su.

Samsung yayi magana game da transistor da zasu maye gurbin FinFET

Kamar yadda aka nuna a cikin hoton da ke sama, yayin da ka'idodin masana'antu ya ragu, ƙofofin sun samo asali ne daga tsarin tsare-tsare waɗanda za su iya sarrafa yanki ɗaya a ƙarƙashin ƙofar, zuwa tashoshi na tsaye da ke kewaye da ƙofar ta bangarori uku, kuma a ƙarshe suna matsawa kusa da tashoshi da aka kewaye da ƙofofi tare da ƙofofi. dukkan bangarorin hudu. Wannan hanyar gaba ɗaya ta kasance tare da haɓaka a cikin yankin ƙofar da ke kewaye da tashar sarrafawa, wanda ya ba da damar rage ƙarfin wutar lantarki zuwa transistor ba tare da lalata halaye na yanzu na transistor ba, saboda haka, yana haifar da haɓaka ayyukan transistor. da raguwar kwararar ruwa. Dangane da wannan, GAA transistor zai zama sabon kambi na halitta kuma ba zai buƙaci sake yin aiki mai mahimmanci na tsarin fasahar CMOS na gargajiya ba.

Samsung yayi magana game da transistor da zasu maye gurbin FinFET

Ana iya samar da tashoshin da ke kewaye da ƙofar ko dai a cikin nau'i na gadoji na bakin ciki (nanowires) ko a cikin nau'i na gadoji mai fadi ko nanopages. Samsung ya sanar da zabinsa don goyon bayan nanopages kuma ya yi iƙirarin kare ci gabansa tare da haƙƙin mallaka, kodayake ya haɓaka duk waɗannan sifofi yayin da yake shiga ƙawance tare da IBM da sauran kamfanoni, misali, tare da AMD. Samsung ba zai kira sabon transistors GAA ba, amma sunan mallakar mallakar MBCFET (Multi Bridge Channel FET). Shafukan tashoshi masu fadi za su ba da mahimmin igiyoyin ruwa, waɗanda ke da wahalar cimmawa a yanayin tashoshin nanowire.

Samsung yayi magana game da transistor da zasu maye gurbin FinFET

Juyawa zuwa ƙofofin ringi kuma zai inganta ingantaccen makamashi na sabbin tsarin transistor. Wannan yana nufin cewa za a iya rage ƙarfin wutar lantarki na transistor. Don tsarin FinFET, kamfanin yana kiran ƙimar rage ƙarfin yanayi 0,75 V. Canjin zuwa transistor MBCFET zai rage wannan iyaka har ma da ƙasa.

Samsung yayi magana game da transistor da zasu maye gurbin FinFET

Kamfanin ya kira fa'ida ta gaba ta MBCFET transistor m sassauƙa na mafita. Don haka, idan halayen FinFET transistor a matakin samarwa kawai za a iya sarrafa su da hankali, sanya takamaiman adadin gefuna a cikin aikin don kowane transistor, zayyana da'irori tare da transistor MBCFET zai yi kama da mafi kyawun kunnawa ga kowane aikin. Kuma wannan zai zama mai sauqi qwarai don yin: zai zama isa don zaɓar nisa da ake buƙata na tashoshin nanopage, kuma ana iya canza wannan siga ta layi.

Samsung yayi magana game da transistor da zasu maye gurbin FinFET

Don samar da transistor MBCFET, kamar yadda aka ambata a sama, fasahar aiwatar da CMOS na gargajiya da kayan aikin masana'antu da aka shigar a masana'antu sun dace ba tare da manyan canje-canje ba. Sai kawai matakin sarrafawa na wafers na siliki zai buƙaci ƙananan gyare-gyare, wanda aka fahimta, kuma shi ke nan. A ɓangaren ƙungiyoyin tuntuɓar da matakan ƙarfe, ba kwa buƙatar canza komai.

Samsung yayi magana game da transistor da zasu maye gurbin FinFET

A ƙarshe, Samsung a karon farko ya ba da kwatancen inganci na haɓakar da canjin canji zuwa fasahar sarrafa 3nm da transistor MBCFET za su kawo tare da shi (don fayyace, Samsung ba ya magana kai tsaye game da fasahar sarrafa 3nm, amma a baya ya ruwaito cewa. fasahar tsari na 4nm har yanzu za ta yi amfani da transistor FinFET). Don haka, idan aka kwatanta da fasahar tsari na 7nm FinFET, matsawa zuwa sabon al'ada kuma MBCFET zai samar da raguwar 50% na yawan amfani, karuwar 30% a cikin aiki da 45% raguwa a yankin guntu. Ba "ko dai, ko", amma gaba ɗaya. Yaushe hakan zai faru? Yana iya faruwa a ƙarshen 2021.


source: 3dnews.ru

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