Raws li peb paub, thaum Lub Peb Hlis Ntuj xyoo no, TSMC pib tsim cov khoom lag luam 5nm. Qhov no tshwm sim ntawm Fab 18 tsob nroj tshiab hauv Taiwan, rau kev tso tawm ntawm 5nm kev daws teeb meem. Kev tsim khoom loj siv 5nm N5 txheej txheem yuav tsum nyob rau lub quarter thib ob ntawm 2020. Thaum kawg ntawm tib lub xyoo, kev tsim cov chips raws li cov txheej txheem tsim khoom 5nm lossis N5P (kev ua tau zoo) yuav raug tsim tawm. Qhov muaj cov qauv qauv tso cai rau TSMC los ntsuas lub peev xwm ntawm cov khoom siv hluav taws xob yav tom ntej uas tsim los ntawm cov txheej txheem tshiab, uas lub tuam txhab yuav tham txog kom meej nyob rau lub Kaum Ob Hlis. Tab sis koj twb nrhiav tau ib yam dab tsi los ntawm kev paub daws teeb meem xa los ntawm TSMC rau kev nthuav qhia ntawm IEDM 2019.
Ua ntej qhia meej cov ntsiab lus, cia peb nco ntsoov qhov peb paub los ntawm cov lus dhau los ntawm TSMC. Piv nrog rau cov txheej txheem 7nm, nws tau lees tias qhov kev ua tau zoo ntawm 5nm chips yuav nce 15% lossis kev noj yuav raug txo los ntawm 30% yog tias qhov ua tau zoo ib yam. Cov txheej txheem N5P yuav ntxiv ntxiv 7% kev tsim khoom lossis 15% kev txuag hauv kev noj. Qhov ceev ntawm cov ntsiab lus logic yuav nce 1,8 npaug. SRAM cell scale yuav hloov los ntawm ib qho ntawm 0,75.
Hauv kev tsim cov 5nm chips, qhov ntsuas ntawm kev siv EUV scanners yuav ncav cuag qib ntawm kev paub tab. Lub transistor channel qauv yuav raug hloov, tejzaum nws yog siv germanium ua ke nrog los yog siv silicon. Qhov no yuav ua kom muaj kev txav mus los ntawm cov khoom siv hluav taws xob hauv cov channel thiab kev nce hauv cov dej ntws. Cov txheej txheem thev naus laus zis muab ntau theem tswj qhov hluav taws xob, qhov siab tshaj plaws uas yuav muab 25% kev ua haujlwm nce ntxiv piv rau tib yam hauv 7 nm txheej txheem thev naus laus zis. Lub transistor fais fab mov rau I / O interfaces yuav nyob ntawm 1,5 V txog 1,2 V.
Hauv kev tsim los ntawm qhov rau metallization thiab rau kev sib cuag, cov ntaub ntawv uas muaj kev tiv thaiv qis dua yuav raug siv. Lub ultra-high-density capacitors yuav raug tsim los ntawm kev siv hlau-dielectric-hlau Circuit Court, uas yuav ua rau cov khoom tsim tau nce 4%. Feem ntau, TSMC yuav hloov mus siv cov khoom siv qis-K tshiab. Tus txheej txheem tshiab "qhuav", Hlau Reactive Ion Etching (RIE), yuav tshwm sim hauv silicon wafer ua Circuit Court, uas yuav hloov ib nrab ntawm cov txheej txheem Damascus siv tooj liab (rau cov hlau hu me dua 30 nm). Tsis tas li ntawd thawj zaug, ib txheej ntawm graphene yuav raug siv los tsim ib qho kev thaiv ntawm cov tooj liab conductors thiab semiconductor (kom tiv thaiv electromigration).
Los ntawm cov ntaub ntawv rau lub Kaum Ob Hlis Ntuj ntawm IEDM, peb tuaj yeem glean tias ntau qhov tsis zoo ntawm 5nm chips yuav zoo dua. Yog li, qhov ceev ntawm cov ntsiab lus logic yuav siab dua thiab ncav cuag 1,84 npaug. SRAM cell kuj tseem yuav me dua, nrog thaj tsam ntawm 0,021 Β΅m2. Txhua yam yog nyob rau hauv kev txiav txim nrog kev ua tau zoo ntawm kev sim silicon - nce 15% tau txais, nrog rau qhov ua tau kom txo tau 30% kev noj nyob rau hauv cov ntaub ntawv ntawm khov ntawm lub siab zaus.
Cov txheej txheem tshiab thev naus laus zis yuav ua rau nws muaj peev xwm xaiv tau los ntawm xya qhov kev tswj hwm qhov tseem ceeb, uas yuav ntxiv ntau yam rau cov txheej txheem kev txhim kho thiab cov khoom lag luam, thiab kev siv EUV scanners yuav ua kom yooj yim ntau lawm thiab ua rau nws pheej yig dua. Raws li TSMC, hloov mus rau EUV scanners muab 0,73x txhim kho hauv kev daws teeb meem piv rau 7nm txheej txheem. Piv txwv li, los tsim cov txheej txheem metallization tseem ceeb tshaj plaws ntawm thawj txheej, tsis yog tsib lub npog ntsej muag, tsuas yog yuav tsum muaj ib lub npog ntsej muag EUV thiab, raws li, tsuas yog ib lub voj voog ntau lawm xwb tsis yog tsib. Los ntawm txoj kev, ua tib zoo saib yuav ua li cas kom huv si lub ntsiab ntawm lub nti tig tawm thaum siv EUV projection. Kev zoo nkauj, thiab yog tag nrho.
Tau qhov twg los: 3d xov.ru