Dị ka anyị maara, mgbanwe na teknụzụ usoro 3 nm ga-esonyere ya na ntụgharị gaa na nhazi transistor ọhụrụ. N'okwu Samsung, dịka ọmụmaatụ, ndị a ga-abụ transistors MBCFET (Multi Bridge Channel FET), nke ọwa transistor ga-adị ka ọtụtụ ọwa dị n'elu ibe ha n'ụdị nanopages, gbara n'akụkụ niile site na ọnụ ụzọ ámá (maka nkọwa ndị ọzọ). , hụ ).
Dị ka ndị mmepe si Belgian center Imec si kwuo, nke a bụ ihe na-aga n'ihu, mana ọ bụghị ezigbo transistor na-eji ọnụ ụzọ FinFET kwụ ọtọ. Ọ dị mma maka usoro teknụzụ nwere akpịrịkpa elementrị na-erughị 3 nm , nke ndị Belgium tụpụtara ya.
Imec ewepụtala transistor nwere ibe ibe ma ọ bụ akwụkwọ ndụdụ. Ndị a bụ otu nanopages kwụ ọtọ dị ka ọwa transistor, mana dielectric kwụ ọtọ kewapụrụ ya. N'otu akụkụ nke dielectric, a na-emepụta transistor nwere n-channel, n'aka nke ọzọ, na p-channel. Na ha abụọ gbara ya gburugburu site na ihe mkpuchi nkịtị n'ụdị ọgịrịga kwụ ọtọ.
Ibelata anya on-chip n'etiti transistor nwere ihe omume dị iche iche bụ ihe ịma aka ọzọ dị mkpa maka iweda usoro ọzọ. Simulations TCAD kwadoro na transistor ibe nke kewara ga-eweta mbelata pasent 20 na mpaghara anwụ. N'ozuzu, ihe owuwu transistor ọhụrụ ahụ ga-ebelata ogologo cell ezi uche dị elu na egwu 4,3. Selụ ga-adị mfe karị, nke na-emetụtakwa imepụta cell ebe nchekwa SRAM.
Mgbanwe dị mfe site na nanopage transistor gaa na transistor nanopage gbawara agbawa ga-enye mmụba 10% na arụmọrụ mgbe ị na-ejigide oriri, ma ọ bụ mbelata 24% na oriri na-enweghị ịrụ ọrụ. Ihe ngosi maka usoro 2nm gosipụtara na cell SRAM na-eji nanopages dị iche iche ga-enye mbelata mpaghara jikọtara ọnụ na nkwalite arụmọrụ ruru 30% na p- na n-junction spacing ruo 8 nm.
isi: 3dnews.ru