{"id":74300,"date":"2020-03-16T08:42:04","date_gmt":"2020-03-16T05:42:04","guid":{"rendered":"https:\/\/prohoster.info\/blog\/novosti-interneta\/everspin-i-globalfoundries-prodlili-soglashenie-o-sovmestnoj-razrabotke-mram-do-12-nm-tehproczessa"},"modified":"2020-03-16T08:42:04","modified_gmt":"2020-03-16T05:42:04","slug":"everspin-i-globalfoundries-prodlili-soglashenie-o-sovmestnoj-razrabotke-mram-do-12-nm-tehproczessa","status":"publish","type":"post","link":"https:\/\/prohoster.info\/nl\/blog\/news\/everspin-i-globalfoundries-prodlili-soglashenie-o-sovmestnoj-razrabotke-mram-do-12-nm-tehproczessa","title":{"rendered":"Everspin en GlobalFoundries hebben de samenwerkingsovereenkomst voor de gezamenlijke ontwikkeling van MRAM tot het 12-nm proces verlengd.","gt_translate_keys":[{"key":"rendered","format":"text"}]},"content":{"rendered":"

De enige ontwikkelaar ter wereld van discrete magnetoresistieve geheugenchips MRAM, het bedrijf Everspin Technologies, blijft de productietechnologie\u00ebn verbeteren. Vandaag werken Everspin en GlobalFoundries samen alle serverplatformen naar Linux over te zetten. Op dat moment draaiden al verschillende resource-intensieve projecten van het bedrijf op dit besturingssysteem. Onder andere een supercomputer aan de Universiteit van New Mexico.<\/a><\/noindex> om technologie voor de productie van STT-MRAM-chips te ontwikkelen met normen van 12 nm en FinFET-transistors.<\/p>\n

\"Everspin<\/p>\n

Everspin heeft meer dan 650 patenten en aanvragen met betrekking tot MRAM-geheugen. Dit geheugen werkt door informatie te schrijven in een cel, vergelijkbaar met het schrijven van gegevens op een magnetische schijf van een harde schijf. Echter, in het geval van chips heeft elke cel zijn eigen (voorwaardelijke) magnetische kop. De opvolger van dit geheugen, STT-MRAM op basis van het effect van spinmomenttransport, werkt met nog lagere energieverbruik, omdat dit plaatsvindt met behulp van lagere stromen in de schrijf- en leesmodi.<\/p>\n

Aanvankelijk produceerde het bedrijf NXP op verzoek van Everspin MRAM-geheugen in zijn fabriek in de VS. In 2014 sloot Everspin een samenwerkingsovereenkomst met GlobalFoundries. Samen begonnen ze met de ontwikkeling van productieprocessen voor discrete en ge\u00efntegreerde MRAM (STT-MRAM) met meer geavanceerde technologieprocessen.<\/p>\n

In de loop der tijd werd op de faciliteiten van GlobalFoundries de productie van 40-nm en 28-nm STT-MRAM-chips opgezet (waaronder de nieuwe 1-Gbit discrete STT-MRAM chip), en ook werd een technologieproces 22FDX voorbereid voor de integratie van STT-MRAM-arrays in controllers met behulp van een 22-nm proces op FD-SOI wafers. De nieuwe overeenkomst tussen Everspin en GlobalFoundries zal leiden tot de overgang van de productie van STT-MRAM-chips naar een 12-nm technologieproces.<\/p>\n

<\/center>
\n\"Everspin<\/p>\n

De snelheid van MRAM-geheugen benadert die van SRAM en kan deze potentieel vervangen in controllers voor het Internet of Things. Het is bovendien energie-onafhankelijk en veel duurzamer dan conventioneel NAND-geheugen. De overstap naar 12-nm normen zal de opslagdichtheid van MRAM verhogen, wat haar belangrijkste nadeel is.<\/p>\n

<\/p>\n

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Bron: 3dnews.ru<\/a> <\/p>","protected":false,"gt_translate_keys":[{"key":"rendered","format":"html"}]},"excerpt":{"rendered":"

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\u0432\u043c\u0435\u0441\u0442\u0435 \u0440\u0430\u0437\u0440\u0430\u0431\u043e\u0442\u0430\u0442\u044c \u0442\u0435\u0445\u043d\u043e\u043b\u043e\u0433\u0438\u044e \u0432\u044b\u043f\u0443\u0441\u043a\u0430 \u043c\u0438\u043a\u0440\u043e\u0441\u0445\u0435\u043c STT-MRAM \u0441 \u043d\u043e\u0440\u043c\u0430\u043c\u0438 12 \u043d\u043c \u0438 \u0442\u0440\u0430\u043d\u0437\u0438\u0441\u0442\u043e\u0440\u0430\u043c\u0438 FinFET. \u041d\u0430 \u0441\u0447\u0435\u0442\u0443 \u043a\u043e\u043c\u043f\u0430\u043d\u0438\u0438 Everspin \u0441\u0432\u044b\u0448\u0435 650 \u043f\u0430\u0442\u0435\u043d\u0442\u043e\u0432 \u0438 \u043f\u0440\u0438\u043b\u043e\u0436\u0435\u043d\u0438\u0439, \u0441\u0432\u044f\u0437\u0430\u043d\u043d\u044b\u0445 \u0441 \u043f\u0430\u043c\u044f\u0442\u044c\u044e MRAM. \u042d\u0442\u043e \u043f\u0430\u043c\u044f\u0442\u044c, \u0437\u0430\u043f\u0438\u0441\u044c \u0432 \u044f\u0447\u0435\u0439\u043a\u0443 \u043a\u043e\u0442\u043e\u0440\u043e\u0439 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