Monga tikudziwira, kusintha kwa teknoloji ya 3 nm kudzakhala limodzi ndi kusintha kwa zomangamanga zatsopano za transistor. M'mawu a Samsung, mwachitsanzo, awa adzakhala ma transistors a MBCFET (Multi Bridge Channel FET), momwe njira ya transistor idzawoneka ngati njira zingapo zomwe zili pamwamba pa wina ndi mzake mwa mawonekedwe a nanopages, ozunguliridwa mbali zonse ndi chipata (kuti mudziwe zambiri. , mwawona ).
Malinga ndi omwe akupanga kuchokera ku Belgian Center Imec, uku ndikupita patsogolo, koma osati koyenera, kamangidwe ka transistor pogwiritsa ntchito zipata zoyima za FinFET. Zoyenera pamakina aukadaulo okhala ndi masikelo ochepera 3 nm , zomwe zinaperekedwa ndi a Belgians.
Imec yapanga transistor yokhala ndi masamba ogawanika kapena Forksheet. Awa ndi ma nanopages ofanana ndi ma transistor, koma olekanitsidwa ndi dielectric yoyima. Kumbali imodzi ya dielectric, transistor yokhala ndi n-channel imapangidwa, kumbali inayo, ndi p-channel. Ndipo onse awiri azunguliridwa ndi chotsekera wamba mu mawonekedwe a nthiti yoyima.
Kuchepetsa mtunda wa pa-chip pakati pa ma transistors okhala ndi ma conductivity osiyanasiyana ndi vuto lina lalikulu pakuchepetsanso njira. Mafanizidwe a TCAD adatsimikizira kuti transistor yogawanika idzapereka kuchepetsa 20 peresenti m'dera lakufa. Nthawi zambiri, mapangidwe atsopano a transistor achepetsa kutalika kwa cell logic mpaka 4,3 tracks. Selo lidzakhala losavuta, zomwe zimagwiranso ntchito popanga cell memory ya SRAM.
Kusintha kosavuta kuchokera ku nanopage transistor kupita ku nanopage transistor yogawanika kudzapereka kuwonjezeka kwa 10% pakugwira ntchito pamene mukugwiritsa ntchito, kapena kuchepetsa 24% mukumwa popanda kuwonjezera ntchito. Mafanizidwe a njira ya 2nm adawonetsa kuti selo la SRAM logwiritsa ntchito ma nanopages olekanitsidwa lingapereke kuchepetsedwa kwa madera ophatikizana ndikusintha magwiridwe antchito mpaka 30% ndi malo a p- ndi n-junction mpaka 8 nm.
Source: 3dnews.ru