Sabata ino kampani yaku China YMTC pakupanga kukumbukira kwa 128-layer 3D NAND flash memory. Anthu aku China adzalumpha gawo lopangira ma 96-wosanjikiza kukumbukira ndipo kumapeto kwa chaka ayamba nthawi yomweyo kupanga 128-wosanjikiza kukumbukira. Motero, adzafika pamlingo wa atsogoleri amakampani, omwe ali ofanana ndi kugwedeza chiguduli chofiira pamaso pa ng'ombe. Ndipo “ng’ombe zamphongo” zinachita monga momwe zinayembekezeredwa.
Tsamba laku South Korea ETNews lero kuti Samsung yafulumizitsa chitukuko cha 160-wosanjikiza 3D NAND (kapena V-NAND, monga momwe kampani imayitanira kukumbukira kwamitundu yambiri). Samsung imatcha njira ya "super gap", kapena kusewera patsogolo, zomwe ziyenera kuthandiza atsogoleri aku South Korea tech kukhala patsogolo pa mpikisano. Popeza kupambana kwa Samsung kuli pamtima pazachuma cha South Korea, ndi nkhani yotukuka kwa dziko lonselo, chifukwa chake kampaniyo imawona ntchito yake mozama.
Samsung idabweretsa kukumbukira ndi zigawo 100+ mkati . Titha kuganiza kuti kampaniyo yakhala ikutulutsa kukumbukira kwa magawo 128 kotala lachitatu motsatizana (chiwerengero chenicheni cha zigawo sichidziwikabe). Chotsatira powonekera chiyenera kukhala Samsung kukumbukira ndi 160 kapena zigawo zambiri. Idzakhala ya m'badwo wa 7 wa kukumbukira kwa V-NAND. Malinga ndi mphekesera, kampaniyo yapita patsogolo kwambiri pakukula kwake. Pali lingaliro lakuti Samsung idzakhala yoyamba kufika chizindikiro cha 160-wosanjikiza, monga momwe zinachitikira ndi mibadwo yonse yapitayi ya kukumbukira kwa 3D NAND.
Source: 3dnews.ru