{"id":73397,"date":"2020-03-09T08:42:28","date_gmt":"2020-03-09T05:42:28","guid":{"rendered":"https:\/\/prohoster.info\/blog\/administrirovanie\/vvedenie-v-ssd-chast-4-fizicheskaya"},"modified":"2020-03-09T08:42:28","modified_gmt":"2020-03-09T05:42:28","slug":"vvedenie-v-ssd-chast-4-fizicheskaya","status":"publish","type":"post","link":"https:\/\/prohoster.info\/ro\/blog\/administrirovanie\/vvedenie-v-ssd-chast-4-fizicheskaya","title":{"rendered":"Introducere \u00een SSD. Partea 4. Fizica","gt_translate_keys":[{"key":"rendered","format":"text"}]},"content":{"rendered":"<p><img decoding=\"async\" alt=\"Introducere \u00een SSD. Partea 4. Fizica\" src=\"\/wp-content\/uploads\/2020\/03\/07ee6f41981982df22293878e6c6d99a.png\" style=\"display:block;margin: 0 auto;\" \/><br \/>\nP\u0103r\u021bile anterioare ale ciclului \u201eIntroducere \u00een SSD\u201d le-au povestit cititorilor despre istoria apari\u021biei SSD-urilor, interfe\u021bele de interac\u021biune cu acestea \u0219i factorii de form\u0103 populari. Partea a patra va vorbi despre stocarea datelor \u00een interiorul dispozitivelor de stocare.<br \/>\n<noindex><a rel=\"nofollow\" name=\"habracut\"><\/a><\/noindex><br \/>\n<i>\u00cen articolele anterioare ale ciclului:<\/i><\/p>\n<ol>\n<li><i><noindex><a rel=\"nofollow\" href=\"https:\/\/habr.com\/ru\/company\/selectel\/blog\/475304\/\">Istoria cre\u0103rii HDD \u0219i SSD<\/a><\/noindex><\/i><\/li>\n<li><i><noindex><a rel=\"nofollow\" href=\"https:\/\/habr.com\/ru\/company\/selectel\/blog\/478684\/\">Apari\u021bia interfe\u021belor de stocare<\/a><\/noindex><\/i><\/li>\n<li><i><noindex><a rel=\"nofollow\" href=\"https:\/\/habr.com\/ru\/company\/selectel\/blog\/488230\/\">Particularit\u0103\u021bile factorilor de form\u0103<\/a><\/noindex><\/i><\/li>\n<\/ol>\n<p>\nStocarea datelor \u00een SSD-uri poate fi \u00eemp\u0103r\u021bit\u0103 \u00een dou\u0103 p\u0103r\u021bi logice: stocarea informa\u021biei \u00eentr-o singur\u0103 celul\u0103 \u0219i organizarea stoc\u0103rii celulelor.<\/p>\n<p>Fiecare celul\u0103 a unui SSD stocheaz\u0103 <b>unul sau mai mul\u021bi bi\u021bi de informa\u021bie<\/b>. Pentru stocarea informa\u021biei sunt utilizate diverse <b>procese fizice<\/b>. C\u00e2nd au fost dezvoltate SSD-urile, au fost luate \u00een considerare urm\u0103toarele m\u0103rimi fizice pentru codificarea informa\u021biei:<\/p>\n<ul>\n<li><b>\u00eenc\u0103rc\u0103turi electrice<\/b> (inclusiv memoria Flash);<\/li>\n<li><b>momente magnetice<\/b> (memoria magnetoresistiv\u0103);<\/li>\n<li><b>st\u0103ri de faz\u0103<\/b> (memoria cu schimbare de stare de faz\u0103).<\/li>\n<\/ul>\n<p><\/p>\n<h2>Memoria bazat\u0103 pe \u00eenc\u0103rc\u0103turi electrice<\/h2>\n<p>\nCodificarea informa\u021biei prin intermediul \u00eenc\u0103rc\u0103turii negative st\u0103 la baza mai multor solu\u021bii:<\/p>\n<ul>\n<li>memorie EPROM (programabil\u0103 \u0219i \u0219tears\u0103 cu ultraviolete);<\/li>\n<li>memorie EEPROM (\u0219tears\u0103 electric);<\/li>\n<li>memoria Flash.<\/li>\n<\/ul>\n<p>\n<img decoding=\"async\" alt=\"Introducere \u00een SSD. Partea 4. Fizica\" src=\"\/wp-content\/uploads\/2020\/03\/8859aa8e143aeefc0a33f8255f1708f3.png\" style=\"display:block;margin: 0 auto;\" \/><br \/>\nFiecare celul\u0103 de memorie este un <b>MOSFET cu electrozi flotan\u021bi<\/b>, \u00een care se stocheaz\u0103 o \u00eenc\u0103rc\u0103tur\u0103 negativ\u0103. Diferen\u021ba fa\u021b\u0103 de un MOSFET obi\u0219nuit const\u0103 \u00een existen\u021ba unui electroz flotant - un conductor \u00een stratul de dielectric.<\/p>\n<p>La crearea unei diferen\u021be de poten\u021bial \u00eentre surs\u0103 \u0219i drenaj \u0219i cu un poten\u021bial pozitiv pe electroz, curentul va curge de la surs\u0103 la drenaj. Totu\u0219i, \u00een prezen\u021ba unei diferen\u021be de poten\u021bial suficient de mari, unii electroni \u201esparg\u201d stratul de dielectric \u0219i ajung \u00een electrozul flotant. Acest fenomen se nume\u0219te <noindex><a rel=\"nofollow\" href=\"https:\/\/ru.wikipedia.org\/wiki\/%D0%A2%D1%83%D0%BD%D0%BD%D0%B5%D0%BB%D1%8C%D0%BD%D1%8B%D0%B9_%D1%8D%D1%84%D1%84%D0%B5%D0%BA%D1%82\">efect de tunelare.<\/a><\/noindex>.<\/p>\n<p><img decoding=\"async\" alt=\"Introducere \u00een SSD. Partea 4. Fizica\" src=\"\/wp-content\/uploads\/2020\/03\/7b6141b5e53940bcc073a3ee1c327eec.png\" style=\"display:block;margin: 0 auto;\" \/><br \/>\nElectrozul flotant negativ generat creeaz\u0103 un c\u00e2mp electric care \u00eempiedic\u0103 curgerea curentului de la surs\u0103 la drenaj. Mai mult, prezen\u021ba electronilor \u00een electrozul flotant cre\u0219te tensiunea de prag la care se deschide tranzistorul. La fiecare \u201escriere\u201d \u00een electrozul flotant al tranzistorului, stratul de dielectric este u\u0219or deteriorat, ceea ce impune o limitare asupra num\u0103rului de cicluri de rescriere ale fiec\u0103rei celule.<\/p>\n<blockquote><p>Tranzistoriile MOSFET cu poart\u0103 flotant\u0103 au fost dezvoltate de Dawon Kahng \u0219i Simon Min Sze de la Bell Labs \u00een 1967. Ulterior, \u00een timpul cercet\u0103rii defectelor circuitelor integrate, s-a observat c\u0103, din cauza sarcinii din poarta flotant\u0103, a fost modificat\u0103 tensiunea de prag care deschide tranzistorul. Aceast\u0103 descoperire l-a determinat pe Dov Frohman s\u0103 \u00eenceap\u0103 lucrul la o memorie bazat\u0103 pe acest fenomen.<\/p><\/blockquote>\n<p>Modificarea tensiunii de prag permite \u201eprogramarea\u201d tranzistorilor. Tranzistori cu sarcin\u0103 \u00een poarta flotant\u0103 nu se vor deschide atunci c\u00e2nd tensiunea aplicat\u0103 pe poart\u0103 dep\u0103\u0219e\u0219te tensiunea de prag pentru tranzistorul f\u0103r\u0103 electroni, dar este mai mic\u0103 dec\u00e2t tensiunea de prag pentru tranzistorul cu electroni. S\u0103 numim aceast\u0103 valoare <b>tensiunea de citire<\/b>.<\/p>\n<h3>Memorie Programabil\u0103 \u0218tears\u0103 (EPROM)<\/h3>\n<p>\n<noindex><a rel=\"nofollow\" href=\"https:\/\/ru.wikipedia.org\/wiki\/EPROM\"><img decoding=\"async\" alt=\"Introducere \u00een SSD. Partea 4. Fizica\" src=\"\/wp-content\/uploads\/2020\/03\/bfe650362b93b530401453130147d679.png\" style=\"display:block;margin: 0 auto;\" \/><\/a><\/noindex><br \/>\n\u00cen 1971, angajatul Intel, Dov Frohman, a creat o memorie rescrier\u0103 pe tranzistori, numit\u0103 <b>Memorie Programabil\u0103 \u0218tears\u0103 (EPROM)<\/b>. Scrierea \u00een memorie se f\u0103cea printr-un dispozitiv special - programator. Programatorul aplic\u0103 pe cip o tensiune mai mare dec\u00e2t cea utilizat\u0103 \u00een circuitele digitale, \u00ab\u00eenregistr\u00e2nd\u00bb electroni \u00een por\u021bile flotante ale tranzistorilor acolo unde este necesar.<\/p>\n<p><noindex><a rel=\"nofollow\" href=\"https:\/\/ru.wikipedia.org\/wiki\/EPROM\"><img decoding=\"async\" alt=\"Introducere \u00een SSD. Partea 4. Fizica\" src=\"\/wp-content\/uploads\/2020\/03\/959b0d6bac92dafb1eb4aa46ea03952c.png\" style=\"display:block;margin: 0 auto;\" \/><\/a><\/noindex><br \/>\n\u00cen memoria EPROM nu era prev\u0103zut\u0103 \u0219tergerea por\u021bilor flotante ale tranzistorilor prin metode electrice. \u00cen schimb, se propunea utilizarea radia\u021biei ultraviolete puternice pentru a influen\u021ba tranzistorii, fotonii acesteia oferind electronilor energia necesar\u0103 pentru a p\u0103r\u0103si poarta flotant\u0103. Pentru a permite accesul ultravioletului \u00een profunzimea cipului, pe carcas\u0103 s-a ad\u0103ugat sticl\u0103 de quartz.<\/p>\n<p><noindex><a rel=\"nofollow\" href=\"https:\/\/newsroom.intel.com\/news\/intel-50-qa-intels-dov-frohman-inventor-eprom\/#gs.wum63d\"><img decoding=\"async\" alt=\"Introducere \u00een SSD. Partea 4. Fizica\" src=\"\/wp-content\/uploads\/2020\/03\/725b3ed07b0a5c5ceb285f6b7e234f08.png\" style=\"display:block;margin: 0 auto;\" \/><\/a><\/noindex><\/p>\n<blockquote><p>Frohman \u0219i-a prezentat pentru prima dat\u0103 prototipul EPROM \u00een februarie 1971 la o conferin\u021b\u0103 despre circuite solide \u00een Philadelphia. Gordon Moore \u00ee\u0219i aminte\u0219te de demonstra\u021bie: \u00abDov a demonstrat un model de bi\u021bi \u00een celulele de memorie EPROM. C\u00e2nd celulele erau expuse luminii ultraviolete, bi\u021bii disp\u0103reau unul c\u00e2te unul, p\u00e2n\u0103 c\u00e2nd logo-ul Intel, cunoscut anterior, a disp\u0103rut complet. ... Bi\u021bii disp\u0103reau, iar c\u00e2nd ultimul a disp\u0103rut, \u00eentreaga audien\u021b\u0103 a aplaudat. Articolul lui Dov a fost recunoscut ca fiind cel mai bun la conferin\u021b\u0103.\u00bb<i> \u2014 Traducerea articolului <noindex><a rel=\"nofollow\" href=\"https:\/\/newsroom.intel.com\/news\/intel-at-50-erasable-programmable-read-only-memory\">newsroom.intel.com<\/a><\/noindex><\/i><\/p><\/blockquote>\n<p>Memoria EPROM este mai scump\u0103 dec\u00e2t dispozitivele de memorie permanent\u0103 \u201ede unic\u0103 folosin\u021b\u0103\u201d (PROM) utilizate anterior, \u00eens\u0103 posibilitatea de reprogramare permite debugarea circuitelor mai rapid \u0219i reduce timpul de dezvoltare a noului hardware.<\/p>\n<p>Reprogramarea PROM-ului cu lumin\u0103 ultraviolet\u0103 a fost o realizare semnificativ\u0103, totu\u0219i, ideea reprogram\u0103rii electrice deja \u201eplutea\u201d \u00een aer.<\/p>\n<h3>Memorie Programmable Read-Only Electrically Erasable<\/h3>\n<p>\n\u00cen 1972, trei japonezi: Yasuo Tarui, Yutaka Hayashi \u0219i Kiyoko Nagai au prezentat primul dispozitiv de memorie permanent\u0103 reprogramabil\u0103 electric (EEPROM sau E2PROM). Ulterior, cercet\u0103rile lor \u0219tiin\u021bifice vor deveni parte din brevetele pentru implement\u0103rile comerciale ale memoriei EEPROM.<\/p>\n<p>Fiecare celul\u0103 de memorie EEPROM este alc\u0103tuit\u0103 din mai multe tranzistori:<\/p>\n<ul>\n<li>un tranzistor cu por\u021bi flotante pentru stocarea unei bi\u021bi;<\/li>\n<li>un tranzistor pentru controlul modului de citire-scriere.<\/li>\n<\/ul>\n<p>\nAceast\u0103 construc\u021bie complic\u0103 semnificativ circuitele electrice, astfel \u00eenc\u00e2t memoria EEPROM a fost utilizat\u0103 \u00een cazurile \u00een care dimensiunea mic\u0103 a memoriei nu era critic\u0103. Pentru stocarea unor cantit\u0103\u021bi mari de date, EPROM r\u0103m\u00e2nea \u00een continuare utilizat.<\/p>\n<h3>Memoria Flash<\/h3>\n<p>\nMemoria Flash, care combin\u0103 cele mai bune caracteristici ale EPROM \u0219i EEPROM, a fost dezvoltat\u0103 de profesorul japonez Fujio Masuoka, inginer al companiei Toshiba, \u00een 1980. Prima dezvoltare a fost denumit\u0103 memorie Flash de tip NOR \u0219i, ca \u0219i predecesoarele sale, este bazat\u0103 pe tranzistori MOS cu por\u021bi flotante.<\/p>\n<p><img decoding=\"async\" alt=\"Introducere \u00een SSD. Partea 4. Fizica\" src=\"\/wp-content\/uploads\/2020\/03\/afb642e62142301a0430736f88a747a9.png\" style=\"display:block;margin: 0 auto;\" \/><br \/>\nMemoria Flash de tip NOR este un array bidimensional de tranzistori. Por\u021bile tranzistorilor sunt conectate la linia de cuvinte, iar drenele la linia de bi\u021bi. C\u00e2nd se aplic\u0103 o tensiune pe linia de cuvinte, tranzistorii care con\u021bin electroni, adic\u0103 cei care stocheaz\u0103 \u201e1\u201d, nu se vor deschide \u0219i curentul nu va curge. Pe baza prezen\u021bei sau absen\u021bei curentului pe linia de bi\u021bi se trage concluzia despre valoarea bitului.<\/p>\n<p><img decoding=\"async\" alt=\"Introducere \u00een SSD. Partea 4. Fizica\" src=\"\/wp-content\/uploads\/2020\/03\/53a8762b0e7cec9b6ebdf5fb91e9b328.png\" style=\"display:block;margin: 0 auto;\" \/><br \/>\nDup\u0103 \u0219apte ani, Fujio Masuoka a dezvoltat memorie Flash de tip NAND. Acest tip de memorie se distinge prin num\u0103rul de tranzistori pe linia de bi\u021bi. \u00cen memoria de tip NOR, fiecare tranzistor este conectat direct la linia de bi\u021bi, \u00een timp ce \u00een memoria NAND, tranzistorii sunt conecta\u021bi \u00een serie.<\/p>\n<p><img decoding=\"async\" alt=\"Introducere \u00een SSD. Partea 4. Fizica\" src=\"\/wp-content\/uploads\/2020\/03\/14db892a94f6bf36fe3f9dc8f5ad76c3.png\" style=\"display:block;margin: 0 auto;\" \/><br \/>\nCitirea din memorie \u00eentr-o astfel de configura\u021bie este mai complicat\u0103: pe linia de bit necesar\u0103 este aplicat\u0103 tensiunea necesar\u0103 pentru citire, iar pe toate celelalte linii de bit se aplic\u0103 o tensiune care deschide tranzistorul, indiferent de nivelul de \u00eenc\u0103rcare din acesta. Deoarece toate celelalte tranzistori sunt garantat deschi\u0219i, prezen\u021ba tensiunii pe linia de bit depinde doar de un singur tranzistor, pe care s-a aplicat tensiunea de citire.<\/p>\n<p>Inven\u021bia memoriei Flash de tip NAND permite o densitate semnificativ mai mare a circuitului, plas\u00e2nd un volum mai mare de memorie \u00een aceea\u0219i dimensiune. P\u00e2n\u0103 \u00een 2007, volumul de memorie a fost crescut prin reducerea procesului tehnologic de fabricare a cipului.<\/p>\n<p>\u00cen 2007, compania Toshiba a prezentat o nou\u0103 versiune a memoriei NAND: <b>Vertical NAND (V-NAND)<\/b>, cunoscut\u0103 de asemenea ca <b>3D NAND<\/b>. \u00cen aceast\u0103 tehnologie, accentul se pune pe plasarea tranzistorilor \u00een mai multe straturi, ceea ce permite din nou densificarea circuitului \u0219i cre\u0219terea volumului de memorie. Cu toate acestea, densificarea circuitului nu poate fi repetat\u0103 la nesf\u00e2r\u0219it, astfel c\u0103 au fost investigate alte metode de cre\u0219tere a volumului de memorie stocat\u0103.<\/p>\n<p><img decoding=\"async\" alt=\"Introducere \u00een SSD. Partea 4. Fizica\" src=\"\/wp-content\/uploads\/2020\/03\/11bbf1b13a91ae464c305fac941218ec.png\" style=\"display:block;margin: 0 auto;\" \/><br \/>\nIni\u021bial, fiecare tranzistor stoca dou\u0103 niveluri de \u00eenc\u0103rcare: zero logic \u0219i unu logic. Aceast\u0103 abordare se nume\u0219te <b>Single-Level Cell (SLC)<\/b>. Dispozitivele cu aceast\u0103 tehnologie se remarc\u0103 prin fiabilitate ridicat\u0103 \u0219i un num\u0103r maxim de ciclo de scriere.<\/p>\n<p>\u00cen timp, s-a luat decizia de a cre\u0219te volumul dispozitivelor \u00een detrimentul durabilit\u0103\u021bii. Astfel, num\u0103rul de niveluri de \u00eenc\u0103rcare \u00een celul\u0103 a crescut p\u00e2n\u0103 la patru, iar tehnologia a fost numit\u0103 <b>Multi-Level Cell (MLC)<\/b>. Apoi au ap\u0103rut <b>Triple-Level Cell (TLC)<\/b> \u0219i <b>Quad-Level Cell (QLC)<\/b>. \u00cen viitor va ap\u0103rea un nou nivel \u2014 <b>Penta-Level Cell (PLC)<\/b> care va avea cinci bi\u021bi \u00eentr-o singur\u0103 celul\u0103. Cu c\u00e2t mai mul\u021bi bi\u021bi sunt stoca\u021bi \u00eentr-o singur\u0103 celul\u0103, cu at\u00e2t mai mare este volumul dispozitivului pentru aceea\u0219i cost, dar durabilitatea este mai mic\u0103.<\/p>\n<p>Densificarea circuitului prin reducerea procesului tehnologic \u0219i cre\u0219terea num\u0103rului de bi\u021bi \u00eentr-un singur tranzistor afecteaz\u0103 negativ datele stocate. De\u0219i EPROM \u0219i EEPROM utilizeaz\u0103 aceia\u0219i tranzistori, acestea pot stoca date f\u0103r\u0103 alimentare timp de zece ani, \u00een timp ce memoria Flash modern\u0103 poate \u201euita\u201d totul deja dup\u0103 un an.<\/p>\n<blockquote><p>Utilizarea memoriei Flash \u00een industria aerospa\u021bial\u0103 este problematic\u0103, deoarece radia\u021bia afecteaz\u0103 negativ electronii din por\u021bile flotante.<\/p><\/blockquote>\n<p>Problemele men\u021bionate \u00eempiedic\u0103 memoria flash s\u0103 devin\u0103 liderul incontestabil \u00een domeniul stoc\u0103rii informa\u021biilor. De\u0219i unit\u0103\u021bile bazate pe memoria flash sunt larg r\u0103sp\u00e2ndite, se desf\u0103\u0219oar\u0103 cercet\u0103ri asupra altor tipuri de memorie care nu au aceste defecte, printre care stocarea informa\u021biilor \u00een momente magnetice \u0219i st\u0103ri de faz\u0103.<\/p>\n<h2>Memorie magnetorezistiv\u0103<\/h2>\n<p>\n<noindex><a rel=\"nofollow\" href=\"https:\/\/www.youtube.com\/watch?v=lne8r2mIwuA\"><img decoding=\"async\" alt=\"Introducere \u00een SSD. Partea 4. Fizica\" src=\"\/wp-content\/uploads\/2020\/03\/12ad7d4ed598506d78199c56e91a3831.png\" style=\"display:block;margin: 0 auto;\" \/><\/a><\/noindex><br \/>\nCodificarea informa\u021biei prin momente magnetice a ap\u0103rut \u00een 1955 sub form\u0103 de memorie pe miezuri magnetice. P\u00e2n\u0103 la mijlocul anilor 1970, memoria pe ferit\u0103 a fost principalul tip de memorie. Citirea unui bit dintr-un astfel de tip de memorie ducea la dezmagnetizarea inelului \u0219i pierderea informa\u021biei. Astfel, dup\u0103 citirea unui bit, acesta trebuia s\u0103 fie scris din nou.<\/p>\n<p>\u00cen dezvolt\u0103rile moderne ale memoriei magnetorezistive, \u00een locul inelelor se folosesc dou\u0103 straturi de ferromagnetice, separate printr-un dielectric. Un strat este un magnet permanent, iar cel\u0103lalt \u00ee\u0219i schimb\u0103 direc\u021bia magnetiz\u0103rii. Citirea unui bit dintr-o astfel de celul\u0103 se reduce la m\u0103surarea rezisten\u021bei la trecerea curentului: dac\u0103 straturile sunt magnetizate \u00een direc\u021bii opuse, atunci rezisten\u021ba este mai mare \u0219i aceasta este echivalent\u0103 cu valoarea \u201e1\u201d.<\/p>\n<p>Memoria pe ferit\u0103 nu necesit\u0103 o surs\u0103 de alimentare constant\u0103 pentru a men\u021bine informa\u021bia \u00eenregistrat\u0103, totu\u0219i c\u00e2mpul magnetic al celulei poate influen\u021ba \u201evecinul\u201d, ceea ce impune o limitare asupra densit\u0103\u021bii circuitului.<\/p>\n<blockquote><p>Conform <noindex><a rel=\"nofollow\" href=\"https:\/\/www.jedec.org\/sites\/default\/files\/Alvin_Cox%20%5BCompatibility%20Mode%5D_0.pdf\">JEDEC<\/a><\/noindex> Unit\u0103\u021bile SSD bazate pe memorie flash ar trebui s\u0103 p\u0103streze informa\u021bia f\u0103r\u0103 alimentare timp de cel pu\u021bin trei luni la o temperatur\u0103 ambiental\u0103 de 40\u00b0C. Dezvoltat de Intel <noindex><a rel=\"nofollow\" href=\"https:\/\/3dnews.ru\/983125\">cipul bazat pe memorie magnetorezistiv\u0103<\/a><\/noindex> promite s\u0103 men\u021bin\u0103 datele timp de zece ani la o temperatur\u0103 de 200\u00b0C.<\/p><\/blockquote>\n<p>\u00cen ciuda complexit\u0103\u021bii dezvolt\u0103rii, memoria magnetorezistiv\u0103 nu se degradeaz\u0103 \u00een timpul utiliz\u0103rii \u0219i are cele mai bune performan\u021be dintre toate tipurile de memorie, ceea ce nu permite s\u0103 fie neglijat\u0103 aceast\u0103 form\u0103 de memorie.<\/p>\n<h2>Memorie cu schimbare de stare pha<\/h2>\n<p>\nAl treilea tip promi\u021b\u0103tor de memorie este memorie bazat\u0103 pe tranzi\u021bia de faz\u0103. Acest tip de memorie folose\u0219te propriet\u0103\u021bile chalcogenidelor de a trece \u00eentre starea cristalizat\u0103 \u0219i cea amorf\u0103 la \u00eenc\u0103lzire.<\/p>\n<blockquote><p><b>Chalcogenide<\/b> \u2014 conexiuni binare ale metalelor cu grupul 16 (grupul 6 al subgrupului principal) din tabelul periodic al lui Mendeleev. De exemplu, \u00een CD-RW, DVD-RW, DVD-RAM \u0219i discurile Blu-ray se folosesc tellururi de germaniu (GeTe) \u0219i tellururi de antimoniu (III) (Sb2Te3).<\/p><\/blockquote>\n<p>Cercet\u0103rile privind aplicarea tranzi\u021biei de faz\u0103 pentru stocarea informa\u021biei au fost realizate \u00een <b>anul 1960 de Stanford Ovshinsky, \u00eens\u0103 atunci nu s-a ajuns la realizarea comercial\u0103. \u00cen anii 2000, interesul pentru tehnologie a reap\u0103rut, Samsung a brevetat o tehnologie care permite comutarea unui bit \u00een 5 ns, iar Intel \u0219i STMicroelectronics au crescut num\u0103rul de st\u0103ri la patru, astfel dubl\u00e2nd capacitatea posibil\u0103.<\/b> La \u00eenc\u0103lzirea peste punctul de topire, chalcogenidul \u00ee\u0219i pierde structura cristalin\u0103 \u0219i, r\u0103cindu-se, se transform\u0103 \u00eentr-o form\u0103 amorf\u0103, caracterizat\u0103 printr-o rezisten\u021b\u0103 electric\u0103 mare. La r\u00e2ndul s\u0103u, la \u00eenc\u0103lzirea la o temperatur\u0103 superioar\u0103 punctului de cristalizare, dar inferioar\u0103 punctului de topire, chalcogenidul revine la starea cristalin\u0103 cu un nivel sc\u0103zut de rezisten\u021b\u0103.<\/p>\n<p>Memoria cu tranzi\u021bie de faz\u0103 nu necesit\u0103 \u201ere\u00eenc\u0103rcare\u201d \u00een timp, de asemenea, nu este sensibil\u0103 la radia\u021biile de radia\u021bie, spre deosebire de memoria bazat\u0103 pe sarcini electrice. Acest tip de memorie poate p\u0103stra informa\u021biile timp de 300 de ani la o temperatur\u0103 de 85\u00b0C.<\/p>\n<p>Se consider\u0103 c\u0103 dezvoltarea Intel, tehnologia<\/p>\n<p>3D Crosspoint (3D XPoint) <b>folose\u0219te exact tranzi\u021biile de faz\u0103 pentru stocarea informa\u021biei. 3D XPoint este utilizat \u00een memorii Intel\u00ae Optane\u2122 Memory, pentru care se declar\u0103 o durabilitate mai mare.<\/b> utilizeaz\u0103 exact tranzi\u021biile de faz\u0103 pentru stocarea informa\u021biilor. 3D XPoint este folosit \u00een unit\u0103\u021bile de stocare Intel&reg; Optane&trade; Memory, pentru care se promite o durabilitate crescut\u0103.<\/p>\n<h2>Concluzie<\/h2>\n<p>\nReducerea uzurii celulelor, compactarea acestora \u0219i cre\u0219terea capacit\u0103\u021bii totale a unit\u0103\u021bii de stocare - acestea sunt direc\u021biile care sunt \u00een prezent promi\u021b\u0103toare pentru dezvoltarea ulterioar\u0103 a unit\u0103\u021bilor de stocare solide.<\/p>\n<p>Pute\u021bi testa cele mai avansate unit\u0103\u021bi NAND \u0219i 3D XPoint deja acum \u00een<\/p>\n<blockquote><p>Selectel LAB <noindex><a rel=\"nofollow\" href=\"http:\/\/slc.tl\/S-MoX\">Selectel LAB<\/a><\/noindex>.<\/p><\/blockquote>\n<p>Crede\u021bi c\u0103 tehnologia de stocare a informa\u021biilor pe sarcini electrice va fi \u00eenlocuit\u0103 de altele, cum ar fi discurile din cuar\u021b sau memoriile optice pe nanocristale de sare?<br \/>\n<br \/>Sursa: <a content=\"nofollow\" rel=\"nofollow\" href=\"https:\/\/habr.com\/ru\/company\/selectel\/blog\/491264\/\">habr.com<\/a> <\/p>","protected":false,"gt_translate_keys":[{"key":"rendered","format":"html"}]},"excerpt":{"rendered":"<p>\u041f\u0440\u043e\u0448\u043b\u044b\u0435 \u0447\u0430\u0441\u0442\u0438 \u0446\u0438\u043a\u043b\u0430 \u00ab\u0412\u0432\u0435\u0434\u0435\u043d\u0438\u0435 \u0432 SSD\u00bb \u043f\u043e\u0432\u0435\u0434\u0430\u043b\u0438 \u0447\u0438\u0442\u0430\u0442\u0435\u043b\u044e \u043f\u0440\u043e \u0438\u0441\u0442\u043e\u0440\u0438\u044e \u043f\u043e\u044f\u0432\u043b\u0435\u043d\u0438\u044f SSD-\u043d\u0430\u043a\u043e\u043f\u0438\u0442\u0435\u043b\u0435\u0439, \u0438\u043d\u0442\u0435\u0440\u0444\u0435\u0439\u0441\u044b \u0432\u0437\u0430\u0438\u043c\u043e\u0434\u0435\u0439\u0441\u0442\u0432\u0438\u044f \u0441 \u043d\u0438\u043c\u0438 \u0438 \u043f\u043e\u043f\u0443\u043b\u044f\u0440\u043d\u044b\u0435 \u0444\u043e\u0440\u043c-\u0444\u0430\u043a\u0442\u043e\u0440\u044b. \u0427\u0435\u0442\u0432\u0451\u0440\u0442\u0430\u044f \u0447\u0430\u0441\u0442\u044c \u0440\u0430\u0441\u0441\u043a\u0430\u0436\u0435\u0442 \u043e \u0445\u0440\u0430\u043d\u0435\u043d\u0438\u0438 \u0434\u0430\u043d\u043d\u044b\u0445 \u0432\u043d\u0443\u0442\u0440\u0438 \u043d\u0430\u043a\u043e\u043f\u0438\u0442\u0435\u043b\u0435\u0439. \u0412 \u043f\u0440\u0435\u0434\u044b\u0434\u0443\u0449\u0438\u0445 \u0441\u0442\u0430\u0442\u044c\u044f\u0445 \u0446\u0438\u043a\u043b\u0430: \u0418\u0441\u0442\u043e\u0440\u0438\u044f \u0441\u043e\u0437\u0434\u0430\u043d\u0438\u044f HDD \u0438 SSD \u0412\u043e\u0437\u043d\u0438\u043a\u043d\u043e\u0432\u0435\u043d\u0438\u0435 \u0438\u043d\u0442\u0435\u0440\u0444\u0435\u0439\u0441\u043e\u0432 \u043d\u0430\u043a\u043e\u043f\u0438\u0442\u0435\u043b\u0435\u0439 \u041e\u0441\u043e\u0431\u0435\u043d\u043d\u043e\u0441\u0442\u0438 \u0444\u043e\u0440\u043c-\u0444\u0430\u043a\u0442\u043e\u0440\u043e\u0432 \u0425\u0440\u0430\u043d\u0435\u043d\u0438\u0435 \u0434\u0430\u043d\u043d\u044b\u0445 \u0432 \u0442\u0432\u0435\u0440\u0434\u043e\u0442\u0435\u043b\u044c\u043d\u044b\u0445 \u043d\u0430\u043a\u043e\u043f\u0438\u0442\u0435\u043b\u044f\u0445 \u043c\u043e\u0436\u043d\u043e \u0440\u0430\u0437\u0434\u0435\u043b\u0438\u0442\u044c \u043d\u0430 \u0434\u0432\u0435 \u043b\u043e\u0433\u0438\u0447\u0435\u0441\u043a\u0438\u0435 \u0447\u0430\u0441\u0442\u0438: \u0445\u0440\u0430\u043d\u0435\u043d\u0438\u0435 \u0438\u043d\u0444\u043e\u0440\u043c\u0430\u0446\u0438\u0438 \u0432 [&hellip;]<\/p>\n","protected":false,"gt_translate_keys":[{"key":"rendered","format":"html"}]},"author":1,"featured_media":73398,"comment_status":"open","ping_status":"open","sticky":false,"template":"","format":"standard","meta":{"footnotes":""},"categories":[688],"tags":[],"class_list":["post-73397","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-administrirovanie"],"aioseo_notices":[],"aioseo_head":"\n\t\t<!-- All in One SEO 5.0.2.1 - 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