{"id":73397,"date":"2020-03-09T08:42:28","date_gmt":"2020-03-09T05:42:28","guid":{"rendered":"https:\/\/prohoster.info\/blog\/administrirovanie\/vvedenie-v-ssd-chast-4-fizicheskaya"},"modified":"2020-03-09T08:42:28","modified_gmt":"2020-03-09T05:42:28","slug":"vvedenie-v-ssd-chast-4-fizicheskaya","status":"publish","type":"post","link":"https:\/\/prohoster.info\/sk\/blog\/administrirovanie\/vvedenie-v-ssd-chast-4-fizicheskaya","title":{"rendered":"\u00davod do SSD. \u010cas\u0165 4. Fyzick\u00e1","gt_translate_keys":[{"key":"rendered","format":"text"}]},"content":{"rendered":"<p><img decoding=\"async\" alt=\"\u00davod do SSD. \u010cas\u0165 4. Fyzick\u00e1\" src=\"\/wp-content\/uploads\/2020\/03\/07ee6f41981982df22293878e6c6d99a.png\" style=\"display:block;margin: 0 auto;\" \/><br \/>\nPredch\u00e1dzaj\u00face \u010dasti cyklu &laquo;\u00davod do SSD&raquo; \u010ditate\u013ea obozn\u00e1mili s hist\u00f3riou vzniku SSD diskov, rozhran\u00edm na ich interakciu a popul\u00e1rnymi form\u00e1tmi. \u0160tvrt\u00e1 \u010das\u0165 sa zameriava na ukladanie d\u00e1t vo vn\u00fatri diskov.<br \/>\n<noindex><a rel=\"nofollow\" name=\"habracut\"><\/a><\/noindex><br \/>\n<i>V predch\u00e1dzaj\u00facich \u010dl\u00e1nkoch cyklu:<\/i><\/p>\n<ol>\n<li><i><noindex><a rel=\"nofollow\" href=\"https:\/\/habr.com\/ru\/company\/selectel\/blog\/475304\/\">Hist\u00f3ria vzniku HDD a SSD<\/a><\/noindex><\/i><\/li>\n<li><i><noindex><a rel=\"nofollow\" href=\"https:\/\/habr.com\/ru\/company\/selectel\/blog\/478684\/\">Vznik rozhran\u00ed diskov<\/a><\/noindex><\/i><\/li>\n<li><i><noindex><a rel=\"nofollow\" href=\"https:\/\/habr.com\/ru\/company\/selectel\/blog\/488230\/\">Charakteristiky form\u00e1tov<\/a><\/noindex><\/i><\/li>\n<\/ol>\n<p>\nUkladanie d\u00e1t v pevn\u00fdch diskoch m\u00f4\u017eeme rozdeli\u0165 do dvoch logick\u00fdch \u010dast\u00ed: ukladanie inform\u00e1ci\u00ed v jednej bunke a organiz\u00e1ciu ukladania buniek.<\/p>\n<p>Ka\u017ed\u00e1 bunka pevn\u00e9ho disku uchov\u00e1va <b>jeden alebo nieko\u013eko bitov inform\u00e1ci\u00ed<\/b>. Na ukladanie inform\u00e1ci\u00ed sa pou\u017e\u00edvaj\u00fa r\u00f4zne <b>fyzik\u00e1lne procesy<\/b>. Pri v\u00fdvoji pevn\u00fdch diskov sa zoh\u013eadnili nasleduj\u00face fyzik\u00e1lne veli\u010diny na k\u00f3dovanie inform\u00e1ci\u00ed:<\/p>\n<ul>\n<li><b>elektrick\u00e9 n\u00e1boje<\/b> (vr\u00e1tane Flash pam\u00e4te);<\/li>\n<li><b>magnetick\u00e9 momenty<\/b> (magnetorezist\u00edvna pam\u00e4\u0165);<\/li>\n<li><b>f\u00e1zov\u00e9 stavy<\/b> (pam\u00e4\u0165 so zmenou f\u00e1zov\u00e9ho stavu).<\/li>\n<\/ul>\n<p><\/p>\n<h2>Pam\u00e4\u0165 zalo\u017een\u00e1 na elektrick\u00fdch n\u00e1bojoch<\/h2>\n<p>\nK\u00f3dovanie inform\u00e1ci\u00ed pomocou z\u00e1porn\u00e9ho n\u00e1boja je z\u00e1kladom nieko\u013ek\u00fdch rie\u0161en\u00ed:<\/p>\n<ul>\n<li>mazate\u013en\u00e9 ultrafialov\u00fdm \u017eiaren\u00edm EPROM;<\/li>\n<li>elektricky mazate\u013en\u00e9 EPROM;<\/li>\n<li>Flash pam\u00e4\u0165.<\/li>\n<\/ul>\n<p>\n<img decoding=\"async\" alt=\"\u00davod do SSD. \u010cas\u0165 4. Fyzick\u00e1\" src=\"\/wp-content\/uploads\/2020\/03\/8859aa8e143aeefc0a33f8255f1708f3.png\" style=\"display:block;margin: 0 auto;\" \/><br \/>\nKa\u017ed\u00e1 pam\u00e4\u0165ov\u00e1 bunka je <b>pole MOSFET tranzistoru s pl\u00e1vaj\u00facim g\u00e1tom<\/b>, v ktorom je ulo\u017een\u00fd z\u00e1porn\u00fd n\u00e1boj. Jeho odli\u0161nos\u0165 od be\u017en\u00e9ho MOSFET tranzistoru spo\u010d\u00edva v pr\u00edtomnosti pl\u00e1vaj\u00faceho g\u00e1tu \u2014 vodi\u010da v dielektrickej vrstve.<\/p>\n<p>Pri vytv\u00e1ran\u00ed rozdielu potenci\u00e1lov medzi zdrojom a odtokom a pr\u00edtomnosti kladn\u00e9ho potenci\u00e1lu na gate pr\u00fadi elektrick\u00fd pr\u00fad zo zdroja do odtoku. Av\u0161ak pri dostato\u010dne ve\u013ekom rozdiele potenci\u00e1lov niektor\u00e9 elektr\u00f3ny &bdquo;prenikaj\u00fa&ldquo; dielektrickou vrstvou a kon\u010dia v pl\u00e1vaj\u00facom gate. Tento jav sa naz\u00fdva <noindex><a rel=\"nofollow\" href=\"https:\/\/ru.wikipedia.org\/wiki\/%D0%A2%D1%83%D0%BD%D0%BD%D0%B5%D0%BB%D1%8C%D0%BD%D1%8B%D0%B9_%D1%8D%D1%84%D1%84%D0%B5%D0%BA%D1%82\">tunelov\u00fd efekt<\/a><\/noindex>.<\/p>\n<p><img decoding=\"async\" alt=\"\u00davod do SSD. \u010cas\u0165 4. Fyzick\u00e1\" src=\"\/wp-content\/uploads\/2020\/03\/7b6141b5e53940bcc073a3ee1c327eec.png\" style=\"display:block;margin: 0 auto;\" \/><br \/>\nZ\u00e1porn\u00e9 nabit\u00e9 pl\u00e1vaj\u00face gate vytv\u00e1ra elektrick\u00e9 pole, ktor\u00e9 br\u00e1ni pr\u00fadeniu pr\u00fadu zo zdroja do odtoku. Navy\u0161e, pr\u00edtomnos\u0165 elektr\u00f3nov v pl\u00e1vaj\u00facom gate zvy\u0161uje prahov\u00e9 nap\u00e4tie, pri ktorom sa tranzistor otvor\u00ed. Pri ka\u017edom &bdquo;z\u00e1pise&ldquo; do pl\u00e1vaj\u00faceho g\u00e1tu tranzistora sa dielektrick\u00e1 vrstva mierne po\u0161kodzuje, \u010do obmedzuje po\u010det prepisovac\u00edch cyklov ka\u017edej bunky.<\/p>\n<blockquote><p>Poln\u00ed MOS tranzistory s plovouc\u00ed br\u00e1nou byly vyvinuty Davonem Kahngem a Simonem Min Ziem z Bell Labs v roce 1967. Pozd\u011bji, p\u0159i zkoum\u00e1n\u00ed vad integrovan\u00fdch obvod\u016f, bylo zji\u0161t\u011bno, \u017ee v d\u016fsledku n\u00e1boje v plovouc\u00ed br\u00e1n\u011b do\u0161lo ke zm\u011bn\u011b prahov\u00e9ho nap\u011bt\u00ed, kter\u00e9 otev\u0159e tranzistor. Tento objev p\u0159im\u011bl Dova Frohmana zah\u00e1jit pr\u00e1ci na pam\u011bti zalo\u017een\u00e9 na tomto fenom\u00e9nu.<\/p><\/blockquote>\n<p>Zm\u011bna prahov\u00e9ho nap\u011bt\u00ed umo\u017e\u0148uje \u201eprogramov\u00e1n\u00ed\u201c tranzistor\u016f. Tranzistory s n\u00e1bojem v plovouc\u00ed br\u00e1n\u011b se neotev\u0159ou p\u0159i aplikaci nap\u011bt\u00ed na br\u00e1nu vy\u0161\u0161\u00edho ne\u017e prahov\u00e9 nap\u011bt\u00ed pro tranzistor bez elektron\u016f, ale ni\u017e\u0161\u00ed ne\u017e prahov\u00e9 nap\u011bt\u00ed pro tranzistor s elektrony. Ozna\u010dme tuto hodnotu <b>nap\u011bt\u00edm \u010dten\u00ed<\/b>.<\/p>\n<h3>Erasable Programmable Read-Only Memory<\/h3>\n<p>\n<noindex><a rel=\"nofollow\" href=\"https:\/\/ru.wikipedia.org\/wiki\/EPROM\"><img decoding=\"async\" alt=\"\u00davod do SSD. \u010cas\u0165 4. Fyzick\u00e1\" src=\"\/wp-content\/uploads\/2020\/03\/bfe650362b93b530401453130147d679.png\" style=\"display:block;margin: 0 auto;\" \/><\/a><\/noindex><br \/>\nV roce 1971 zam\u011bstnanec spole\u010dnosti Intel, Dov Frohman, vytvo\u0159il p\u0159episovatelnou pam\u011b\u0165 na tranzistorech, nazvanou <b>Erasable Programmable Read-Only Memory (EPROM)<\/b>. Z\u00e1pis do pam\u011bti prob\u00edhal pomoc\u00ed speci\u00e1ln\u00edho za\u0159\u00edzen\u00ed \u2014 program\u00e1toru. Program\u00e1tor na \u010dip aplikuje vy\u0161\u0161\u00ed nap\u011bt\u00ed, ne\u017e se pou\u017e\u00edv\u00e1 v digit\u00e1ln\u00edch obvodech, a t\u00edm \u201ezap\u00ed\u0161e\u201c elektrony do plovouc\u00edch bran tranzistor\u016f, kde je to pot\u0159eba.<\/p>\n<p><noindex><a rel=\"nofollow\" href=\"https:\/\/ru.wikipedia.org\/wiki\/EPROM\"><img decoding=\"async\" alt=\"\u00davod do SSD. \u010cas\u0165 4. Fyzick\u00e1\" src=\"\/wp-content\/uploads\/2020\/03\/959b0d6bac92dafb1eb4aa46ea03952c.png\" style=\"display:block;margin: 0 auto;\" \/><\/a><\/noindex><br \/>\nV pam\u011bti EPROM nebylo pl\u00e1nov\u00e1no elektrick\u00e9 vymaz\u00e1n\u00ed plovouc\u00edch bran tranzistor\u016f. M\u00edsto toho se navrhovalo vystavit tranzistory siln\u00e9mu ultrafialov\u00e9mu z\u00e1\u0159en\u00ed, jeho\u017e fotony dod\u00e1vaj\u00ed elektron\u016fm energii pot\u0159ebnou k opu\u0161t\u011bn\u00ed plovouc\u00ed br\u00e1ny. Pro umo\u017en\u011bn\u00ed pr\u016fniku ultrafialov\u00e9ho sv\u011btla do hloubky \u010dipu bylo na sk\u0159\u00ed\u0148ku p\u0159id\u00e1no k\u0159emenn\u00e9 sklo.<\/p>\n<p><noindex><a rel=\"nofollow\" href=\"https:\/\/newsroom.intel.com\/news\/intel-50-qa-intels-dov-frohman-inventor-eprom\/#gs.wum63d\"><img decoding=\"async\" alt=\"\u00davod do SSD. \u010cas\u0165 4. Fyzick\u00e1\" src=\"\/wp-content\/uploads\/2020\/03\/725b3ed07b0a5c5ceb285f6b7e234f08.png\" style=\"display:block;margin: 0 auto;\" \/><\/a><\/noindex><\/p>\n<blockquote><p>Frohman poprv\u00e9 p\u0159edstavil sv\u016fj prototyp EPROM v \u00fanoru 1971 na konferenci o pevn\u00fdch integrovan\u00fdch obvodech ve Filadelfii. Gordon Moore vzpom\u00ednal na demonstraci: \u201eDov p\u0159edvedl bitov\u00fd vzor v pam\u011b\u0165ov\u00fdch bu\u0148k\u00e1ch EPROM. Kdy\u017e na bu\u0148ky p\u016fsobilo ultrafialov\u00e9 sv\u011btlo, bity mizely jeden po druh\u00e9m, dokud se nevymazalo nezn\u00e1m\u00e9 logo Intelu. ... Bity zmizely, a kdy\u017e posledn\u00ed zmizel, cel\u00e9 publikum propuklo v potlesk. Dova \u010dl\u00e1nku byla uzn\u00e1na za nejlep\u0161\u00ed na konferenci.\u201c<i> \u2014 P\u0159eklad \u010dl\u00e1nku <noindex><a rel=\"nofollow\" href=\"https:\/\/newsroom.intel.com\/news\/intel-at-50-erasable-programmable-read-only-memory\">newsroom.intel.com<\/a><\/noindex><\/i><\/p><\/blockquote>\n<p>EPROM pam\u00e4\u0165 je drah\u0161ia ne\u017e predt\u00fdm pou\u017e\u00edvan\u00e9 jednorazov\u00e9 pam\u00e4\u0165ov\u00e9 zariadenia (PZM), av\u0161ak mo\u017enos\u0165 preprogramovania umo\u017e\u0148uje r\u00fdchlej\u0161iu ladenie obvodov a skr\u00e1tenie \u010dasu potrebn\u00e9ho na v\u00fdvoj nov\u00e9ho hardv\u00e9ru.<\/p>\n<p>Preprogramovanie PZM ultrafialov\u00fdm svetlom bolo v\u00fdznamn\u00fdm pokrokom, av\u0161ak my\u0161lienka elektrick\u00e9ho prep\u00edsania u\u017e \u201eve\u0161tila\u201c vo vzduchu.<\/p>\n<h3>Elektricky vymazate\u013en\u00e1 programovate\u013en\u00e1 pam\u00e4\u0165 iba na \u010d\u00edtanie<\/h3>\n<p>\nV roku 1972 predstavili traja Japonci: Yasuo Tarui, Yutaka Hayashi a Kiyoko Nagai prv\u00e9 elektricky vymazate\u013en\u00e9 pam\u00e4\u0165ov\u00e9 zariadenie (Elektricky vymazate\u013en\u00e1 programovate\u013en\u00e1 pam\u00e4\u0165 iba na \u010d\u00edtanie, EEPROM alebo E2PROM). N\u00e1sledne sa ich vedeck\u00e9 v\u00fdskumy stali s\u00fa\u010das\u0165ou patentov na komer\u010dn\u00e9 realiz\u00e1cie EEPROM pam\u00e4te.<\/p>\n<p>Ka\u017ed\u00e1 bunka EEPROM pam\u00e4te sa sklad\u00e1 z nieko\u013ek\u00fdch tranzistorov:<\/p>\n<ul>\n<li>tranzistor s pl\u00e1vaj\u00facou br\u00e1nou na ulo\u017eenie bitu;<\/li>\n<li>tranzistor na riadenie re\u017eimu \u010d\u00edtania a z\u00e1pisu.<\/li>\n<\/ul>\n<p>\nT\u00e1to kon\u0161trukcia zna\u010dne komplikuje zapojenie elektrick\u00fdch obvodov, preto sa EEPROM pam\u00e4\u0165 pou\u017e\u00edvala v pr\u00edpadoch, ke\u010f nebol minim\u00e1lny objem pam\u00e4te kritick\u00fd. Na ukladanie ve\u013ek\u00e9ho objemu d\u00e1t sa na\u010falej pou\u017e\u00edvala EPROM.<\/p>\n<h3>Flash pam\u00e4\u0165<\/h3>\n<p>\nFlash pam\u00e4\u0165, kombinuje najlep\u0161ie vlastnosti EPROM a EEPROM, bola vyvinut\u00e1 japonsk\u00fdm profesorom Fujio Masuokou, in\u017einierom spolo\u010dnosti Toshiba, v roku 1980. Prv\u00fd n\u00e1vrh dostal n\u00e1zov Flash pam\u00e4\u0165 typu NOR a, rovnako ako jej predchodcovia, je zalo\u017een\u00e1 na po\u013en\u00fdch MOS tranzistoroch s pl\u00e1vaj\u00facou br\u00e1nou.<\/p>\n<p><img decoding=\"async\" alt=\"\u00davod do SSD. \u010cas\u0165 4. Fyzick\u00e1\" src=\"\/wp-content\/uploads\/2020\/03\/afb642e62142301a0430736f88a747a9.png\" style=\"display:block;margin: 0 auto;\" \/><br \/>\nFlash pam\u00e4\u0165 typu NOR je dvojrozsahov\u00e1 mrie\u017eka tranzistorov. Br\u00e1ny tranzistorov s\u00fa pripojen\u00e9 k l\u00ednii slov, a zdroje s\u00fa pripojen\u00e9 k l\u00ednii bitov. Pri priveden\u00ed nap\u00e4tia na l\u00edniu slov sa tranzistory, ktor\u00e9 obsahuj\u00fa elektr\u00f3ny, teda uchov\u00e1vaj\u00face \u201ejednotku\u201c, neotvoria a pr\u00fad nebude tiec\u0165. Na z\u00e1klade pr\u00edtomnosti alebo nepr\u00edtomnosti pr\u00fadu na l\u00ednii bitov sa ur\u010duje hodnota bitu.<\/p>\n<p><img decoding=\"async\" alt=\"\u00davod do SSD. \u010cas\u0165 4. Fyzick\u00e1\" src=\"\/wp-content\/uploads\/2020\/03\/53a8762b0e7cec9b6ebdf5fb91e9b328.png\" style=\"display:block;margin: 0 auto;\" \/><br \/>\nPo siedmich rokoch Fujio Masuoka vyvinul Flash pam\u00e4\u0165 typu NAND. Tento typ pam\u00e4te sa l\u00ed\u0161i po\u010dtom tranzistorov na bitovej l\u00ednii. V pam\u00e4ti typu NOR je ka\u017ed\u00fd tranzistor priamo pripojen\u00fd k bitovej l\u00ednii, zatia\u013e \u010do v NAND pam\u00e4ti s\u00fa tranzistory pripojen\u00e9 s\u00e9riovo.<\/p>\n<p><img decoding=\"async\" alt=\"\u00davod do SSD. \u010cas\u0165 4. Fyzick\u00e1\" src=\"\/wp-content\/uploads\/2020\/03\/14db892a94f6bf36fe3f9dc8f5ad76c3.png\" style=\"display:block;margin: 0 auto;\" \/><br \/>\n\u010c\u00edtanie z pam\u00e4te takejto konfigur\u00e1cie je zlo\u017eitej\u0161ie: na potrebn\u00fa linku slova je aplikovan\u00e9 nap\u00e4tie potrebn\u00e9 na \u010d\u00edtanie, a na v\u0161etky ostatn\u00e9 linky slova je aplikovan\u00e9 nap\u00e4tie, ktor\u00e9 otv\u00e1ra tranzistor bez oh\u013eadu na \u00farove\u0148 n\u00e1boja v \u0148om. Ke\u010f\u017ee v\u0161etky ostatn\u00e9 tranzistory s\u00fa zaru\u010dene otvoren\u00e9, pr\u00edtomnos\u0165 nap\u00e4tia na bitovej linke z\u00e1vis\u00ed len od jedin\u00e9ho tranzistora, na ktor\u00fd je aplikovan\u00e9 \u010d\u00edtacie nap\u00e4tie.<\/p>\n<p>Vyn\u00e1lez Flash pam\u00e4te typu NAND umo\u017e\u0148uje v\u00fdrazne zhu\u0161\u0165ova\u0165 sch\u00e9mu, pri\u010dom sa umiest\u0148uje v\u00e4\u010d\u0161\u00ed objem pam\u00e4te pri t\u00fdch ist\u00fdch rozmeroch. A\u017e do roku 2007 bol objem pam\u00e4te zvy\u0161ovan\u00fd zmen\u0161ovan\u00edm v\u00fdrobn\u00e9ho technologick\u00e9ho procesu \u010dipu.<\/p>\n<p>V roku 2007 spolo\u010dnos\u0165 Toshiba predstavila nov\u00fa verziu NAND pam\u00e4te: <b>Vertik\u00e1lna NAND (V-NAND)<\/b>, tie\u017e zn\u00e1ma ako <b>3D NAND<\/b>. V tejto technol\u00f3gii sa kladie d\u00f4raz na umiestnenie tranzistorov do viacer\u00fdch vrstiev, \u010do op\u00e4\u0165 umo\u017e\u0148uje zhu\u0161\u0165ovanie sch\u00e9my a zvy\u0161ovanie objemu pam\u00e4te. Napriek tomu zhu\u0161\u0165ovanie sch\u00e9my nem\u00f4\u017ee pokra\u010dova\u0165 do nekone\u010dna, preto sa sk\u00famali aj in\u00e9 met\u00f3dy na zvy\u0161ovanie ulo\u017een\u00e9ho objemu pam\u00e4te.<\/p>\n<p><img decoding=\"async\" alt=\"\u00davod do SSD. \u010cas\u0165 4. Fyzick\u00e1\" src=\"\/wp-content\/uploads\/2020\/03\/11bbf1b13a91ae464c305fac941218ec.png\" style=\"display:block;margin: 0 auto;\" \/><br \/>\nP\u00f4vodne ka\u017ed\u00fd tranzistor uchov\u00e1val dve \u00farovne n\u00e1boja: logick\u00fa nulu a logick\u00fa jednotku. Tento pr\u00edstup sa naz\u00fdva <b>Single-Level Cell (SLC)<\/b>. \u00dalo\u017eisk\u00e1 s touto technol\u00f3giou sa vyzna\u010duj\u00fa vysokou spo\u013eahlivos\u0165ou a maxim\u00e1lnym po\u010dtom cyklov prepisu.<\/p>\n<p>V priebehu \u010dasu sa prijalo rozhodnutie zv\u00fd\u0161i\u0165 objem \u00falo\u017e\u00edsk na \u00fakor odolnosti vo\u010di opotrebovaniu. Tak sa po\u010det \u00farovn\u00ed n\u00e1boja v bunke zv\u00fd\u0161il na \u0161tyri a technol\u00f3gia bola nazvan\u00e1 <b>Multi-Level Cell (MLC)<\/b>. N\u00e1sledne sa objavili <b>Triple-Level Cell (TLC)<\/b> a <b>Quad-Level Cell (QLC)<\/b>. V bud\u00facnosti sa objav\u00ed nov\u00fd \u00farove\u0148 \u2014 <b>Penta-Level Cell (PLC)<\/b> s piatimi bitmi v jednej bunke. \u010c\u00edm viac bitov sa zmest\u00ed do jednej bunky, t\u00fdm v\u00e4\u010d\u0161\u00ed objem \u00falo\u017eiska pri tej istej cene, ale men\u0161ia odolnos\u0165 vo\u010di opotrebovaniu.<\/p>\n<p>Zhu\u0161\u0165ovanie sch\u00e9my zmen\u0161ovan\u00edm technologick\u00e9ho procesu a zvy\u0161ovan\u00edm po\u010dtu bitov v jednom tranzistore negat\u00edvne ovplyv\u0148uje uchov\u00e1van\u00e9 d\u00e1ta. Napriek tomu, \u017ee v EPROM a EEPROM sa pou\u017e\u00edvaj\u00fa tie ist\u00e9 tranzistory, EPROM a EEPROM dok\u00e1\u017eu uchov\u00e1va\u0165 d\u00e1ta bez nap\u00e1jania desa\u0165 rokov, zatia\u013e \u010do modern\u00e1 Flash pam\u00e4\u0165 m\u00f4\u017ee v\u0161etko \"zabudn\u00fa\u0165\" u\u017e po roku.<\/p>\n<blockquote><p>Pou\u017eitie Flash pam\u00e4te v kozmickom priemysle je problematick\u00e9, preto\u017ee radi\u00e1cia m\u00e1 neblah\u00fd vplyv na elektr\u00f3ny v pl\u00e1vaj\u00facich z\u00e1tkach.<\/p><\/blockquote>\n<p>Uveden\u00e9 probl\u00e9my br\u00e1nia Flash pam\u00e4ti sta\u0165 sa nepopierate\u013en\u00fdm l\u00eddrom v oblasti ukladania inform\u00e1ci\u00ed. Hoci s\u00fa zariadenia zalo\u017een\u00e9 na Flash pam\u00e4ti \u0161iroko roz\u0161\u00edren\u00e9, prebiehaj\u00fa v\u00fdskumy in\u00fdch typov pam\u00e4t\u00ed, ktor\u00e9 nemaj\u00fa tieto nev\u00fdhody, medzi ktor\u00e9 patr\u00ed ukladanie inform\u00e1ci\u00ed v magnetick\u00fdch momentoch a f\u00e1zov\u00fdch stavoch.<\/p>\n<h2>Magnetorezist\u00edvna pam\u00e4\u0165<\/h2>\n<p>\n<noindex><a rel=\"nofollow\" href=\"https:\/\/www.youtube.com\/watch?v=lne8r2mIwuA\"><img decoding=\"async\" alt=\"\u00davod do SSD. \u010cas\u0165 4. Fyzick\u00e1\" src=\"\/wp-content\/uploads\/2020\/03\/12ad7d4ed598506d78199c56e91a3831.png\" style=\"display:block;margin: 0 auto;\" \/><\/a><\/noindex><br \/>\nK\u00f3dovanie inform\u00e1ci\u00ed magnetick\u00fdmi momentmi sa objavilo v roku 1955 v podobe pam\u00e4te na magnetick\u00fdch jadr\u00e1ch. Do polovice 70. rokov 20. storo\u010dia bola feritov\u00e1 pam\u00e4\u0165 hlavnou formou pam\u00e4ti. \u010c\u00edtanie bitu z tejto pam\u00e4te viedlo k demagnetiz\u00e1cii prstenca a strate inform\u00e1ci\u00ed. Tak\u017ee po pre\u010d\u00edtan\u00ed bitu bolo potrebn\u00e9 ho zap\u00edsa\u0165 sp\u00e4\u0165.<\/p>\n<p>V modern\u00fdch v\u00fdvojoch magnetorezist\u00edvnej pam\u00e4te sa namiesto prstencov pou\u017e\u00edvaj\u00fa dva vrstvy ferromagnetika, oddelen\u00e9 dielektrikom. Jedna vrstva je trval\u00fd magnet a druh\u00e1 men\u00ed smer magnetiz\u00e1cie. \u010c\u00edtanie bitu z takejto bunky sa zni\u017euje na meranie odporu pri prechode pr\u00fadu: ak s\u00fa vrstvy magnetizovan\u00e9 v opa\u010dn\u00fdch smeroch, odpor je v\u00e4\u010d\u0161\u00ed a to je ekvivalentn\u00e9 hodnote \u201e1\u201c.<\/p>\n<p>Feritov\u00e1 pam\u00e4\u0165 si nevy\u017eaduje trval\u00fd zdroj energie na udr\u017eanie zap\u00edsan\u00fdch inform\u00e1ci\u00ed, av\u0161ak magnetick\u00e9 pole bunky m\u00f4\u017ee ovplyvni\u0165 \u201esuseda\u201c, \u010do kladie obmedzenie na zhu\u0161\u0165ovanie sch\u00e9my.<\/p>\n<blockquote><p>Pod\u013ea <noindex><a rel=\"nofollow\" href=\"https:\/\/www.jedec.org\/sites\/default\/files\/Alvin_Cox%20%5BCompatibility%20Mode%5D_0.pdf\">JEDEC<\/a><\/noindex> SSD disky zalo\u017een\u00e9 na Flash pam\u00e4ti by mali uchov\u00e1va\u0165 inform\u00e1cie minim\u00e1lne tri mesiace pri teplote 40 \u00b0C bez nap\u00e1jania. Chippa navrhnut\u00e1 spolo\u010dnos\u0165ou Intel <noindex><a rel=\"nofollow\" href=\"https:\/\/3dnews.ru\/983125\">na b\u00e1ze magnetorezist\u00edvnej pam\u00e4ti<\/a><\/noindex> s\u013eubuje zachova\u0165 d\u00e1ta desa\u0165 rokov pri teplote 200 \u00b0C.<\/p><\/blockquote>\n<p>Napriek slo\u017eitosti v\u00fdvoja magnetorezist\u00edvna pam\u00e4\u0165 sa po\u010das pou\u017e\u00edvania nedegeneruje a m\u00e1 lep\u0161\u00ed v\u00fdkon medzi ostatn\u00fdmi typmi pam\u00e4t\u00ed, tak\u017ee tento typ pam\u00e4te nemo\u017eno podceni\u0165.<\/p>\n<h2>Pam\u00e4\u0165 s f\u00e1zovou zmenou<\/h2>\n<p>\nTret\u00ed perspekt\u00edvny typ pam\u00e4te \u2014 pam\u00e4\u0165 na b\u00e1ze f\u00e1zov\u00e9ho prechodu. Tento typ pam\u00e4te vyu\u017e\u00edva vlastnosti chalogenidov prepn\u00fa\u0165 medzi kry\u0161talick\u00fdm a amorfn\u00fdm stavom pri zahriat\u00ed.<\/p>\n<blockquote><p><b>Chalogenidy<\/b> \u2014 bin\u00e1rne spojenia kovov so 16. skupinou (6. skupinou hlavnej podskupiny) periodickej tabu\u013eky Mendelejeva. Napr\u00edklad, v CD-RW, DVD-RW, DVD-RAM a Blu-ray diskoch sa pou\u017e\u00edvaj\u00fa telurid germ\u00e1nia (GeTe) a telurid antimonu (III) (Sb2Te3).<\/p><\/blockquote>\n<p>V\u00fdskumy aplik\u00e1ci\u00ed f\u00e1zov\u00e9ho prechodu na uchov\u00e1vanie inform\u00e1ci\u00ed sa uskuto\u010dnili v <b>1960-tych<\/b> rokoch Stanforom Ovshinsk\u00fdm (Stanford Ovshinsky), ale dovtedy sa komer\u010dn\u00e1 realiz\u00e1cia nedosiahla. V 2000-\u00fdch sa op\u00e4\u0165 obnovil z\u00e1ujem o technol\u00f3giu, Samsung patentoval technol\u00f3giu umo\u017e\u0148uj\u00facu prep\u00edna\u0165 bit za 5 ns, zatia\u013e \u010do Intel a STMicroelectronics zv\u00fd\u0161ili po\u010det stavov na \u0161tyri, \u010d\u00edm zdvojn\u00e1sobili mo\u017en\u00fd objem.<\/p>\n<p>Pri ohreve nad bodom tavenia chalcogenid str\u00e1ca kry\u0161talick\u00fa \u0161trukt\u00faru a pri ochladzovan\u00ed sa men\u00ed na amorfn\u00fa formu, ktor\u00e1 sa vyzna\u010duje vysok\u00fdm elektrick\u00fdm odporom. Na druhej strane, pri ohreve na teplotu nad bodom kry\u0161taliz\u00e1cie, ale pod bodom tavenia, sa chalcogenid vracia do kry\u0161talick\u00e9ho stavu s n\u00edzkou \u00farov\u0148ou odporu.<\/p>\n<p>Pam\u00e4\u0165 s f\u00e1zov\u00fdm prechodom nevy\u017eaduje 'dob\u00edjanie' priebe\u017ene, ako aj nie je citliv\u00e1 na radi\u00e1ciu, na rozdiel od pam\u00e4te na elektrick\u00fdch n\u00e1bojoch. Tento typ pam\u00e4te m\u00f4\u017ee uchov\u00e1va\u0165 inform\u00e1cie po\u010das 300 rokov pri teplote 85 \u00b0C.<\/p>\n<p>Pova\u017euje sa, \u017ee v\u00fdvoj spolo\u010dnosti Intel, technol\u00f3gia <b>3D Crosspoint (3D XPoint)<\/b> pou\u017e\u00edva presne f\u00e1zov\u00e9 prechody na ulo\u017eenie inform\u00e1ci\u00ed. 3D XPoint sa vyu\u017e\u00edva v pam\u00e4\u0165ov\u00fdch jednotk\u00e1ch Intel&reg; Optane&trade; Memory, pre ktor\u00e9 sa uv\u00e1dza vysok\u00e1 odolnos\u0165 proti opotrebeniu.<\/p>\n<h2>Z\u00e1ver<\/h2>\n<p>\nFyzick\u00e9 zariadenie solid-state diskov pre\u0161lo mnoh\u00fdmi zmenami za viac ne\u017e polstoro\u010dn\u00fa hist\u00f3riu, no ka\u017ed\u00e9 z rie\u0161en\u00ed m\u00e1 svoje nev\u00fdhody. Napriek nepopierate\u013enej popularite Flash pam\u00e4te nieko\u013eko spolo\u010dnost\u00ed, medzi ktor\u00fdmi sa nach\u00e1dzaj\u00fa Samsung a Intel, pracuje na mo\u017enosti vytvorenia pam\u00e4te na magnetick\u00fdch momentoch.<\/p>\n<p>Zn\u00ed\u017eenie opotrebovania buniek, ich zhutnenie a zv\u00fd\u0161enie celkovej kapacity \u00falo\u017eiska \u2014 to s\u00fa smery, ktor\u00e9 s\u00fa teraz perspekt\u00edvne pre \u010fal\u0161\u00ed rozvoj solid-state diskov.<\/p>\n<blockquote><p>M\u00f4\u017eete u\u017e teraz otestova\u0165 tie najlep\u0161ie aktu\u00e1lne \u00falo\u017eisk\u00e1 NAND a 3D XPoint v na\u0161ej <noindex><a rel=\"nofollow\" href=\"http:\/\/slc.tl\/S-MoX\">Selectel LAB<\/a><\/noindex>.<\/p><\/blockquote>\n<p>Ako si mysl\u00edte, vystriedaj\u00fa technol\u00f3gie ukladania inform\u00e1ci\u00ed na elektrick\u00fdch n\u00e1bojoch in\u00e9, napr\u00edklad kremenn\u00e9 disky alebo optick\u00e1 pam\u00e4\u0165 na nanokry\u0161t\u00e1loch soli?<br \/>\n<br \/>Zdroj: <a content=\"nofollow\" rel=\"nofollow\" href=\"https:\/\/habr.com\/ru\/company\/selectel\/blog\/491264\/\">habr.com<\/a> <\/p>","protected":false,"gt_translate_keys":[{"key":"rendered","format":"html"}]},"excerpt":{"rendered":"<p>\u041f\u0440\u043e\u0448\u043b\u044b\u0435 \u0447\u0430\u0441\u0442\u0438 \u0446\u0438\u043a\u043b\u0430 \u00ab\u0412\u0432\u0435\u0434\u0435\u043d\u0438\u0435 \u0432 SSD\u00bb \u043f\u043e\u0432\u0435\u0434\u0430\u043b\u0438 \u0447\u0438\u0442\u0430\u0442\u0435\u043b\u044e \u043f\u0440\u043e \u0438\u0441\u0442\u043e\u0440\u0438\u044e \u043f\u043e\u044f\u0432\u043b\u0435\u043d\u0438\u044f SSD-\u043d\u0430\u043a\u043e\u043f\u0438\u0442\u0435\u043b\u0435\u0439, \u0438\u043d\u0442\u0435\u0440\u0444\u0435\u0439\u0441\u044b \u0432\u0437\u0430\u0438\u043c\u043e\u0434\u0435\u0439\u0441\u0442\u0432\u0438\u044f \u0441 \u043d\u0438\u043c\u0438 \u0438 \u043f\u043e\u043f\u0443\u043b\u044f\u0440\u043d\u044b\u0435 \u0444\u043e\u0440\u043c-\u0444\u0430\u043a\u0442\u043e\u0440\u044b. \u0427\u0435\u0442\u0432\u0451\u0440\u0442\u0430\u044f \u0447\u0430\u0441\u0442\u044c \u0440\u0430\u0441\u0441\u043a\u0430\u0436\u0435\u0442 \u043e \u0445\u0440\u0430\u043d\u0435\u043d\u0438\u0438 \u0434\u0430\u043d\u043d\u044b\u0445 \u0432\u043d\u0443\u0442\u0440\u0438 \u043d\u0430\u043a\u043e\u043f\u0438\u0442\u0435\u043b\u0435\u0439. \u0412 \u043f\u0440\u0435\u0434\u044b\u0434\u0443\u0449\u0438\u0445 \u0441\u0442\u0430\u0442\u044c\u044f\u0445 \u0446\u0438\u043a\u043b\u0430: \u0418\u0441\u0442\u043e\u0440\u0438\u044f \u0441\u043e\u0437\u0434\u0430\u043d\u0438\u044f HDD \u0438 SSD \u0412\u043e\u0437\u043d\u0438\u043a\u043d\u043e\u0432\u0435\u043d\u0438\u0435 \u0438\u043d\u0442\u0435\u0440\u0444\u0435\u0439\u0441\u043e\u0432 \u043d\u0430\u043a\u043e\u043f\u0438\u0442\u0435\u043b\u0435\u0439 \u041e\u0441\u043e\u0431\u0435\u043d\u043d\u043e\u0441\u0442\u0438 \u0444\u043e\u0440\u043c-\u0444\u0430\u043a\u0442\u043e\u0440\u043e\u0432 \u0425\u0440\u0430\u043d\u0435\u043d\u0438\u0435 \u0434\u0430\u043d\u043d\u044b\u0445 \u0432 \u0442\u0432\u0435\u0440\u0434\u043e\u0442\u0435\u043b\u044c\u043d\u044b\u0445 \u043d\u0430\u043a\u043e\u043f\u0438\u0442\u0435\u043b\u044f\u0445 \u043c\u043e\u0436\u043d\u043e \u0440\u0430\u0437\u0434\u0435\u043b\u0438\u0442\u044c \u043d\u0430 \u0434\u0432\u0435 \u043b\u043e\u0433\u0438\u0447\u0435\u0441\u043a\u0438\u0435 \u0447\u0430\u0441\u0442\u0438: \u0445\u0440\u0430\u043d\u0435\u043d\u0438\u0435 \u0438\u043d\u0444\u043e\u0440\u043c\u0430\u0446\u0438\u0438 \u0432 [&hellip;]<\/p>\n","protected":false,"gt_translate_keys":[{"key":"rendered","format":"html"}]},"author":1,"featured_media":73398,"comment_status":"open","ping_status":"open","sticky":false,"template":"","format":"standard","meta":{"footnotes":""},"categories":[688],"tags":[],"class_list":["post-73397","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-administrirovanie"],"aioseo_notices":[],"aioseo_head":"\n\t\t<!-- All in One SEO 5.0.4 - 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