Sezvatinoziva, muna Kurume wegore rino, TSMC yakatanga kutyaira kugadzirwa kwe5nm zvigadzirwa. Izvi zvakaitika pachirimwa chitsva cheFab 18 muTaiwan, yekuburitswa kwe5nm mhinduro. Kugadzira misa uchishandisa iyo 5nm N5 maitiro inotarisirwa muchikamu chechipiri che2020. Pakupera kwegore rimwe chetero, kugadzirwa kwemachipisi kwakavakirwa pakugadzira 5-nm process tekinoroji kana N5P (kuita) kuchatangwa. Kuwanikwa kweprototype machipisi kunobvumira TSMC kuti iongorore kugona kweamangwana semiconductors anogadzirwa zvichibva pane itsva process tekinoroji, iyo kambani ichataura nezvayo zvakadzama muna Zvita. Asi iwe unogona kutoziva chimwe chinhu kubva pazvinyorwa zvakaunzwa neTSMC kuti zvionekwe paIEDM 2019.
Tisati tajekesa ruzivo, ngatirangarirei zvatinoziva kubva pane zvakapfuura zvirevo kubva kuTSMC. Kuenzaniswa ne7nm maitiro, zvinonzi mambure e5nm machipisi achawedzera ne15% kana kushandiswa kuchaderedzwa ne30% kana kuita kwakaramba kwakafanana. Iyo N5P maitiro ichawedzera imwe 7% kugadzirwa kana 15% yekuchengetedza mukushandisa. Kuwanda kwezvinhu zvinonzwisisika kuchawedzera ne1,8 nguva. Iyo SRAM cell chiyero ichachinja nechikamu che 0,75.
Mukugadzirwa kwe5nm machipisi, chiyero chekushandiswa kweEUV ββscanner chinosvika padanho rekugadzira. Iyo transistor chiteshi chimiro ichashandurwa, pamwe nekushandisa germanium pamwe chete kana panzvimbo yesilicon. Izvi zvichava nechokwadi chekuwedzera kufamba kwemaerekitironi muchiteshi uye kuwedzera kwemhepo. Iyo tekinoroji tekinoroji inopa akati wandei ekudzora magetsi mazinga, iyo yepamusoro-soro ichapa 25% yekuwedzera kwekuita kana ichienzaniswa neiyo yakafanana mu7 nm process tekinoroji. Iyo transistor magetsi ekupa iyo I / O interfaces ichabva pa1,5 V kusvika 1,2 V.
Mukugadzira kuburikidza nemaburi emetalization uye kune vanobatika, zvinhu zvine kunyange kuderera kushomeka zvichashandiswa. I-ultra-high-density capacitors ichagadzirwa uchishandisa simbi-dielectric-metal circuit, iyo inowedzera kubudirira ne4%. Kazhinji, TSMC ichachinja kushandisa nyowani yakaderera-K insulators. Iyo nyowani "yakaoma" maitiro, Metal Reactive Ion Etching (RIE), ichaonekwa mune silicon wafer processing circuit, iyo inozotora chikamu kutsiva yechinyakare Dhamasiko maitiro uchishandisa mhangura (yesimbi inobatana idiki pane 30 nm). Uyewo kekutanga, girafu yegraphene ichashandiswa kugadzira chipingamupinyi pakati pemhangura conductors uye semiconductor (kudzivirira electromigration).
Kubva mumagwaro emushumo waZvita kuIEDM, tinogona kunhonga kuti akati wandei maparamita e5nm machipisi anotove nani. Nekudaro, iyo density yezvinhu zvinonzwisisika ichave yakakwirira uye inosvika 1,84 nguva. Iyo SRAM sero ichavewo idiki, ine nzvimbo ye0,021 Β΅m2. Zvinhu zvose zvakarongeka nekushanda kwesilicon yekuedza - kuwedzera kwe15% kwakawanikwa, pamwe nekuderedza kushandiswa kwe30% mukushandiswa kwechando chepamusoro.
Iyo nyowani tekinoroji tekinoroji ichaita kuti zvikwanise kusarudza kubva kunomwe control voltage values, izvo zvichawedzera siyana kune yekuvandudza maitiro uye zvigadzirwa, uye kushandiswa kweEUV ββscanner kunonyatso kurerutsa kugadzirwa uye kuita kuti idhure. Sekureva kweTSMC, kuchinjira kuEUV scanner inopa kuvandudzwa kwe0,73x mukugadziriswa kwemutsara uchienzaniswa ne7nm maitiro. Semuyenzaniso, kugadzira akanyanya kuomarara metallization akaturikidzana ekutanga, panzvimbo yemasiki mashanu akajairwa, chete EUV mask inodiwa uye, maererano, imwe chete yekugadzira kutenderera panzvimbo yeshanu. Nenzira, tarisa kuti zvakachena sei zvinhu pa chip zvinobuda kana uchishandisa EUV fungidziro. Runako, uye ndizvo chete.
Source: 3dnews.ru