Zvikamu zvakapfuura zve "Sumo kuSSD" yakatevedzana yakaudza muverengi nezve nhoroondo yekubuda kweSSD madhiraivha, nzvimbo dzekupindirana navo, uye zvakakurumbira mafomu zvinhu. Chikamu chechina chichataura nezve kuchengetedza data mukati medhiraivha.
Muzvinyorwa zvakapfuura munhevedzano:
Kuchengetera dhata mune yakasimba-nyika dhiraivha inogona kukamurwa kuita zvikamu zviviri zvine musoro: kuchengetedza ruzivo mune imwe sero uye kuronga kuchengetwa kwesero.
Sero rega rega rezvitoro zvine solid state drive chimwe kana zvimwe zvimedu zveruzivo. Mhando dzakasiyana dzeruzivo dzinoshandiswa kuchengetedza ruzivo. maitiro emuviri. Paunenge uchigadzira solid-state dhiraivha, hunotevera huwandu hwemuviri hwakatariswa kune encoding ruzivo:
- mari yemagetsi (kusanganisira Flash memory);
- magineti nguva (magnetoresistive ndangariro);
- phase states (ndangariro ine shanduko muchikamu chechimiro).
Memory yakavakirwa pamachaji emagetsi
Encoding ruzivo uchishandisa kubhadharisa kwakashata kunotsigira akati wandei mhinduro:
- ultraviolet erasable ROM (EPROM);
- ROM inodzimwa nemagetsi (EEPROM);
- Flash memory.
Imwe neimwe sero yekurangarira iri gedhi rinoyangarara MOSFET, iyo inochengetedza mhosva yakaipa. Musiyano wayo kubva kune yakajairika MOS transistor kuvepo kwegedhi rinoyangarara - kondakita mune dielectric layer.
Kana mutsauko ungave wagadzirwa pakati pedhiraini uye sosi uye paine mukana wakanaka pasuwo, ikozvino inoyerera ichibva kutsime kuenda kumvura. Zvisinei, kana paine musiyano wakakura wakakura wakakwana, mamwe maerekitironi “anopaza” dielectric layer uye anoguma apinda pagedhi rinoyangarara. Chiitiko ichi chinonzi .
Gedhi rinoyangarara rakavharwa zvisina kunaka rinogadzira munda wemagetsi unodzivirira kuyerera kubva kutsime kuenda kumvura. Uyezve, kuvapo kwemaerekitironi mugedhi rinoyangarara kunowedzera simba repachikumbaridzo panobatidzwa transistor. Ne "nyora" yega yega kugedhi rinoyangarara re transistor, iyo dielectric layer yakakuvadzwa zvishoma, iyo inoisa muganho pahuwandu hwekunyorazve kutenderera kwesero rega rega.
Anoyangarara-gedhi MOSFETs akagadzirwa naDawon Kahng naSimon Min Sze kuBell Labs muna 1967. Gare gare, pakudzidza kukanganisa mumasekete akabatanidzwa, zvakaonekwa kuti nekuda kwekubhadharisa mugedhi rinoyangarara, chikumbaridzo chemagetsi chinovhura transistor chakachinja. Kuwanikwa uku kwakaita kuti Dov Frohman atange kushanda pandangariro zvichibva pachiitiko ichi.
Kuchinja chikumbaridzo voltage kunokubvumira "kuronga" ma transistors. Anoyangarara gedhi transistors haazobatiki kana gedhi voltage yakakura kupfuura chikumbaridzo voltage nokuda transistor pasina maerekitironi, asi shoma pane chikumbaridzo voltage nokuda transistor ane maerekitironi. Ngatishevedze kukosha uku kuverenga voltage.
Erasable Programmable Read-Only Memory
Muna 1971, Intel mushandi Dov Frohman akagadzira transistor-based rewritable memory inonzi. Erasable Programmable Read-Only Memory (EPROM). Kurekodha muchirangaridzo kwakaitwa pachishandiswa chinhu chakakosha - mugadziri. Iyo programmer inoshandisa yakakwira voltage kune chip pane inoshandiswa mumaseketi edhijitari, nekudaro "inonyora" maerekitironi kumasuwo anoyangarara ematransistors pazvinoda.
EPROM ndangariro yakanga isina kuitirwa kuchenesa magedhi anoyangarara ematransistors nemagetsi. Pane kudaro, zvakarongwa kuti zviise pachena ma transistors kuchiedza chakasimba che ultraviolet, mafotoni ayo aizopa maerekitironi simba rinodiwa kutiza gedhi rinoyangarara. Kubvumira chiedza che ultraviolet kupinda mukati mukati me chip, girazi re quartz rakawedzerwa kune imba.
Froman akatanga kuratidza yake EPROM prototype muna Kukadzi 1971 pamusangano wakasimba weIC muPhiladelphia. Gordon Moore akayeuka kuratidzwa kwacho: "Dov airatidza iyo bit pateni mumaseru ekuyeuka eEPROM. Kana maseru akafumurwa kune ultraviolet mwenje, mabheti akanyangarika rimwe nerimwe kusvika isingazivikanwe Intel logo yadzimwa zvachose. … Mabhiti akanyangarika, uye apo wekupedzisira akanyangarika, vateereri vose vakaombera maoko. Chinyorwa chaDov chakaonekwa sechakanakisa pamusangano. " — Dudziro yechinyorwa
EPROM ndangariro inodhura kupfuura yakamboshandiswa "kurasa" kuverenga-chete memory (ROM) zvishandiso, asi kugona kuronga zvakare kunobvumidza iwe kugadzirisa maseketi nekukurumidza uye kuderedza nguva inotora kugadzira Hardware nyowani.
Kurongazve maROM ane ultraviolet mwenje kwaive budiriro yakakosha, zvisinei, pfungwa yekunyorazve magetsi yaive yatove mumhepo.
Magetsi Anodzimwa Programmable Read-Only Memory
Muna 1972, vatatu vekuJapan: Yasuo Tarui, Yutaka Hayashi naKiyoko Nagai vakaunza yekutanga kudzima nemagetsi kuverenga-chete memory (EEPROM kana E2PROM). Gare gare, tsvakiridzo yavo yesainzi ichave chikamu chematendi ekushandiswa kwekutengesa kweEEPROM memory.
Imwe neimwe EEPROM memory cell ine akati wandei transistors:
- inoyangarara gedhi transistor kuti bit kuchengetedza;
- transistor yekudzora kuverenga-kunyora maitiro.
Iyi dhizaini inoomesa zvakanyanya wiring yedunhu remagetsi, saka ndangariro yeEEPROM yakashandiswa mumamiriro ezvinhu apo kurangarira kushoma kwakanga kusingakoshi. EPROM yakanga ichiri kushandiswa kuchengetedza huwandu hwakawanda hwe data.
Flash memory
Flash memory, ichibatanidza zvakanakisa zveEPROM neEEPROM, yakagadziridzwa napurofesa wekuJapan Fujio Masuoka, injinjini kuToshiba, muna 1980. Yekutanga kusimudzira yainzi NOR Flash memory uye, seyakaitangira, yakavakirwa pane inoyangarara-gedhi MOSFETs.
NOR flash memory imbiri-dimensional array ye transistors. Magedhi e transistors akabatana nezwi mutsara, uye madhiraini akabatanidzwa kune bit line. Kana magetsi akaiswa kumutsara wezwi, ma transistors ane maerekitironi, ndiko kuti, kuchengetedza "imwe," haizovhurike uye ikozvino haizoyerere. Zvichienderana nekuvapo kana kusavapo kwezvino pane bit line, mhedziso inotorwa nezve kukosha kweiyo bit.
Makore manomwe gare gare, Fujio Masuoka akagadzira NAND Flash memory. Rudzi urwu rwendangariro rwunosiyana muhuwandu hwema transistors pane bit line. MuNOR ndangariro, imwe neimwe transistor yakabatana zvakananga kune diki mutsara, nepo muNAND ndangariro, iyo transistors yakabatana munhevedzano.
Kuverenga kubva muchiyeuchidzo chekugadzirisa uku kunonyanya kuoma: iyo voltage inodiwa pakuverenga inoshandiswa kune mutsara unodiwa wezwi, uye magetsi anoshandiswa kune mamwe mimwe mitsara yezwi, iyo inozarura transistor pasinei nehuwandu hwekubhadhara mariri. Sezvo mamwe ese ma transistors akavimbiswa kuvhurika, kuvepo kwevoltage pane bit line kunoenderana chete pane imwe transistor, iyo inoverengerwa voltage inoshandiswa.
Kugadzirwa kweNAND Flash memory kunoita kuti zvikwanise kumanikidza zvakanyanya dunhu, ichiisa ndangariro yakawanda muhukuru hwakafanana. Kusvika 2007, simba rekuyeuka rakawedzerwa nekudzikisa maitiro ekugadzira chip.
Muna 2007, Toshiba akaunza shanduro itsva yeNAND memory: Yakatwasuka NAND (V-NAND), inozivikanwawo se 3D NAND. Iyi tekinoroji inoisa simbiso pakuisa ma transistors muakawanda akaturikidzana, ayo zvakare anobvumira denser redunhu uye kuwedzera ndangariro kugona. Zvisinei, kusungirirwa kwedunhu hakugoni kudzokororwa nekusingaperi, saka dzimwe nzira dzakaongororwa kuti dziwedzere simba rekuchengetedza.
Pakutanga, transistor yega yega yaichengeta nhanho mbiri dzekuchaja: inonzwisisika zero uye inonzwisisika imwe. Iyi nzira inonzi Single-Level Cell (SLC). Madhiraivha ane tekinoroji iyi anovimbika zvakanyanya uye ane huwandu hwehuwandu hwekunyora patsva.
Nokufamba kwenguva, zvakasarudzwa kuwedzera simba rekuchengetedza pamutengo wekushomeka kwekupfeka. Saka nhamba yemazinga ekuchaja muchitokisi anosvika mana, uye tekinoroji yakadanwa Multi-Level Cell (MLC). Zvakatevera zvakauya Triple-Level Cell (TLC) и Quad-Level Cell (QLC). Pachave nedanho idzva mune ramangwana - Penta-Level Cell (PLC) nemabhiti mashanu pasero. Mabhiti akawanda anokwana musero rimwe chete, ndipo pakukura kwesimba rekuchengetedza pamutengo mumwe chete, asi kushoma kusakara.
Kubatana kwedunhu nekudzikisa hunyanzvi hwekuita uye kuwedzera huwandu hwebhiti mune imwe transistor kunokanganisa data rakachengetwa. Pasinei nokuti EPROM neEEPROM vanoshandisa ma transistors akafanana, EPROM neEEPROM vanogona kuchengeta data pasina simba kwemakore gumi, nepo Flash memory yemazuva ano inogona "kukanganwa" zvose mushure megore.
Kushandiswa kweFlash memory muindasitiri yemuchadenga kwakaoma nekuti mwaranzi ine simba rinokanganisa maerekitironi ari mumasuwo anoyangarara.
Aya matambudziko anodzivirira Flash memory kubva pakuva mutungamiri asina kupokana mumunda wekuchengetedza ruzivo. Kunyangwe idi rekuti madhiraivha akavakirwa paFlash memory akapararira, tsvakiridzo irikuenderera kune mamwe marudzi endangariro ayo asina zvipingamupinyi izvi, kusanganisira kuchengetedza ruzivo mune magineti nguva uye chikamu nyika.
Magnetoresistive memory
Encoding ruzivo ine magineti nguva yakaonekwa muna 1955 muchimiro chendangariro pane magineti cores. Kusvika pakati pe-1970s, ferrite memory yaive mhando huru yendangariro. Kuverenga zvishoma kubva kurudzi urwu rwendangariro kwakatungamira ku demagnetization yering uye kurasikirwa kweruzivo. Nokudaro, mushure mokuverenga zvishoma, yaifanira kunyorwa zvakare.
Mukuvandudzwa kwemazuva ano kwe magnetoresistive memory, panzvimbo yezvindori, zvikamu zviviri zveferromagnet zvinoshandiswa, zvakaparadzaniswa ne dielectric. Imwe layer ndeye magineti isingaperi, uye yechipiri inoshandura mafambiro emagnetization. Kuverenga zvishoma kubva musero rakadaro kunosvika pakuyera kupikisa kana uchipfuura ikozvino: kana zvidimbu zviine magineti mumativi akasiyana, saka kupikisa kwakakura uye izvi zvakaenzana nekukosha "1".
Ferrite ndangariro haidi simba rinogara riripo kuti richengetedze ruzivo rwakarekodhwa, zvisinei, iyo magnetic field yesero inogona kukanganisa "muvakidzani", iyo inoisa muganhu pane yedunhu compaction.
Maererano ne Madhiraivha eSSD anoenderana neFlash memory asina simba anofanirwa kuchengetedza ruzivo kweinenge mwedzi mitatu pane ambient tembiricha ye40°C. Yakagadzirwa naIntel inovimbisa kuchengetedza data kwemakore gumi pa200 ° C.
Pasinei nekuoma kwekusimudzira, magnetoresistive memory haidzikisi panguva yekushandiswa uye ine kushanda kwakanakisisa pakati pemamwe marudzi endangariro, izvo zvisingabvumiri rudzi urwu rwendangariro kunyorwa.
Phase shanduko ndangariro
Rudzi rwechitatu runovimbisa rwendangariro indangariro dzakavakirwa pakuchinja kwechikamu. Iyi mhando yendangariro inoshandisa zvimiro zvechalcogenides kushandura pakati pecrystalline uye amorphous states kana yapiswa.
Chalcogenides - mabhinari maumbirwo emasimbi ane 16th boka (6th boka reboka guru) reperiodic table. Semuenzaniso, CD-RW, DVD-RW, DVD-RAM uye Blu-ray discs anoshandisa germanium telluride (GeTe) uye antimony (III) telluride (Sb2Te3).
Tsvagiridzo yekushandiswa kwechikamu chekushandura kwekuchengetedza ruzivo yakaitwa mukati 1960s gore naStanford Ovshinsky, asi hazvina kuuya kune zvekutengesa kushandiswa. Mumakore ekuma2000, pakanga paine kufarira patsva mune tekinoroji, Samsung patented tekinoroji inobvumira bit switching mu5 ns, uye Intel neSTMicroelectronics yakawedzera huwandu hwematunhu kusvika ina, nekudaro ichipeta kaviri kugona.
Kana ichipisa pamusoro penzvimbo yakanyungudika, chalcogenide inorasikirwa nekristaro yayo chimiro uye, pakutonhora, inoshanduka kuita amorphous fomu inoratidzirwa nekukwirira kwemagetsi kuramba. Zvakare, kana ichipisa kune tembiricha pamusoro peiyo crystallization point, asi pazasi pekunyungudika, iyo chalcogenide inodzokera kune crystalline mamiriro ane yakaderera mwero wekupokana.
Phase shanduko ndangariro haidi "recharging" nekufamba kwenguva, uye hainawo kubatwa nemwaranzi, kusiyana nemagetsi anochajiswa ndangariro. Urwu rudzi rwendangariro runogona kuchengeta mashoko kwamakore 300 patembiricha ye85°C.
Zvinotendwa kuti kuvandudzwa kweIntel tekinoroji 3D Crosspoint (3D XPoint) Inoshandisa shanduko yechikamu kuchengetedza ruzivo. 3D XPoint inoshandiswa muIntel® Optane™ Memory drives, iyo inonzi ine kutsungirira kukuru.
mhedziso
Dhizaini yemuviri yeakasimba-nyika madhiraivha yakave neshanduko dzakawanda kupfuura inopfuura hafu yezana ramakore renhoroondo, zvisinei, imwe neimwe yemhinduro ine zvimhingamupinyi zvayo. Kunyangwe mukurumbira usingarambike weFlash memory, makambani akati wandei, kusanganisira Samsung neIntel, ari kuongorora mukana wekugadzira ndangariro zvichibva pane magineti nguva.
Kudzikisa kupfeka kwesero, kuabatanidza, uye kuwedzera huwandu hwese hwekutyaira inzvimbo dziri kuvimbisa pari zvino kusimudzira kusimudzira kwakasimba-nyika madhiraivha.
Unogona kuyedza yanhasi inotonhorera NAND uye 3D XPoint madhiraivha izvozvi mune yedu .
Iwe unofunga kuti matekinoroji ekuchengetedza ruzivo pamagetsi emagetsi achatsiviwa nevamwe, semuenzaniso, quartz disks kana optical memory pamunyu nanocrystals?
Source: www.habr.com