Shanduko kubva pasilicon kuenda kune semiconductors ine yakakura bandgap (gallium nitride, silicon carbide uye nevamwe) inogona kuwedzera zvakanyanya kushanda frequency uye kuvandudza kugona kwemhinduro. Naizvozvo, imwe yenzvimbo dzinovimbisa dzekushandiswa kwehupamhi-gap machipisi uye transistors ndeyekutaurirana uye radar. Electronics inobva paGaN mhinduro "kunze kwebhuruu" inopa kuwedzera kwesimba uye kuwedzera kwehuwandu hwemaradhi, iyo mauto akabva atora mukana.
Iyo kambani Lockheed Martin kuti ekutanga mobile radar units (radar) yakavakirwa pamagetsi ane zvinhu zvakagadzirwa negallium nitride akaunzwa kumauto eUS. Iyo kambani haina kuuya nechinhu chitsva. Iyo AN/TPQ-2010 counter-battery radars, yakagamuchirwa kubva 53, yakaendeswa kune iyo GaN element base. Iyi ndiyo yekutanga uye kusvika zvino ndiyo yega yakafara-gap semiconductor radar munyika.
Nekuchinja kune zvinoshanda zveGaN components, iyo AN/TPQ-53 radar yakawedzera kucherechedzwa kwenzvimbo dzakavharwa dzeArtillery uye yakawana kugona kutevedzera panguva imwe chete zvinotarwa nemhepo. Kunyanya, iyo AN/TPQ-53 radar yakatanga kushandiswa kurwisa drones, kusanganisira mota diki. Kuzivikanwa kwenzvimbo dzakafukidzwa dzeArtillery dzinogona kuitwa muchikamu che90-degree uye ine 360-dhigirii rose-kutenderera maonero.
Lockheed Martin ndiye ega mutengesi weanoshanda phased array (phased array) radar kuuto reUS. Shanduko kuenda kuGaN element base inobvumira kuti iverenge kune humwe hutungamiriri hwenguva refu mumunda wekuvandudza nekugadzirwa kwekuisa radar.
Source: 3dnews.ru