Kwenguva refu
CEA-Leti nyanzvi dzeVLSI Technology & Circuits 2020 symposium
Samsung, sekuziva kwedu, nekutanga kwekugadzirwa kwe3-nm chips, inoronga kugadzira maviri-level GAA transistors ane maviri flat chiteshi (nanopages) iri pamusoro peimwe, yakakomberedzwa nemativi ese gedhi. CEA-Leti nyanzvi dzakaratidza kuti zvinokwanisika kugadzira transistors nemanomwe nanopage migero uye panguva imwechete isa migero kuhupamhi hunodiwa. Semuenzaniso, yekuedza GAA transistor ine migero minomwe yakaburitswa mushanduro nehupamhi kubva pa15 nm kusvika 85 nm. Zviri pachena kuti izvi zvinokutendera kuti uise chaiwo maitiro e transistors uye unovimbisa kudzokorora kwavo (kuderedza kupararira kweparameter).
Sekureva kweFrench, iyo yakawanda chiteshi nhanho muGAA transistor, iyo yakakura hupamhi hunobudirira hweiyo chiteshi chese uye, saka, iko kudzoreka kuri nani kweiyo transistor. Zvakare, mune multilayer chimiro pane kushoma kuvuza ikozvino. Semuyenzaniso, nomwe-level GAA transistor ine katatu yakaderera leakage ikozvino pane maviri-level imwe (zvishoma, seSamsung GAA). Zvakanaka, iyo indasitiri yakazowana nzira yekukwira, ichifamba kubva pakuiswa kwakachinjika kwezvinhu pane chip kuenda kune yakatwasuka. Zvinoita sekuti ma microcircuits haafanire kuwedzera nzvimbo yemakristasi kuitira kuti atonyanya kukurumidza, ane simba uye ane simba.
Source: 3dnews.ru