Maererano neindasitiri zvinyorwa muTaiwan, izvo Internet resource DigiTimes, Chinese memory inogadzira ChangXin Memory Technologies (CXMT) iri mushishi kugadzirira mitsara yekugadzirwa kwakawanda kweLPDDR4 memory. ChangXin, inozivikanwawo seInnotron Memory, inonzi yakagadzira yayo yekugadzira yeDRAM ichishandisa 19nm tekinoroji.
Nezvekutengeserana kugadzirwa kwendangariro pabhizimusi rayo rekutanga 300 mm, ChangXin yaifanira muhafu yekutanga ye2019. Maiwe, izvi hazvisati zvaitika. Asi kutanga kwekugadzirwa kwe8-Gbit DDR4 LPDDR4 machipisi kuchaperekedzwa nekuwedzera kwesimba kune zviuru makumi maviri nemazana matatu emakumi matatu-nm silicon wafers pamwedzi. Iyo yakanyanya huwandu hwemitsara paChangXin bhizinesi inosvika zviuru zana nemakumi maviri neshanu 20 mm mawafers pamwedzi. Asi uyu hausiwo muganhu. Iyo kambani yakati ichatanga kuvaka yechipiri chirimwa gore rinouya kugadzirisa 300mm memory wafers.
Panguva imwecheteyo, uyu mugadziri weChinese anogona kutarisana nezvinetso zverumwe rudzi. Ngatiyeukei kuti kambani yekutanga yeChinese yaizotanga kugadzirwa kwakawanda kweDRAM memory yaive Fujian Jinhua. USA ine kurambidzwa kutenga michina yekugadzira kubva kune vekuAmerica vanobatana. MuTaiwan, vanotenda kuti ChangXin ichasangana nematambudziko akafanana neFujian. Pamusoro pezvo, yakatsvaga mainjiniya ane hunyanzvi kubva kune aimbove mubatsiri weTaiwanese weJapan Elpida, ane bhizinesi rakatorwa neAmerican Micron. Vaongorori vanotarisira zvirevo zvinopesana neChangXin kubva kuMicron uye zvirango kana divi reChinese rikasapindura.
Mukufanana, ChangXin iri kugadzira hunyanzvi hwekugadzira ndangariro ine 17 nm zviyero. Kupedzwa kwebudiriro kunotarisirwa muna 2021. Pamwe, yechipiri ChangXin chirimwa chichatanga kushanda nekugadzirwa kwemakristasi eDRAM neaya zviyero. Kunze kwekunge, hongu, zvirango zveUS uye hunyanzvi hweMicron hunova chipingamupinyi chisingakundiki munzira yake.
Source: 3dnews.ru