Muddo dheer
Khubarada CEA-Leti ee VLSI Technology & wareegyada dood-cilmiyeedka 2020
Samsung, inta aan ognahay, bilawga soo saarista chips-ka 3-nm, waxay qorsheyneysaa inay soo saarto laba heer oo GAA transistor ah oo leh laba kanaal siman (nanopages) oo ku yaal mid ka sarreeya kan kale, oo dhinacyada oo dhan ku wareegsan yahay albaab. Khubarada CEA-Leti waxay muujiyeen inay suurtogal tahay in la soo saaro transistors leh toddobo nanopage kanaal isla markaana isla mar ahaantaana u dejiyaan kanaalada ballaca loo baahan yahay. Tusaale ahaan, transistor GAA tijaabo ah oo leh todobo kanaal ayaa la sii daayay noocyo leh ballac min 15 nm ilaa 85 nm. Way caddahay in tani ay kuu oggolaanayso inaad dejiso sifooyin sax ah transistor-ka oo aad dammaanad qaaddo soo-celintooda (yaraynta faafinta xuduudaha).
Marka loo eego Faransiiska, heerarka kanaalka badan ee GAA transistor-ka, waa weynaanta ballaca waxtarka leh ee wadarta kanaalka iyo, sidaa darteed, xakamaynta wanaagsan ee transistor-ka. Sidoo kale, qaab dhismeedka lakabyo badan waxaa ku yar qulqulka qulqulka. Tusaale ahaan, toddobo-heer GAA transistor ah ayaa saddex jeer ka yar daadinta hadda jirta marka loo eego mid laba-heer ah (marka loo eego, sida Samsung GAA). Hagaag, warshadaha ayaa ugu dambeyntii helay dariiq kor u kaca, oo ka fogaanaya meelaynta tooska ah ee canaasiirta jajabka ilaa toosan. Waxay u muuqataa in microcircuits aysan u baahnayn inay kordhiyaan aagga crystals si ay u noqdaan kuwo xitaa dhakhso badan, awood badan iyo tamar hufan.
Source: 3dnews.ru