Faransiiska ayaa soo bandhigay toddobo heer GAA transistor-ka berri

Muddo dheer sir maaha, in laga bilaabo tignoolajiyada habka 3nm, transistor-yadu waxay ka guuri doonaan kanaalada "fin" FinFET tooska ah una guuri doona kanaalada nanopage-ka tooska ah ee gebi ahaanba ku wareegsan albaabbada ama GAA (albaab-dhan-ku wareegsan). Maanta, machadka Faransiiska CEA-Leti wuxuu muujiyay sida FinFET hababka wax soo saarka transistor-ka loogu isticmaali karo in lagu soo saaro transistors heerar badan oo GAA ah. Iyo ilaalinta sii wadida hababka farsamada waa saldhig la isku halayn karo oo isbeddel degdeg ah.

Faransiiska ayaa soo bandhigay toddobo heer GAA transistor-ka berri

Khubarada CEA-Leti ee VLSI Technology & wareegyada dood-cilmiyeedka 2020 ayaa warbixin ka diyaariyay ku saabsan wax soo saarka toddobo-heer GAA transistor (mahad gaar ah u leh cudurka faafa ee coronavirus, taas oo ay ugu mahadcelinayaan dukumeentiyada bandhigyada ugu dambeyntii bilaabay inay si degdeg ah u soo baxaan, oo aan bilo ka dib shirarka). Cilmi-baarayaasha Faransiisku waxay caddeeyeen in ay soo saari karaan GAA transistor oo leh kanaal qaab ah "xirmo" nanopages oo dhan iyadoo la adeegsanayo tignoolajiyada si ballaaran loo isticmaalo ee habka loo yaqaan RMG (albaab birta beddelka ah ama, Ruushka, beddelka (ku meel gaadhka) birta albaabka). Hal mar, habka farsamada ee RMG waxaa loo habeeyey soo saarista FinFET transistors iyo, sida aan aragno, waxaa lagu kordhin karaa wax soo saarka GAA transistor-yada oo leh nidaam heerar badan oo nanopage ah.

Samsung, inta aan ognahay, bilawga soo saarista chips-ka 3-nm, waxay qorsheyneysaa inay soo saarto laba heer oo GAA transistor ah oo leh laba kanaal siman (nanopages) oo ku yaal mid ka sarreeya kan kale, oo dhinacyada oo dhan ku wareegsan yahay albaab. Khubarada CEA-Leti waxay muujiyeen inay suurtogal tahay in la soo saaro transistors leh toddobo nanopage kanaal isla markaana isla mar ahaantaana u dejiyaan kanaalada ballaca loo baahan yahay. Tusaale ahaan, transistor GAA tijaabo ah oo leh todobo kanaal ayaa la sii daayay noocyo leh ballac min 15 nm ilaa 85 nm. Way caddahay in tani ay kuu oggolaanayso inaad dejiso sifooyin sax ah transistor-ka oo aad dammaanad qaaddo soo-celintooda (yaraynta faafinta xuduudaha).

Faransiiska ayaa soo bandhigay toddobo heer GAA transistor-ka berri

Marka loo eego Faransiiska, heerarka kanaalka badan ee GAA transistor-ka, waa weynaanta ballaca waxtarka leh ee wadarta kanaalka iyo, sidaa darteed, xakamaynta wanaagsan ee transistor-ka. Sidoo kale, qaab dhismeedka lakabyo badan waxaa ku yar qulqulka qulqulka. Tusaale ahaan, toddobo-heer GAA transistor ah ayaa saddex jeer ka yar daadinta hadda jirta marka loo eego mid laba-heer ah (marka loo eego, sida Samsung GAA). Hagaag, warshadaha ayaa ugu dambeyntii helay dariiq kor u kaca, oo ka fogaanaya meelaynta tooska ah ee canaasiirta jajabka ilaa toosan. Waxay u muuqataa in microcircuits aysan u baahnayn inay kordhiyaan aagga crystals si ay u noqdaan kuwo xitaa dhakhso badan, awood badan iyo tamar hufan.



Source: 3dnews.ru

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