{"id":38607,"date":"2019-10-31T22:24:51","date_gmt":"2019-10-31T19:24:51","guid":{"rendered":"https:\/\/prohoster.info\/blog\/budushhee-li-fi-polyaritony-eksitony-fotony-i-nemnogo-disulfida-volframa\/"},"modified":"2019-10-31T22:24:51","modified_gmt":"2019-10-31T19:24:51","slug":"budushhee-li-fi-polyaritony-eksitony-fotony-i-nemnogo-disulfida-volframa","status":"publish","type":"post","link":"https:\/\/prohoster.info\/sq\/blog\/administrirovanie\/budushhee-li-fi-polyaritony-eksitony-fotony-i-nemnogo-disulfida-volframa","title":{"rendered":"E ardhmja e Li-Fi: polaritonet, eksitonet, fotonat dhe pak disulfidi i wolframit","gt_translate_keys":[{"key":"rendered","format":"text"}]},"content":{"rendered":"

\"E
\n
\nP\u00ebr shum\u00eb vite, shkenc\u00ebtar\u00ebt nga e gjith\u00eb bota jan\u00eb angazhuar n\u00eb dy gj\u00ebra \u2014 shpikje dhe p\u00ebrmir\u00ebsime. Nd\u00ebrsa ndonj\u00ebher\u00eb \u00ebsht\u00eb e paqart\u00eb se cila \u00ebsht\u00eb m\u00eb e v\u00ebshtir\u00eb. Merrni, p\u00ebr shembull, diodet e zakonshme t\u00eb ndri\u00e7imit, t\u00eb cilat na duken kaq t\u00eb thjeshta dhe t\u00eb zakonshme, saq\u00eb as nuk i kushtojm\u00eb v\u00ebmendje. Por n\u00ebse i shtojm\u00eb pak eksitone, nj\u00eb shpin\u00eb polaritonesh dhe disulfid wolframi sipas shijes, diodet e ndri\u00e7imit nuk do t\u00eb jen\u00eb m\u00eb kaq prozaike. T\u00eb gjitha k\u00ebto terma t\u00eb komplikuar p\u00ebrfaq\u00ebsojn\u00eb emra t\u00eb komponenteve jasht\u00ebzakonisht t\u00eb pazakonta, kombinimi i t\u00eb cilave i mund\u00ebsoi shkenc\u00ebtar\u00ebve t\u00eb Kolegjit t\u00eb Nju Jorkut t\u00eb krijonin nj\u00eb sistem t\u00eb ri, i aft\u00eb t\u00eb transmetoj\u00eb informacion n\u00eb m\u00ebnyr\u00eb ekstremisht t\u00eb shpejt\u00eb me an\u00eb t\u00eb drit\u00ebs. Kjo zhvillim do t\u00eb ndihmoj\u00eb n\u00eb p\u00ebrmir\u00ebsimin e teknologjis\u00eb Li-Fi. Cilat p\u00ebrb\u00ebr\u00ebs t\u00eb rinj u p\u00ebrdor\u00ebn n\u00eb k\u00ebt\u00eb teknologji, \u00e7far\u00eb \u00ebsht\u00eb receta e k\u00ebtij \u201cpjat\u00eb\u201d dhe sa \u00ebsht\u00eb efikasiteti i diodeve t\u00eb reja eksitone-polaritone? K\u00ebt\u00eb do na tregojn\u00eb shkenc\u00ebtar\u00ebt. Le t\u00eb fillojm\u00eb.<\/a><\/noindex><\/p>\n

Baza e k\u00ebrkimit<\/h3>\n

\nN\u00ebse e thjeshtojm\u00eb deri n\u00eb nj\u00eb fjal\u00eb, at\u00ebher\u00eb kjo teknologji \u00ebsht\u00eb drita dhe gjith\u00e7ka q\u00eb lidhet me t\u00eb. S\u00eb pari, polaritonet, t\u00eb cilat lindin nga nd\u00ebrveprimi i fotoneve me eksitimet e mediumit (fononat, eksitonet, plazmonet, magnonet, etj.). S\u00eb dyti, eksitonet \u2014 nj\u00eb eksitim elektronik n\u00eb dielektrik, gjysm\u00ebp\u00ebr\u00e7ues apo metal, q\u00eb migron n\u00ebp\u00ebr kristal dhe nuk lidhet me transferimin e ngarkes\u00ebs elektrike dhe mas\u00ebs. <\/p>\n

\u00cbsht\u00eb e r\u00ebnd\u00ebsishme t\u00eb theksohet se k\u00ebto kvasipjesa preferojn\u00eb ftoht\u00ebsin\u00eb, pra, mund t\u00eb v\u00ebrehet aktiviteti i tyre vet\u00ebm n\u00eb temperatura jasht\u00ebzakonisht t\u00eb ul\u00ebta, gj\u00eb q\u00eb kufizon shum\u00eb aplikimin praktik. Por kjo ishte m\u00eb par\u00eb. N\u00eb k\u00ebt\u00eb punim, shkenc\u00ebtar\u00ebt arrit\u00ebn t\u00eb kalojn\u00eb kufizimin temperaturor dhe t'i p\u00ebrdorin ato n\u00eb temperatura ambientale. <\/p>\n

Karakteristika kryesore e polaritoneve \u00ebsht\u00eb mund\u00ebsia p\u00ebr t\u00eb lidhur fotonet me nj\u00ebra-tjetr\u00ebn. Fotonet, q\u00eb p\u00ebrplasin me atom\u00ebt e rubidumit, fitojn\u00eb mas\u00eb. Gjat\u00eb p\u00ebrplasjes t\u00eb shumt\u00eb, fotonet refuzojn\u00eb nj\u00ebra-tjetr\u00ebn, por n\u00eb raste t\u00eb rralla formojn\u00eb pal\u00eb dhe triplet\u00eb, duke humbur p\u00ebrb\u00ebr\u00ebsin atomik, i p\u00ebrfaq\u00ebsuar nga atomi i rubidumit.<\/p>\n

Por t\u00eb b\u00ebr\u00eb di\u00e7ka me drit\u00ebn, \u00ebsht\u00eb e nevojshme ta kap\u00ebsh at\u00eb. P\u00ebr k\u00ebt\u00eb nevojitet nj\u00eb rezonator optik, i cili \u00ebsht\u00eb nj\u00eb grup elementesh reflektuese, q\u00eb formojn\u00eb nj\u00eb val\u00eb drit\u00eb statike. <\/p>\n

N\u00eb k\u00ebt\u00eb studim, nj\u00eb rol t\u00eb r\u00ebnd\u00ebsish\u00ebm luajn\u00eb edhe m\u00eb t\u00eb pazakontat kuazipjes\u00eb - eksiton-polaritonet, t\u00eb cilat formohen fal\u00eb lidhjes s\u00eb fort\u00eb midis exciton\u00ebve dhe foton\u00ebve, t\u00eb kapur n\u00eb rezonatorin optik. <\/p>\n

Megjithat\u00eb, kjo nuk \u00ebsht\u00eb e mjaftueshme, pasi \u00ebsht\u00eb e nevojshme nj\u00eb baz\u00eb materiale, si\u00e7 thuhet. Dhe kush, n\u00ebse jo dikhalkogjenidi i metaleve kalimtare (DPM), do t\u00eb luante m\u00eb mir\u00eb k\u00ebt\u00eb rol. N\u00ebse jemi m\u00eb specifik\u00eb, si material p\u00ebr emetim \u00ebsht\u00eb p\u00ebrdorur nj\u00eb monolayer WS2 (disulfidi i wolframit), i cili ka energji lidh\u00ebse t\u00eb konsiderueshme p\u00ebr exciton\u00ebt, q\u00eb ishte nj\u00eb nga kriteret kryesore p\u00ebr p\u00ebrzgjedhjen e baz\u00ebs materiale.<\/p>\n

Kombinimi i t\u00eb gjith\u00eb elementeve t\u00eb p\u00ebrmendura m\u00eb sip\u00ebr ka lejuar krijimin e nj\u00eb LED polaritoni t\u00eb menaxhuar elektrikisht, q\u00eb punon n\u00eb temperatur\u00eb ambiente.<\/p>\n

P\u00ebr realizimin e k\u00ebtij dispositivi, monolayer WS2 \u00ebsht\u00eb vendosur midis barrierave t\u00eb holl\u00eb heksagonale t\u00eb nitridit t\u00eb borit (hBN) me shtresa grafeni, q\u00eb veprojn\u00eb si elektrod.<\/p>\n

Rezultatet e studimit<\/h3>\n

\nWS2, si nj\u00eb dikhalkogjenid i metaleve kalimtare, \u00ebsht\u00eb gjithashtu nj\u00eb material Van-der-Waals (vdW) me trash\u00ebsi atomike. Kjo tregon p\u00ebr vetit\u00eb e tij unike elektrike, optike, mekanike dhe termike. <\/p>\n

N\u00eb kombinim me materiale t\u00eb tjera vdW, si grafeni (si nj\u00eb conductor) dhe nitridi heksagonal i borit (hBN, si izolator), mund t\u00eb realizohen nj\u00eb s\u00ebr\u00eb dispozitivash gjysm\u00ebp\u00ebr\u00e7uesish t\u00eb menaxhuar elektrikisht, n\u00eb t\u00eb cilat p\u00ebrfshihen LED-\u00ebt. K\u00ebto kombinime t\u00eb materialeve Van-der-Waals dhe polariton\u00ebt jan\u00eb realizuar m\u00eb par\u00eb, si\u00e7 e pranojn\u00eb hapur studiuesit. Megjithat\u00eb, n\u00eb punimet e m\u00ebparshme, sistemet e p\u00ebrftuara ishin t\u00eb komplikuara dhe t\u00eb pasakta, si dhe nuk zbulonin t\u00eb gjith\u00eb potencialin e secil\u00ebs nga p\u00ebrb\u00ebr\u00ebsit.<\/p>\n

Nj\u00eb nga idet\u00eb, q\u00eb \u00ebsht\u00eb frym\u00ebzuar nga paraardh\u00ebsit, \u00ebsht\u00eb p\u00ebrdorimi i nj\u00eb platforme materiale dy-dimensionale. N\u00eb k\u00ebt\u00eb rast, \u00ebsht\u00eb e mundur t\u00eb realizohen pajisje me shtresa emisioni jasht\u00ebzakonisht t\u00eb holla, t\u00eb cilat mund t\u00eb integrohen me materiale t\u00eb tjera vdW, q\u00eb veprojn\u00eb si kontakte (grafeni) dhe barrierat e tunelimit (hBN). P\u00ebr m\u00eb tep\u00ebr, nj\u00eb dy-dimensionalitet i till\u00eb lejon kombinimin e diodave polaritoni me materialet vdW, t\u00eb cilat kan\u00eb vetit\u00eb magnetike t\u00eb pazakonta, superkondutivitet t\u00eb fort\u00eb dhe\/ose transferime topologjike jo-standard. Si rezultat i k\u00ebtij kombinimi, mund t\u00eb prodhohet nj\u00eb tip i ri pajisjeje, vetit\u00eb e s\u00eb cil\u00ebs mund t\u00eb jen\u00eb mjaft t\u00eb pazakonta. Por, si\u00e7 thon\u00eb shkenc\u00ebtar\u00ebt, kjo \u00ebsht\u00eb nj\u00eb tem\u00eb p\u00ebr nj\u00eb studim tjet\u00ebr.<\/p>\n

\"E
\nImazhi Nr. 1<\/i><\/p>\n

N\u00eb imazh 1a<\/b> tregohet nj\u00eb model three-dimensional t\u00eb pajisjes, e cila i ngjan nj\u00eb tort\u00eb me shtresa. Shtresa e argjendit sh\u00ebrben si pasqyra e sip\u00ebrme e rezonatorit optik, nd\u00ebrsa ajo e poshtme \u2014 nj\u00eb reflektor i shp\u00ebrndar\u00eb me 12 shtresa reflektori bragg*<\/i>. N\u00eb zon\u00ebn aktive \u00ebsht\u00eb e vendosur nj\u00eb zon\u00eb tunelimi.<\/p>\n

Reflektori i shp\u00ebrndar\u00eb Bragg*<\/b> \u00ebsht\u00eb nj\u00eb struktur\u00eb me disa shtresa, n\u00eb t\u00eb cil\u00ebn indeksi i thyerjes s\u00eb materialit ndryshon periodikisht p\u00ebrpendikular ndaj shtresave.<\/p><\/blockquote>\n

Zona tunelimi p\u00ebrb\u00ebhet nga nj\u00eb heterostruktur\u00eb vdW e p\u00ebrb\u00ebr\u00eb nga nj\u00eb monoshtres\u00eb WS2 (shkaktari i drit\u00ebs), shtresa t\u00eb holla hBN n\u00eb t\u00eb dy an\u00ebt e monoshtres\u00ebs (barrier tunelimi) dhe grafeni (elektrod\u00eb transparente p\u00ebr injektimin e elektron\u00ebve dhe vrimave).<\/p>\n

Jan\u00eb shtuar edhe dy shtresa WS2 p\u00ebr t\u00eb rritur forc\u00ebn totale t\u00eb gjeneratorit dhe, p\u00ebr rrjedhoj\u00eb, p\u00ebr nj\u00eb ndarje m\u00eb t\u00eb theksuar t\u00eb gjendjeve polaritoni Rabi.<\/p>\n

Rezhimi i funksionimit t\u00eb rezonatorit rregullohet duke ndryshuar trash\u00ebsin\u00eb e shtres\u00ebs PMMA (polimetilmetakrilat, pra, plastika organike).<\/p>\n

Imazhi 1b<\/b> \u00ebsht\u00eb nj\u00eb fotografi e heterostruktur\u00ebs vdW n\u00eb sip\u00ebrfaqen e reflektorit t\u00eb shp\u00ebrndar\u00eb Bragg. P\u00ebr shkak t\u00eb aft\u00ebsis\u00eb s\u00eb lart\u00eb reflektuese t\u00eb reflektorit t\u00eb shp\u00ebrndar\u00eb Bragg, i cili \u00ebsht\u00eb shtresa e poshtme, zona e tunelimit n\u00eb fotografi ka nj\u00eb kontrast shum\u00eb t\u00eb ul\u00ebt t\u00eb reflektimit, si rezultat, vet\u00ebm shtresa e sip\u00ebrme e trash\u00eb hBN shikohet.<\/p>\n

Grafiku 1c<\/b> p\u00ebrfaq\u00ebson nj\u00eb diagram\u00eb vdW t\u00eb heterostruktur\u00ebs n\u00eb gjeometrin\u00eb e tunelit me zhvendosje. Elektroluminescenca (EL) v\u00ebrehet mbi tensionin e pragut, kur niveli i Fermi i grafenit t\u00eb sip\u00ebrm (t\u00eb posht\u00ebm) \u00ebsht\u00eb zhvendosur mbi (n\u00ebn) zon\u00ebn e drejtueshm\u00ebris\u00eb (valenc\u00ebs) WS2, duke lejuar elektroneve (ndarjes) t\u00eb tunelojn\u00eb n\u00eb zon\u00ebn e drejtueshm\u00ebris\u00eb (valenc\u00ebs) WS2. Kjo krijon kushte t\u00eb favorshme p\u00ebr formimin e ekziton\u00ebve n\u00eb shtres\u00ebn WS2 me rikombinimin radiactiv (t\u00eb emetuar) t\u00eb elektron-ndarjes.<\/p>\n

Kall\u00ebzimi nga emituesit e drit\u00ebs mbi baz\u00ebn e kalimeve p-n, t\u00eb cil\u00ebt k\u00ebrkojn\u00eb doping p\u00ebr funksionim, EL nga pajisjet tunel, varet p\u00ebrjashtimisht nga rryma tunel, duke shmangur humbjet optike dhe \u00e7do ndryshim n\u00eb rezistenc\u00ebn specifike t\u00eb shkaktuar nga ndryshimi i temperatur\u00ebs. Me t\u00eb nj\u00ebjt\u00ebn koh\u00eb, arkitektura tunel lejon nj\u00eb fush\u00eb shum\u00eb m\u00eb t\u00eb madhe emetimi krahasuar me pajisjet e dikhalkogenidit me baz\u00eb kalimesh p-n.<\/p>\n

Imazhi 1d<\/b> demonstron karakteristikat elektrike t\u00eb dend\u00ebsis\u00eb s\u00eb rrym\u00ebs tunel (J<\/i>) si funksion i tensionit t\u00eb zhvendosjes (V<\/i>) mes elektrodave t\u00eb grafenit. Rritja e papritur e rrym\u00ebs si p\u00ebr tensionin pozitiv ashtu edhe at\u00eb negativ tregon p\u00ebr shfaqjen e rrym\u00ebs tunel p\u00ebrmes struktur\u00ebs. N\u00eb trash\u00ebsin\u00eb optimale t\u00eb shtresave hBN (~2 nm), v\u00ebrehet rrym\u00eb tunel t\u00eb konsiderueshme dhe nj\u00eb rritje n\u00eb koh\u00ebn e jetes\u00ebs s\u00eb mbart\u00ebsve t\u00eb inkorporuar p\u00ebr rikombinimin radiactiv.<\/p>\n

Para se t\u00eb kryhej eksperimenti elektroluminescent, u krye karakterizimi i pajisjes p\u00ebr aft\u00ebsin\u00eb reflektuese t\u00eb drit\u00ebs s\u00eb bardh\u00eb me sakt\u00ebsi k\u00ebndore p\u00ebr t\u00eb konfirmuar pranin\u00eb e lidhjes s\u00eb fort\u00eb t\u00eb ekziton\u00ebve.<\/p>\n

\"E
\nImazhi \u21162<\/i><\/p>\n

N\u00eb imazh 2a<\/b> shfaqin spektrat e reflektimit me sakt\u00ebsi k\u00ebndore nga zona aktive e pajisjes, duke demonstruar sjelljen q\u00eb ndalon kalimin. Gjithashtu, u v\u00ebrejt fotoluminescenca (FL) gjat\u00eb eksitimit jo-rezonant (460 nm), q\u00eb demonstroi emetim t\u00eb intensitetit t\u00eb lart\u00eb nga dega e poshtme e polaritoneve dhe m\u00eb pak emetim nga dega e sip\u00ebrme e polaritoneve (2b<\/b>).<\/p>\n

N\u00eb 2c<\/b> tregohet disperzioni i elektroluminescenc\u00ebs s\u00eb polariton\u00ebve n\u00eb integrimin 0.1 \u03bcA\/mk\u00b2. Ndarja Rabi dhe \u00e7rregullimi i rezonatorit, t\u00eb marra p\u00ebrmes p\u00ebrshtatjes s\u00eb mod\u00ebve t\u00eb oscilatorit (vija e bardh\u00eb e vazhdueshme dhe e nd\u00ebrprer\u00eb) ndaj eksperimentit elektroluminescent, jan\u00eb ~33 meV dhe ~-13 meV p\u00ebrkat\u00ebsisht. \u00c7rregullimi i rezonatorit p\u00ebrcaktohet si \u03b4 = Ec \u2212 Ex, ku Ex \u00ebsht\u00eb energjia e eksitonit, dhe Ec p\u00ebrfaq\u00ebson energjin\u00eb e fotonit t\u00eb rezonatorit me momentum zero n\u00eb plan. Grafiku 2d<\/b> \u00ebsht\u00eb nj\u00eb prerje n\u00ebn k\u00ebnde t\u00eb ndryshme t\u00eb disperzionit elektroluminescent. K\u00ebtu \u00ebsht\u00eb qart\u00eb e dukshme disperzioni i mod\u00ebve t\u00eb sip\u00ebrme dhe t\u00eb poshtme t\u00eb polariton\u00ebve me antikthes\u00eb q\u00eb ndodh n\u00eb zon\u00ebn e rezonanc\u00ebs eksitonike.<\/p>\n

\"E
\nImazhi Nr. 3<\/i><\/p>\n

Me rritjen e rrjedh\u00ebs s\u00eb tunneling, intensiteti i p\u00ebrgjithsh\u00ebm i EL rritet. Elektroluminescenca e dob\u00ebt nga polariton\u00ebt v\u00ebrehet af\u00ebr zhvendosjes s\u00eb pragut (3a<\/b>), nd\u00ebrsa n\u00eb nj\u00eb zhvendosje mjaft t\u00eb madhe mbi prag, emetimi polariton b\u00ebhet i duksh\u00ebm (3b<\/b>).<\/p>\n

N\u00eb imazh 3c<\/b> tregohet grafiku polarn i intensitetit t\u00eb EL si funksion i k\u00ebndit, q\u00eb ilustron nj\u00eb konus t\u00eb ngusht\u00eb emetimi \u00b1 15\u00b0. Diagrami i emetimit mbetet praktikisht i pandryshuar si p\u00ebr rrjedhjen minimale (kurba e gjelb\u00ebr), ashtu edhe p\u00ebr rrjedhjen maksimale (kurba portokalli) t\u00eb excitimit. N\u00eb 3d<\/b> tregohet intensiteti e integruar n\u00eb rrjedha t\u00eb ndryshme t\u00eb tunnelingit, e cila, si\u00e7 duket nga grafiku, \u00ebsht\u00eb mjaft lineare. Prandaj, rritja e rrjedh\u00ebs deri n\u00eb vlera t\u00eb larta mund t\u00eb rezultoj\u00eb n\u00eb shp\u00ebrb\u00ebrjen e suksesshme t\u00eb polariton\u00ebve p\u00ebrgjat\u00eb deg\u00ebs s\u00eb poshtme dhe t\u00eb krijoj\u00eb nj\u00eb diagram t\u00eb jasht\u00ebzakonsh\u00ebm t\u00eb ngusht\u00eb t\u00eb emetimit p\u00ebr shkak t\u00eb gjenerimit t\u00eb polariton\u00ebve. Megjithat\u00eb, n\u00eb k\u00ebt\u00eb eksperiment nuk ishte e mundur t\u00eb arrihej kjo p\u00ebr shkak t\u00eb kufizimeve t\u00eb lidhura me prishjen dielektrike t\u00eb barrier\u00ebs s\u00eb tunnelingut hBN. <\/p>\n

Pikat e kuqe n\u00eb 3d<\/b> tregon matjet e nj\u00eb treguesi tjet\u00ebr - efikasiteti t\u00eb jasht\u00ebm kuantor*<\/i>.<\/p>\n

Efikasiteti kuantor*<\/b> \u00ebsht\u00eb raporti i numrit t\u00eb fotoneve, p\u00ebrthithja e t\u00eb cilave shkaktoi formimin e quasiteksteve, me numrin total t\u00eb fotoneve t\u00eb p\u00ebrthithura.<\/p><\/blockquote>\n

Efi\u00e7enca kuantike e v\u00ebzhguar \u00ebsht\u00eb e krahasueshme me at\u00eb n\u00eb LED t\u00eb tjera polaritone (t\u00eb bazuara n\u00eb materiale organike, tubat e karbonit, etj.). Megjithat\u00eb, \u00ebsht\u00eb e r\u00ebnd\u00ebsishme t\u00eb theksohet se n\u00eb pajisjen e studiuar, trash\u00ebsia e shtres\u00ebs q\u00eb emeton drit\u00eb \u00ebsht\u00eb vet\u00ebm 0.7 nm, nd\u00ebrsa p\u00ebr pajisje t\u00eb tjera, kjo vler\u00eb \u00ebsht\u00eb shum\u00eb m\u00eb e lart\u00eb. Shkenc\u00ebtar\u00ebt nuk e fshehin se treguesi i efikasitetit kuantik t\u00eb pajisjes s\u00eb tyre nuk \u00ebsht\u00eb m\u00eb i larti, por mund t\u00eb rritet duke vendosur numra m\u00eb t\u00eb madh monoshkall\u00ebsh brenda zon\u00ebs tunelore, t\u00eb ndara me shtresa t\u00eb holla hBN. <\/p>\n

K\u00ebrkuesit gjithashtu kontrolluan ndikimin e \u00e7rregullimit t\u00eb rezonatorit n\u00eb EL t\u00eb polaritonit, duke prodhuar nj\u00eb pajisje tjet\u00ebr, por me nj\u00eb \u00e7rregullim m\u00eb t\u00eb fort\u00eb (- 43 meV).<\/p>\n

\"E
\nImazhi Nr. 4<\/i><\/p>\n

N\u00eb imazh 4a<\/b> tregohet spektrat e EL me resolucion k\u00ebndor t\u00eb k\u00ebsaj pajisjeje n\u00eb densitetin e rrym\u00ebs 0.2 \u03bcA\/mk\u00b2. P\u00ebr shkak t\u00eb \u00e7rregullimit t\u00eb fort\u00eb, pajisja demonstron nj\u00eb efekt t\u00eb theksuar t\u00eb qaf\u00ebs s\u00eb shishes n\u00eb EL me maksimumin e emisionit q\u00eb ndodh n\u00ebn nj\u00eb k\u00ebnd t\u00eb madh. Kjo konfirmohet m\u00eb tej n\u00eb imazh 4b<\/b>, ku krahasohen grafik\u00ebt polar\u00eb t\u00eb k\u00ebsaj pajisjeje me t\u00eb par\u00ebn (2c<\/b>).<\/p>\n

P\u00ebr nj\u00eb njohje m\u00eb t\u00eb detajuar t\u00eb nuancave t\u00eb hulumtimit, rekomandoj t\u00eb shikoni n\u00eb raportin e shkenc\u00ebtar\u00ebve<\/a><\/noindex>.<\/p>\n

Epilogu<\/h3>\n

\nK\u00ebshtu, t\u00eb gjitha v\u00ebzhgimet dhe matjet e p\u00ebrmendura m\u00eb sip\u00ebr konfirmojn\u00eb pranin\u00eb e elektroluminiscenc\u00ebs polaritone n\u00eb heterostruktur\u00ebn vdW, t\u00eb integruar n\u00eb mikror rezonatorin optik. Arkitektura tunelore e pajisjes s\u00eb studiuar lejon futjen e elektron\u00ebve\/vrimave dhe rikombinimin n\u00eb monoshkallin WS2, i cili sh\u00ebrben si emetues drit\u00eb. \u00cbsht\u00eb e r\u00ebnd\u00ebsishme t\u00eb theksohet se mekanizmi tunelor i pajisjes nuk k\u00ebrkon ligjerimin e komponimeve, \u00e7ka minimizon humbjet dhe ndryshimet e ndryshme q\u00eb lidhen me temperatur\u00ebn.<\/p>\n

\u00cbsht\u00eb v\u00ebrtetuar se EL ka nj\u00eb drejtk\u00ebnd\u00ebsh t\u00eb lart\u00eb fal\u00eb disperzionit t\u00eb rezonatorit. Prandaj, p\u00ebrmir\u00ebsimi i cil\u00ebsis\u00eb s\u00eb rezonatorit dhe nj\u00eb furnizim m\u00eb i lart\u00eb i rrym\u00ebs do t\u00eb mund\u00ebsoj\u00eb rritjen e efikasitetit t\u00eb LED-ve t\u00eb mikror rezonator\u00ebve, si dhe polaritoneve t\u00eb mikror rezonator\u00ebve dhe lazer\u00ebve fotonik\u00eb t\u00eb kontrolluar elektrikisht.<\/p>\n

Ky punim e konfirmoi p\u00ebrs\u00ebri se dikhalkogjenid\u00ebt e metaleve kalimtare kan\u00eb v\u00ebrtet\u00eb veti unike dhe nj\u00eb gam\u00eb t\u00eb gjer\u00eb aplikimesh.<\/p>\n

Studime t\u00eb tilla dhe shpikje novatore mund t\u00eb ken\u00eb nj\u00eb ndikim t\u00eb madh n\u00eb zhvillimin dhe p\u00ebrhapjen e teknologjive t\u00eb transmisionit t\u00eb t\u00eb dh\u00ebnave p\u00ebrmes LED-\u00ebve dhe drit\u00ebs. Nj\u00eb nga k\u00ebto teknologji futuriste \u00ebsht\u00eb Li-Fi, e cila mund t\u00eb ofroj\u00eb nj\u00eb shpejt\u00ebsi shum\u00eb m\u00eb t\u00eb madhe se sa Wi-Fi aktual.<\/p>\n

Faleminderit p\u00ebr v\u00ebmendjen, q\u00ebndroni kurioz\u00eb dhe ju uroj nj\u00eb jav\u00eb t\u00eb mbar\u00eb t\u00eb pun\u00ebs, ragazzi! \ud83d\ude42<\/p>\n

Faleminderit q\u00eb q\u00ebndroni me ne. Ju p\u00eblqejn\u00eb artikujt tan\u00eb? D\u00ebshironi t\u00eb shihni m\u00eb shum\u00eb materiale interesante? Na mb\u00ebshtetni duke b\u00ebr\u00eb nj\u00eb porosi ose duke na rekomanduar miqve tuaj. 30% zbritje p\u00ebr p\u00ebrdoruesit e Habra n\u00eb nj\u00eb analog unik t\u00eb server\u00ebve entry-level, t\u00eb cilin e kemi shpikur p\u00ebr ju:<\/b> E gjith\u00eb e v\u00ebrteta p\u00ebr VPS (KVM) E5-2650 v4 (6 B\u00ebrthama) 10GB DDR4 240GB SSD 1Gbps nga $20 ose si t\u00eb ndajm\u00eb sakt\u00ebsisht serverin?<\/a><\/noindex> (opcionet me RAID1 dhe RAID10, deri n\u00eb 24 b\u00ebrthama dhe deri n\u00eb 40GB DDR4 jan\u00eb t\u00eb disponueshme).<\/p>\n

Dell R730xd p\u00ebr dy her\u00eb m\u00eb lir\u00eb?<\/b> Vet\u00ebm te ne 2 x Intel TetraDeca-Core Xeon 2x E5-2697v3 2.6GHz 14C 64GB DDR4 4x960GB SSD 1Gbps 100 TB nga $199<\/a><\/noindex> n\u00eb Holand\u00eb! Dell R420 \u2014 2x E5-2430 2.2Ghz 6C 128GB DDR3 2x960GB SSD 1Gbps 100TB \u2014 nga $99!<\/b><\/b> Lexoni rreth Si t\u00eb nd\u00ebrtoni nj\u00eb infrastruktur\u00eb t\u00eb klas\u00ebs korporative me p\u00ebrdorimin e server\u00ebve Dell R730xd E5-2650 v4 me \u00e7mim 9000 euro p\u00ebr pak para?<\/a><\/noindex>
\n
Burimi: habr.com<\/a><\/p>","protected":false,"gt_translate_keys":[{"key":"rendered","format":"html"}]},"excerpt":{"rendered":"

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