{"id":73397,"date":"2020-03-09T08:42:28","date_gmt":"2020-03-09T05:42:28","guid":{"rendered":"https:\/\/prohoster.info\/blog\/administrirovanie\/vvedenie-v-ssd-chast-4-fizicheskaya"},"modified":"2020-03-09T08:42:28","modified_gmt":"2020-03-09T05:42:28","slug":"vvedenie-v-ssd-chast-4-fizicheskaya","status":"publish","type":"post","link":"https:\/\/prohoster.info\/sq\/blog\/administrirovanie\/vvedenie-v-ssd-chast-4-fizicheskaya","title":{"rendered":"Hyrja n\u00eb SSD. Pjesa 4. Fizike","gt_translate_keys":[{"key":"rendered","format":"text"}]},"content":{"rendered":"<p><img decoding=\"async\" alt=\"Hyrja n\u00eb SSD. Pjesa 4. Fizike\" src=\"\/wp-content\/uploads\/2020\/03\/07ee6f41981982df22293878e6c6d99a.png\" style=\"display:block;margin: 0 auto;\" \/><br \/>\nPjes\u00ebt e kaluara t\u00eb ciklit \"Hyrja n\u00eb SSD\" i kan\u00eb treguar lexuesit historin\u00eb e shfaqjes s\u00eb SSD-ve, nd\u00ebrfaqet e bashk\u00ebveprimit me to dhe faktor\u00ebt e njohur t\u00eb form\u00ebs. Pjesa e kat\u00ebrt do t\u00eb flas\u00eb p\u00ebr ruajtjen e t\u00eb dh\u00ebnave brenda nj\u00ebsive.<br \/>\n<noindex><a rel=\"nofollow\" name=\"habracut\"><\/a><\/noindex><br \/>\n<i>N\u00eb artikujt e m\u00ebparsh\u00ebm t\u00eb ciklit:<\/i><\/p>\n<ol>\n<li><i><noindex><a rel=\"nofollow\" href=\"https:\/\/habr.com\/ru\/company\/selectel\/blog\/475304\/\">Historia e krijimit t\u00eb HDD dhe SSD<\/a><\/noindex><\/i><\/li>\n<li><i><noindex><a rel=\"nofollow\" href=\"https:\/\/habr.com\/ru\/company\/selectel\/blog\/478684\/\">Shfaqja e nd\u00ebrfaqeve t\u00eb ruajt\u00ebsve<\/a><\/noindex><\/i><\/li>\n<li><i><noindex><a rel=\"nofollow\" href=\"https:\/\/habr.com\/ru\/company\/selectel\/blog\/488230\/\">Ve\u00e7orit\u00eb e faktor\u00ebve t\u00eb form\u00ebs<\/a><\/noindex><\/i><\/li>\n<\/ol>\n<p>\nRuajtja e t\u00eb dh\u00ebnave n\u00eb nj\u00ebsit\u00eb solide mund t\u00eb ndahet n\u00eb dy pjes\u00eb logjike: ruajtja e informacionit n\u00eb nj\u00eb celul\u00eb dhe organizimi i ruajtjes s\u00eb celulave.<\/p>\n<p>\u00c7do celul\u00eb e nj\u00ebsis\u00eb solide ruan <b>nj\u00eb ose disa bit\u00eb informacioni<\/b>. P\u00ebr ruajtjen e informacionit p\u00ebrdoren procese t\u00eb ndryshme <b>. Gjat\u00eb zhvillimit t\u00eb nj\u00ebsive solide jan\u00eb shqyrtuar madh\u00ebsi fizike t\u00eb ndryshme p\u00ebr kodimin e informacionit:<\/b>ngarkesat elektrike<\/p>\n<ul>\n<li><b>(p\u00ebrfshir\u00eb memorjen Flash);<\/b> momentet magnetike<\/li>\n<li><b>(memoria magnetoresistive);<\/b> gjendjet fazore<\/li>\n<li><b>(memoria me ndryshim t\u00eb gjendjes fazore).<\/b> Memoria e bazuar n\u00eb ngarkesat elektrike<\/li>\n<\/ul>\n<p><\/p>\n<h2>Kodimi i informacionit me ngarkes\u00eb negative \u00ebsht\u00eb baza e disa zgjidhjeve:<\/h2>\n<p>\nKodimi i informacionit me an\u00eb t\u00eb ngarkes\u00ebs negative \u00ebsht\u00eb n\u00eb thelb t\u00eb disa zgjidhjeve:<\/p>\n<ul>\n<li>memoria EPROM e fshir\u00eb me rreze ultraviolet\u00eb;<\/li>\n<li>memoria EEPROM e fshir\u00eb elektrikisht;<\/li>\n<li>Memoria Flash.<\/li>\n<\/ul>\n<p>\n<img decoding=\"async\" alt=\"Hyrja n\u00eb SSD. Pjesa 4. Fizike\" src=\"\/wp-content\/uploads\/2020\/03\/8859aa8e143aeefc0a33f8255f1708f3.png\" style=\"display:block;margin: 0 auto;\" \/><br \/>\n\u00c7do qeliz\u00eb e memories \u00ebsht\u00eb <b>nj\u00eb transistor MOSFET me dyert plav\u00ebruese<\/b>, n\u00eb t\u00eb cilin ruhet nj\u00eb ngarkes\u00eb negative. Ndryshimi i tij nga nj\u00eb transistor MOSFET i zakonsh\u00ebm \u00ebsht\u00eb prania e dyert plav\u00ebruese \u2014 nj\u00eb drejtues n\u00eb shtres\u00ebn dielektrike.<\/p>\n<p>Kur krijohet nj\u00eb diferenc\u00eb potenciali mes drenazhit dhe burimit dhe ka nj\u00eb potencial pozitiv n\u00eb dyert, do t\u00eb rrjedh\u00eb nj\u00eb rrym\u00eb nga burimi n\u00eb drenazh. Megjithat\u00eb, me nj\u00eb diferenc\u00eb potenciale mjaft t\u00eb madhe disa elektrone \"kalojn\u00eb\" p\u00ebrmes shtres\u00ebs dielektrike dhe p\u00ebrfundojn\u00eb n\u00eb dyert plav\u00ebruese. Ky fenomen quhet <noindex><a rel=\"nofollow\" href=\"https:\/\/ru.wikipedia.org\/wiki\/%D0%A2%D1%83%D0%BD%D0%BD%D0%B5%D0%BB%D1%8C%D0%BD%D1%8B%D0%B9_%D1%8D%D1%84%D1%84%D0%B5%D0%BA%D1%82\">efekti i tunelimit<\/a><\/noindex>.<\/p>\n<p><img decoding=\"async\" alt=\"Hyrja n\u00eb SSD. Pjesa 4. Fizike\" src=\"\/wp-content\/uploads\/2020\/03\/7b6141b5e53940bcc073a3ee1c327eec.png\" style=\"display:block;margin: 0 auto;\" \/><br \/>\nDyert plav\u00ebruese me ngarkes\u00eb negative krijojn\u00eb nj\u00eb fush\u00eb elektrike q\u00eb pengon kalimin e rrym\u00ebs nga burimi n\u00eb drenazh. P\u00ebr m\u00eb tep\u00ebr, prania e elektroneve n\u00eb dyert plav\u00ebruese rrit tensionin e pragut, n\u00eb t\u00eb cil\u00ebn hapet transistor. Me \u00e7do \"shkrim\" n\u00eb dyert plav\u00ebruese t\u00eb transistorit, shtresa dielektrike d\u00ebmtohet pak, \u00e7ka imponon nj\u00eb kufizim n\u00eb numrin e cikleve t\u00eb riprogramimit t\u00eb \u00e7do qelize.<\/p>\n<blockquote><p>Transistor\u00ebt MOS me nj\u00eb der\u00eb t\u00eb l\u00ebvizshme u zhvilluan nga Dawon Kahng dhe Simon Min Sze n\u00eb Bell Labs n\u00eb vitin 1967. M\u00eb von\u00eb, gjat\u00eb hetimeve t\u00eb defekteve n\u00eb qarqet e integruara, u v\u00ebrejt se ndryshimi i tensionit t\u00eb pragut, p\u00ebr shkak t\u00eb ngarkes\u00ebs n\u00eb der\u00ebn e l\u00ebvizshme, kishte ndikuar n\u00eb hapjen e transistorit. Ky zbulim nxiti Dov Frohman t\u00eb fillonte pun\u00ebn mbi memorjen e bazuar n\u00eb k\u00ebt\u00eb fenomen.<\/p><\/blockquote>\n<p>Ndryshimi i tensionit t\u00eb pragut lejon \"programimin\" e transistor\u00ebve. Transistor\u00ebt me ngarkes\u00eb n\u00eb der\u00ebn e l\u00ebvizshme nuk do t\u00eb hapen kur t\u00eb aplikohet nj\u00eb tension m\u00eb i madh se tensioni i pragut p\u00ebr nj\u00eb transistor pa elektrone, por m\u00eb i vog\u00ebl se tensioni i pragut p\u00ebr nj\u00eb transistor me elektrone. Le t\u00eb quajm\u00eb k\u00ebt\u00eb vler\u00eb <b>tensioni i leximit<\/b>.<\/p>\n<h3>Memoria e Programueshme e Lexueshme dhe e Fshishme<\/h3>\n<p>\n<noindex><a rel=\"nofollow\" href=\"https:\/\/ru.wikipedia.org\/wiki\/EPROM\"><img decoding=\"async\" alt=\"Hyrja n\u00eb SSD. Pjesa 4. Fizike\" src=\"\/wp-content\/uploads\/2020\/03\/bfe650362b93b530401453130147d679.png\" style=\"display:block;margin: 0 auto;\" \/><\/a><\/noindex><br \/>\nN\u00eb vitin 1971, Dov Frohman nga Intel krijoi nj\u00eb memorje t\u00eb fshishme n\u00eb transistor\u00eb, e quajtur <b>Memoria e Programueshme e Lexueshme dhe e Fshishme (EPROM)<\/b>. Regjistrimi n\u00eb memorie b\u00ebhej me ndihm\u00ebn e nj\u00eb pajisjeje speciale \u2014 programuesi. Programuesi aplikon nj\u00eb tension m\u00eb t\u00eb lart\u00eb n\u00eb \u00e7ip se sa ai q\u00eb p\u00ebrdoret n\u00eb qarqet digjitale, duke \"regjistruar\" k\u00ebshtu elektronet n\u00eb kapak\u00ebt flotues t\u00eb trancistor\u00ebve, aty ku \u00ebsht\u00eb e nevojshme.<\/p>\n<p><noindex><a rel=\"nofollow\" href=\"https:\/\/ru.wikipedia.org\/wiki\/EPROM\"><img decoding=\"async\" alt=\"Hyrja n\u00eb SSD. Pjesa 4. Fizike\" src=\"\/wp-content\/uploads\/2020\/03\/959b0d6bac92dafb1eb4aa46ea03952c.png\" style=\"display:block;margin: 0 auto;\" \/><\/a><\/noindex><br \/>\nN\u00eb memorien EPROM nuk ishte parashikuar pastrimi i kapak\u00ebve flotues t\u00eb trancistor\u00ebve n\u00eb m\u00ebnyr\u00eb elektrike. N\u00eb vend t\u00eb k\u00ebsaj, propozoheshin ndikimi mbi trancistor\u00ebt me nj\u00eb rrezatim t\u00eb fort\u00eb ultravjollc\u00eb, foton\u00ebt e t\u00eb cilit u japin energji elektron\u00ebve, e nevojshme p\u00ebr t\u00eb l\u00ebn\u00eb kapakun flotues. P\u00ebr t\u00eb siguruar aksesin e ultravjollc\u00ebs n\u00eb brend\u00ebsi t\u00eb \u00e7ipit, nj\u00eb qelq kuarc i \u00ebsht\u00eb shtuar trupit.<\/p>\n<p><noindex><a rel=\"nofollow\" href=\"https:\/\/newsroom.intel.com\/news\/intel-50-qa-intels-dov-frohman-inventor-eprom\/#gs.wum63d\"><img decoding=\"async\" alt=\"Hyrja n\u00eb SSD. Pjesa 4. Fizike\" src=\"\/wp-content\/uploads\/2020\/03\/725b3ed07b0a5c5ceb285f6b7e234f08.png\" style=\"display:block;margin: 0 auto;\" \/><\/a><\/noindex><\/p>\n<blockquote><p>Fro-man para her\u00eb t\u00eb par\u00eb prezantoi prototipin e tij EPROM n\u00eb shkurt 1971 n\u00eb nj\u00eb konferenc\u00eb p\u00ebr mikro\u00e7ipet e ngurta n\u00eb Filadelfia. Gordon Moore e kujton demostrimin: \u00abDov tregoi nj\u00eb model bit\u00ebsh n\u00eb qelizat e memories EPROM. Kur qelizat ishin ndikuar nga drita ultraviolet, bit\u00ebt zhdukeshin nj\u00eb p\u00ebr nj\u00eb, deri sa logoja e panjohur e Intel u fshi plot\u00ebsisht. ... Bit\u00ebt po humbnin, dhe kur i fundit nga ta u zhduk, e gjith\u00eb audienca shp\u00ebrtheu n\u00eb duarplasje. Artikulli i Dov u shpall si m\u00eb i miri n\u00eb konferenc\u00eb\u00bb.<i> \u2014 P\u00ebrkthim i artikullit <noindex><a rel=\"nofollow\" href=\"https:\/\/newsroom.intel.com\/news\/intel-at-50-erasable-programmable-read-only-memory\">newsroom.intel.com<\/a><\/noindex><\/i><\/p><\/blockquote>\n<p>Memoria EPROM \u00ebsht\u00eb m\u00eb e shtrenjt\u00eb se pajisjet e tjera t\u00eb ruajtjes s\u00eb p\u00ebrhershme \u00abt\u00eb nj\u00ebp\u00ebrdorimshme\u00bb (ROM), por mund\u00ebsia e riprogramimit lejon q\u00eb skemat t\u00eb rregullohen m\u00eb shpejt dhe zvog\u00eblon koh\u00ebn p\u00ebr zhvillimin e pajisjeve t\u00eb reja.<\/p>\n<p>Riprogramimi i ROM-it me drit\u00eb ultraviolet ishte nj\u00eb p\u00ebrparim t\u00eb r\u00ebnd\u00ebsish\u00ebm, megjithat\u00eb, ideja e riprogramimit elektrik ishte tashm\u00eb \u00abn\u00eb aj\u00ebr\u00bb.<\/p>\n<h3>Memoria e Programueshme e Fshirshme Elektrolitike<\/h3>\n<p>\nN\u00eb vitin 1972, tre japonez\u00eb: Yasuo Tarui, Yutaka Hayashi dhe Kiyoko Nagai prezantuan memorien e par\u00eb t\u00eb p\u00ebrhershme t\u00eb fshirshme elektrikisht (Electrically Erasable Programmable Read-Only Memory, EEPROM ose E2PROM). M\u00eb pas, studimet e tyre do t\u00eb b\u00ebhen pjes\u00eb e patentave p\u00ebr realizimet komerciale t\u00eb memorjes EEPROM.<\/p>\n<p>\u00c7do qeliz\u00eb e memorie EEPROM p\u00ebrb\u00ebhet nga disa transistor\u00eb:<\/p>\n<ul>\n<li>transistor me sob\u00eb t\u00eb lundrueshme p\u00ebr ruajtjen e nj\u00eb bitti;<\/li>\n<li>transistor p\u00ebr menaxhimin e modit t\u00eb leximit-shkrimit.<\/li>\n<\/ul>\n<p>\nKjo konstrukcion e komplikon shum\u00eb wiringun e skem\u00ebs elektrike, prandaj memorja EEPROM u p\u00ebrdor n\u00eb rastet kur volumi i vog\u00ebl i memories nuk ishte kritik. P\u00ebr ruajtjen e nj\u00eb sasi t\u00eb madhe t\u00eb t\u00eb dh\u00ebnave, vazhdoi t\u00eb p\u00ebrdorej EPROM.<\/p>\n<h3>Memoria Flash<\/h3>\n<p>\nMemoria Flash, duke bashkuar karakteristikat m\u00eb t\u00eb mira t\u00eb EPROM dhe EEPROM, u zhvillua nga profesori japonez Fujio Masuoka, inxhinier i kompanis\u00eb Toshiba, n\u00eb vitin 1980. Zhvillimi i par\u00eb u quajt Memoria Flash e tipit NOR dhe, si paraardh\u00ebsit e saj, bazohet n\u00eb transistor\u00eb MOP me sob\u00eb t\u00eb lundrueshme.<\/p>\n<p><img decoding=\"async\" alt=\"Hyrja n\u00eb SSD. Pjesa 4. Fizike\" src=\"\/wp-content\/uploads\/2020\/03\/afb642e62142301a0430736f88a747a9.png\" style=\"display:block;margin: 0 auto;\" \/><br \/>\nMemoria Flash e tipit NOR \u00ebsht\u00eb nj\u00eb matric\u00eb dy-dimensionale tranzistore. Derat e tranzistor\u00ebve jan\u00eb t\u00eb lidhur me linj\u00ebn e fjal\u00ebve, nd\u00ebrsa shkarkimet jan\u00eb n\u00eb linj\u00ebn e bit\u00ebve. Kur aplikohet tension n\u00eb linj\u00ebn e fjal\u00ebve, tranzistor\u00ebt q\u00eb p\u00ebrmbajn\u00eb elektrone, dometh\u00ebn\u00eb q\u00eb ruajn\u00eb \"nj\u00eb\", nuk do t\u00eb hapen dhe aktuali nuk do t\u00eb rrjedh\u00eb. Nga prania ose mungesa e aktuait n\u00eb linj\u00ebn e bit\u00ebve p\u00ebrcaktohet vlera e bitit.<\/p>\n<p><img decoding=\"async\" alt=\"Hyrja n\u00eb SSD. Pjesa 4. Fizike\" src=\"\/wp-content\/uploads\/2020\/03\/53a8762b0e7cec9b6ebdf5fb91e9b328.png\" style=\"display:block;margin: 0 auto;\" \/><br \/>\nPas shtat\u00eb vjet\u00ebsh, Fujio Masuoka zhvilloi Flash-memorin\u00eb e tipit NAND. Ky lloj memorie ndryshon n\u00eb sasin\u00eb e tranzistor\u00ebve n\u00eb linj\u00ebn e bitit. N\u00eb memorien e tipit NOR \u00e7do tranzistor \u00ebsht\u00eb i lidhur drejtp\u00ebrdrejt me linj\u00ebn e bitit, nd\u00ebrsa n\u00eb memorien NAND, tranzistor\u00ebt jan\u00eb t\u00eb lidhur n\u00eb seri.<\/p>\n<p><img decoding=\"async\" alt=\"Hyrja n\u00eb SSD. Pjesa 4. Fizike\" src=\"\/wp-content\/uploads\/2020\/03\/14db892a94f6bf36fe3f9dc8f5ad76c3.png\" style=\"display:block;margin: 0 auto;\" \/><br \/>\nLeximi nga memoria e till\u00eb \u00ebsht\u00eb m\u00eb i nd\u00ebrlikuar: n\u00eb linj\u00ebn e fjal\u00ebs s\u00eb nevojshme aplikohet tensioni i nevojsh\u00ebm p\u00ebr t\u00eb lexuar, nd\u00ebrsa n\u00eb t\u00eb gjitha linjat e tjera t\u00eb fjal\u00ebve aplikohet tensioni q\u00eb hap tranzistorin, pavar\u00ebsisht nga niveli i ngarkes\u00ebs n\u00eb t\u00eb. Duke qen\u00eb se t\u00eb gjith\u00eb tranzistor\u00ebt e tjer\u00eb jan\u00eb t\u00eb hapur me siguri, prania e tensionit n\u00eb linj\u00ebn e bit\u00ebve varet vet\u00ebm nga nj\u00eb tranzistor, t\u00eb cilit i \u00ebsht\u00eb aplikuar tensioni i leximit.<\/p>\n<p>Zbulimi i memories Flash t\u00eb tipit NAND lejon nj\u00eb komprimim t\u00eb konsideruesh\u00ebm t\u00eb skem\u00ebs, duke vendosur nj\u00eb volum m\u00eb t\u00eb madh t\u00eb memories n\u00eb t\u00eb nj\u00ebjtat p\u00ebrmasa. Deri n\u00eb vitin 2007, volumi i memories u rrit me an\u00eb t\u00eb zvog\u00eblimit t\u00eb procesit t\u00eb prodhimit t\u00eb \u00e7ipit.<\/p>\n<p>N\u00eb vitin 2007, kompania Toshiba paraqiti nj\u00eb version t\u00eb ri t\u00eb memories NAND: <b>Vertical NAND (V-NAND)<\/b>, i njohur gjithashtu si <b>3D NAND<\/b>. N\u00eb k\u00ebt\u00eb teknologji, theksi \u00ebsht\u00eb n\u00eb vendosjen e tranzistor\u00ebve n\u00eb disa shtresa, gj\u00eb q\u00eb p\u00ebrs\u00ebri lejon kompresimin e skem\u00ebs dhe rritjen e volumit t\u00eb memories. Sidoqoft\u00eb, kompresimi i skem\u00ebs nuk mund t\u00eb p\u00ebrs\u00ebritet n\u00eb pafund\u00ebsi, prandaj u hulumtuan metoda t\u00eb tjera p\u00ebr t\u00eb rritur volumin e ruajtur t\u00eb memories.<\/p>\n<p><img decoding=\"async\" alt=\"Hyrja n\u00eb SSD. Pjesa 4. Fizike\" src=\"\/wp-content\/uploads\/2020\/03\/11bbf1b13a91ae464c305fac941218ec.png\" style=\"display:block;margin: 0 auto;\" \/><br \/>\nFillimisht, \u00e7do transistor ruante dy nivele ngarkese: zero logjike dhe nj\u00ebsi logjike. Ky qasje quhet <b>Single-Level Cell (SLC)<\/b>. Disqet me k\u00ebt\u00eb teknologji dallohen p\u00ebr besueshm\u00ebrin\u00eb e lart\u00eb dhe numrin maksimal t\u00eb cikleve t\u00eb ri-shkruarjes.<\/p>\n<p>Me kalimin e koh\u00ebs, u mor nj\u00eb vendim p\u00ebr t\u00eb rritur volumin e disqeve me \u00e7mimin e q\u00ebndrueshm\u00ebris\u00eb. K\u00ebshtu, numri i niveleve t\u00eb ngarkes\u00ebs n\u00eb nj\u00eb qeliz\u00eb arriti deri n\u00eb kat\u00ebr, dhe teknologjia u quajt <b>Multi-Level Cell (MLC)<\/b>. Pas saj, u shfaq\u00ebn <b>Triple-Level Cell (TLC)<\/b> dhe <b>Quad-Level Cell (QLC)<\/b>. N\u00eb t\u00eb ardhmen do t\u00eb dal\u00eb nj\u00eb nivel i ri \u2014 <b>Celula Penta-Level (PLC)<\/b> me pes\u00eb bit\u00eb n\u00eb nj\u00eb qelis\u00eb. Sa m\u00eb shum\u00eb bits t\u00eb vendosen n\u00eb nj\u00eb qelis\u00eb, aq m\u00eb shum\u00eb kapacitet ruajt\u00ebs me t\u00eb nj\u00ebjt\u00ebn kosto, por m\u00eb pak q\u00ebndrushm\u00ebri.<\/p>\n<p>Shtypja e skemave me reduktimin e procesit teknologjik dhe rritjen e numrit t\u00eb bit\u00ebve n\u00eb nj\u00eb transistor ndikon negativisht n\u00eb t\u00eb dh\u00ebnat e ruajtura. Megjith\u00ebse EPROM dhe EEPROM p\u00ebrdorin t\u00eb nj\u00ebjt\u00ebt transistor\u00eb, EPROM dhe EEPROM mund t\u00eb ruajn\u00eb t\u00eb dh\u00ebna pa energji p\u00ebr dhjet\u00eb vjet, nd\u00ebrsa memoria moderne Flash mund t\u00eb \"harroj\u00eb\" gjith\u00e7ka brenda nj\u00eb viti.<\/p>\n<blockquote><p>P\u00ebrdorimi i memorie Flash n\u00eb industrin\u00eb hap\u00ebsinore \u00ebsht\u00eb i v\u00ebshtir\u00eb, sepse radiacioni ndikon negativisht n\u00eb elektronet n\u00eb portat fluturuese.<\/p><\/blockquote>\n<p>Problemet e p\u00ebrmendura pengojn\u00eb Flash-n\u00eb t\u00eb jet\u00eb lideri i pand\u00ebrprer\u00eb n\u00eb fush\u00ebn e ruajtjes s\u00eb informacionit. Megjithat\u00eb, nd\u00ebrsa magazinat q\u00eb bazohen n\u00eb Flash jan\u00eb t\u00eb p\u00ebrhapura gjer\u00ebsisht, po kryhen k\u00ebrkime mbi lloje t\u00eb tjera memorie q\u00eb nuk kan\u00eb k\u00ebto disavantazhe, p\u00ebrfshir\u00eb ruajtjen e informacionit n\u00eb momentet magnetike dhe gjendjet fazore.<\/p>\n<h2>Memoria magnetorrezistive<\/h2>\n<p>\n<noindex><a rel=\"nofollow\" href=\"https:\/\/www.youtube.com\/watch?v=lne8r2mIwuA\"><img decoding=\"async\" alt=\"Hyrja n\u00eb SSD. Pjesa 4. Fizike\" src=\"\/wp-content\/uploads\/2020\/03\/12ad7d4ed598506d78199c56e91a3831.png\" style=\"display:block;margin: 0 auto;\" \/><\/a><\/noindex><br \/>\nKodimi i informacionit me momentet magnetike filloi n\u00eb vitin 1955 si memorie n\u00eb b\u00ebrtham\u00eb magnetike. Deri n\u00eb mes t\u00eb viteve 1970, memoria ferrite ishte lloji kryesor i memories. Leximi i nj\u00eb bini nga memoria e k\u00ebtij lloji \u00e7onte n\u00eb demagnetizimin e rripit dhe humbjen e informacionit. Prandaj, pas leximit t\u00eb nj\u00eb bini, ishte e nevojshme ta shkruanonit p\u00ebrs\u00ebri.<\/p>\n<p>N\u00eb zhvillimet moderne t\u00eb memories magnetoresistive p\u00ebrdoren dy shtresa ferromagnetike, t\u00eb ndara nga nj\u00eb dielektrik, n\u00eb vend t\u00eb rripave. Nj\u00eb shtres\u00eb \u00ebsht\u00eb nj\u00eb magnet i p\u00ebrhersh\u00ebm, nd\u00ebrsa tjetra ndryshon drejtimin e magnetizimit. Leximi i nj\u00eb bini nga nj\u00eb qeliz\u00eb e till\u00eb reduktohet n\u00eb matjen e rezistenc\u00ebs gjat\u00eb kalimit t\u00eb nj\u00eb rryme: n\u00ebse shtresat jan\u00eb magnetizuar n\u00eb drejtime t\u00eb kund\u00ebrta, at\u00ebher\u00eb rezistenca \u00ebsht\u00eb m\u00eb e madhe dhe kjo \u00ebsht\u00eb ekuivalente me vler\u00ebn \"1\".<\/p>\n<p>Memoria ferrite nuk k\u00ebrkon nj\u00eb burim t\u00eb p\u00ebrhersh\u00ebm energjie p\u00ebr t\u00eb mbajtur informacionin e shkruar, megjithat\u00eb fusha magnetike e qeliz\u00ebs mund t\u00eb ndikoj\u00eb n\u00eb \"fqinjin\", duke vendosur k\u00ebshtu nj\u00eb kufizim n\u00eb dend\u00ebsin\u00eb e skem\u00ebs.<\/p>\n<blockquote><p>Sipas <noindex><a rel=\"nofollow\" href=\"https:\/\/www.jedec.org\/sites\/default\/files\/Alvin_Cox%20%5BCompatibility%20Mode%5D_0.pdf\">JEDEC<\/a><\/noindex> Disqet SSD me baz\u00eb Flash pa energji duhet t\u00eb ruajn\u00eb informacionin p\u00ebr t\u00eb pakt\u00ebn tre muaj n\u00eb temperatur\u00ebn e ambientit 40\u00b0\u0421. Kjo \u00ebsht\u00eb zhvilluar nga Intel. <noindex><a rel=\"nofollow\" href=\"https:\/\/3dnews.ru\/983125\">\u00e7ipi me baz\u00eb n\u00eb memorie magnetorresistive<\/a><\/noindex> premton t\u00eb ruaj\u00eb t\u00eb dh\u00ebnat p\u00ebr dhjet\u00eb vjet n\u00eb temperatur\u00ebn 200\u00b0\u0421.<\/p><\/blockquote>\n<p>Pavar\u00ebsisht v\u00ebshtir\u00ebsis\u00eb s\u00eb zhvillimit, memoria magnetorresistive nuk degradohet gjat\u00eb p\u00ebrdorimit dhe ka performanc\u00eb m\u00eb t\u00eb mir\u00eb nd\u00ebr llojet e tjera t\u00eb memories, duke e b\u00ebr\u00eb k\u00ebt\u00eb lloj memorie t\u00eb padiskutuesh\u00ebm.<\/p>\n<h2>Memoria me ndryshim fazor<\/h2>\n<p>\nLloji i tret\u00eb i perspektiv\u00ebs s\u00eb memories \u2014 memoria me baz\u00eb n\u00eb kalimin fazor. Ky lloj memorie shfryt\u00ebzon pronat e chalcojenideve p\u00ebr t\u00eb ndryshuar mes gjendjes kristalizuese dhe amorfe kur ngrohet.<\/p>\n<blockquote><p><b>Chalcojenid\u00eb<\/b> \u2014 disa lidhje binare t\u00eb metalit me grupin 16 (grupi i 6-t\u00eb t\u00eb n\u00ebn-grupit kryesor) t\u00eb tabel\u00ebs periodike t\u00eb Mendeleev-it. P\u00ebr shembull, n\u00eb disqet CD-RW, DVD-RW, DVD-RAM dhe Blu-ray p\u00ebrdoren telluridi i germaniumit (GeTe) dhe telluridi i antimonit (III) (Sb2Te3).<\/p><\/blockquote>\n<p>Studimet p\u00ebr p\u00ebrdorimin e kalimit fazor p\u00ebr ruajtjen e informacionit jan\u00eb kryer n\u00eb <b>vitet 1960<\/b> n\u00eb vitin 2000, Stanford Ovshinsky, por at\u00ebher\u00eb nuk u arrit n\u00eb realizimin komercial. N\u00eb vitet 2000, interesimi p\u00ebr teknologjin\u00eb u rikthye, Samsung patentoi nj\u00eb teknologji q\u00eb lejonte kalimin e nj\u00eb biti p\u00ebr 5 ns, nd\u00ebrsa Intel dhe STMicroelectronics rrit\u00ebn numrin e q\u00ebndronjave n\u00eb kat\u00ebr, duke rritur k\u00ebshtu volumin e mundsh\u00ebm me dyfish.<\/p>\n<p>Kur ngrohet mbi pik\u00ebn e shkrirjes, halkanidi humbet struktur\u00ebn kristalore dhe, kur ftohet, shnd\u00ebrrohet n\u00eb nj\u00eb form\u00eb amorfe q\u00eb karakterizohet nga nj\u00eb rezistenc\u00eb elektrike e lart\u00eb. Nga ana tjet\u00ebr, kur ngrohet deri n\u00eb temperatur\u00ebn mbi pik\u00ebn e kristalizimit, por n\u00ebn pik\u00ebn e shkrirjes, halkanidi rikthehet n\u00eb gjendjen kristalore me nj\u00eb nivel t\u00eb ul\u00ebt rezistence.<\/p>\n<p>Memoria me kalim fazor nuk k\u00ebrkon \"rimbushje\" me kalimin e koh\u00ebs dhe nuk \u00ebsht\u00eb e ndjeshme ndaj rrezatimit, n\u00eb kund\u00ebrshtim me memorjen n\u00eb ngarkesa elektrike. Ky lloj memorje mund t\u00eb ruaj\u00eb informacionin deri n\u00eb 300 vjet n\u00eb temperatur\u00ebn 85\u00b0C.<\/p>\n<p>Mendohet se zhvillimi i Intel, teknologjia <b>3D Crosspoint (3D XPoint)<\/b> p\u00ebrdor pik\u00ebrisht kalimet fazore p\u00ebr t\u00eb ruajtur informacionin. 3D XPoint p\u00ebrdoret n\u00eb dep\u00ebrtuesit Intel&reg; Optane&trade; Memory, p\u00ebr t\u00eb cil\u00ebt \u00ebsht\u00eb shpallur nj\u00eb q\u00ebndrushm\u00ebri e lart\u00eb ndaj konsumit.<\/p>\n<h2>P\u00ebrfundimi<\/h2>\n<p>\nDispositivi fizik i mbajt\u00ebsve t\u00eb gjendjes t\u00eb ngurt\u00eb ka kaluar shum\u00eb ndryshime p\u00ebr m\u00eb shum\u00eb se nj\u00eb gjysm\u00eb shekulli, megjithat\u00eb, secila nga zgjidhjet ka disavantazhet e saj. Pavar\u00ebsisht popullaritetit t\u00eb pakontestuesh\u00ebm t\u00eb memorjes Flash, disa kompani, p\u00ebrfshir\u00eb Samsung dhe Intel, po punojn\u00eb p\u00ebr t\u00eb krijuar memorie me momente magnetike.<\/p>\n<p>Reducimi i konsumit t\u00eb qelizave, ngjeshja e tyre dhe rritja e kapacitetit t\u00eb p\u00ebrgjithsh\u00ebm t\u00eb mbajt\u00ebsit jan\u00eb drejtimet q\u00eb aktualisht konsiderohen t\u00eb perspektivshme p\u00ebr zhvillimin e m\u00ebtejsh\u00ebm t\u00eb mbajt\u00ebsve t\u00eb gjendjes t\u00eb ngurt\u00eb.<\/p>\n<blockquote><p>Mund t\u00eb testoni mbajt\u00ebsit m\u00eb t\u00eb mrekulluesh\u00ebm t\u00eb NAND dhe 3D XPoint tani n\u00eb <noindex><a rel=\"nofollow\" href=\"http:\/\/slc.tl\/S-MoX\">Selectel LAB<\/a><\/noindex>.<\/p><\/blockquote>\n<p>Si mendoni, a do t\u00eb z\u00ebvend\u00ebsohen teknologjit\u00eb e ruajtjes s\u00eb informacionit mbi ngarkesat elektrike me t\u00eb tjerat, si\u00e7 jan\u00eb disk\u00ebt e qelqit apo memorie optike me nanokristale krip\u00eb?<br \/>\n<br \/>Burimi: <a content=\"nofollow\" rel=\"nofollow\" href=\"https:\/\/habr.com\/ru\/company\/selectel\/blog\/491264\/\">habr.com<\/a> <\/p>","protected":false,"gt_translate_keys":[{"key":"rendered","format":"html"}]},"excerpt":{"rendered":"<p>\u041f\u0440\u043e\u0448\u043b\u044b\u0435 \u0447\u0430\u0441\u0442\u0438 \u0446\u0438\u043a\u043b\u0430 \u00ab\u0412\u0432\u0435\u0434\u0435\u043d\u0438\u0435 \u0432 SSD\u00bb \u043f\u043e\u0432\u0435\u0434\u0430\u043b\u0438 \u0447\u0438\u0442\u0430\u0442\u0435\u043b\u044e \u043f\u0440\u043e \u0438\u0441\u0442\u043e\u0440\u0438\u044e \u043f\u043e\u044f\u0432\u043b\u0435\u043d\u0438\u044f SSD-\u043d\u0430\u043a\u043e\u043f\u0438\u0442\u0435\u043b\u0435\u0439, \u0438\u043d\u0442\u0435\u0440\u0444\u0435\u0439\u0441\u044b \u0432\u0437\u0430\u0438\u043c\u043e\u0434\u0435\u0439\u0441\u0442\u0432\u0438\u044f \u0441 \u043d\u0438\u043c\u0438 \u0438 \u043f\u043e\u043f\u0443\u043b\u044f\u0440\u043d\u044b\u0435 \u0444\u043e\u0440\u043c-\u0444\u0430\u043a\u0442\u043e\u0440\u044b. \u0427\u0435\u0442\u0432\u0451\u0440\u0442\u0430\u044f \u0447\u0430\u0441\u0442\u044c \u0440\u0430\u0441\u0441\u043a\u0430\u0436\u0435\u0442 \u043e \u0445\u0440\u0430\u043d\u0435\u043d\u0438\u0438 \u0434\u0430\u043d\u043d\u044b\u0445 \u0432\u043d\u0443\u0442\u0440\u0438 \u043d\u0430\u043a\u043e\u043f\u0438\u0442\u0435\u043b\u0435\u0439. \u0412 \u043f\u0440\u0435\u0434\u044b\u0434\u0443\u0449\u0438\u0445 \u0441\u0442\u0430\u0442\u044c\u044f\u0445 \u0446\u0438\u043a\u043b\u0430: \u0418\u0441\u0442\u043e\u0440\u0438\u044f \u0441\u043e\u0437\u0434\u0430\u043d\u0438\u044f HDD \u0438 SSD \u0412\u043e\u0437\u043d\u0438\u043a\u043d\u043e\u0432\u0435\u043d\u0438\u0435 \u0438\u043d\u0442\u0435\u0440\u0444\u0435\u0439\u0441\u043e\u0432 \u043d\u0430\u043a\u043e\u043f\u0438\u0442\u0435\u043b\u0435\u0439 \u041e\u0441\u043e\u0431\u0435\u043d\u043d\u043e\u0441\u0442\u0438 \u0444\u043e\u0440\u043c-\u0444\u0430\u043a\u0442\u043e\u0440\u043e\u0432 \u0425\u0440\u0430\u043d\u0435\u043d\u0438\u0435 \u0434\u0430\u043d\u043d\u044b\u0445 \u0432 \u0442\u0432\u0435\u0440\u0434\u043e\u0442\u0435\u043b\u044c\u043d\u044b\u0445 \u043d\u0430\u043a\u043e\u043f\u0438\u0442\u0435\u043b\u044f\u0445 \u043c\u043e\u0436\u043d\u043e \u0440\u0430\u0437\u0434\u0435\u043b\u0438\u0442\u044c \u043d\u0430 \u0434\u0432\u0435 \u043b\u043e\u0433\u0438\u0447\u0435\u0441\u043a\u0438\u0435 \u0447\u0430\u0441\u0442\u0438: \u0445\u0440\u0430\u043d\u0435\u043d\u0438\u0435 \u0438\u043d\u0444\u043e\u0440\u043c\u0430\u0446\u0438\u0438 \u0432 [&hellip;]<\/p>\n","protected":false,"gt_translate_keys":[{"key":"rendered","format":"html"}]},"author":1,"featured_media":73398,"comment_status":"open","ping_status":"open","sticky":false,"template":"","format":"standard","meta":{"footnotes":""},"categories":[688],"tags":[],"class_list":["post-73397","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-administrirovanie"],"aioseo_notices":[],"aioseo_head":"\n\t\t<!-- All in One SEO 5.0.0.1 - 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