{"id":73397,"date":"2020-03-09T08:42:28","date_gmt":"2020-03-09T05:42:28","guid":{"rendered":"https:\/\/prohoster.info\/blog\/administrirovanie\/vvedenie-v-ssd-chast-4-fizicheskaya"},"modified":"2020-03-09T08:42:28","modified_gmt":"2020-03-09T05:42:28","slug":"vvedenie-v-ssd-chast-4-fizicheskaya","status":"publish","type":"post","link":"https:\/\/prohoster.info\/sq\/blog\/administrirovanie\/vvedenie-v-ssd-chast-4-fizicheskaya","title":{"rendered":"Hyrje n\u00eb SSD. Pjesa 4. Fizike","gt_translate_keys":[{"key":"rendered","format":"text"}]},"content":{"rendered":"<p><img decoding=\"async\" alt=\"Hyrje n\u00eb SSD. Pjesa 4. Fizike\" src=\"\/wp-content\/uploads\/2020\/03\/07ee6f41981982df22293878e6c6d99a.png\" style=\"display:block;margin: 0 auto;\" \/><br \/>\nPjes\u00ebt e kaluara t\u00eb ciklit \u00abHyrja n\u00eb SSD\u00bb i than\u00eb lexuesit p\u00ebr historin\u00eb e shfaqjes s\u00eb SSD-ve, nd\u00ebrfaqet e komunikimit me to dhe format e njohura. Pjesa e kat\u00ebrt do t\u00eb flas\u00eb p\u00ebr ruajtjen e t\u00eb dh\u00ebnave brenda disqeve.<br \/>\n<noindex><a rel=\"nofollow\" name=\"habracut\"><\/a><\/noindex><br \/>\n<i>N\u00eb artikujt e m\u00ebparsh\u00ebm t\u00eb ciklit:<\/i><\/p>\n<ol>\n<li><i><noindex><a rel=\"nofollow\" href=\"https:\/\/habr.com\/ru\/company\/selectel\/blog\/475304\/\">Historia e krijimit t\u00eb HDD dhe SSD<\/a><\/noindex><\/i><\/li>\n<li><i><noindex><a rel=\"nofollow\" href=\"https:\/\/habr.com\/ru\/company\/selectel\/blog\/478684\/\">Shfaqja e nd\u00ebrfaqeve t\u00eb disqeve<\/a><\/noindex><\/i><\/li>\n<li><i><noindex><a rel=\"nofollow\" href=\"https:\/\/habr.com\/ru\/company\/selectel\/blog\/488230\/\">Karakteristikat e formateve<\/a><\/noindex><\/i><\/li>\n<\/ol>\n<p>\nRuajtja e t\u00eb dh\u00ebnave n\u00eb SSD-t\u00eb mund t\u00eb ndahet n\u00eb dy pjes\u00eb logjike: ruajtja e informacionit n\u00eb nj\u00eb qeliz\u00eb dhe organizimi i ruajtjes s\u00eb qelizave.<\/p>\n<p>\u00c7do qeliz\u00eb e SSD ruan <b>nj\u00eb ose disa bita informacioni<\/b>. P\u00ebr ruajtjen e informacionit p\u00ebrdoren procese t\u00eb ndryshme <b>fizike<\/b>. Gjat\u00eb zhvillimit t\u00eb SSD-ve jan\u00eb shqyrtuar k\u00ebto sasi fizike p\u00ebr kodimin e informacionit:<\/p>\n<ul>\n<li><b>ngarkesa elektrike<\/b> (duke p\u00ebrfshir\u00eb memorien Flash);<\/li>\n<li><b>momentet magnetike<\/b> (memoria magnetorezistive);<\/li>\n<li><b>gjendjet fazore<\/b> (memoria me ndryshim gjendjeje fazore).<\/li>\n<\/ul>\n<p><\/p>\n<h2>Memoria e bazuar n\u00eb ngarkesa elektrike<\/h2>\n<p>\nKodimi i informacionit p\u00ebrmes ngarkes\u00ebs negative \u00ebsht\u00eb n\u00eb thelb t\u00eb disa zgjidhjeve:<\/p>\n<ul>\n<li>memoria e fshirshme me ultraviolet (EPROM);<\/li>\n<li>memoria e fshirshme elektrikisht (EEPROM);<\/li>\n<li>Flash memoria.<\/li>\n<\/ul>\n<p>\n<img decoding=\"async\" alt=\"Hyrje n\u00eb SSD. Pjesa 4. Fizike\" src=\"\/wp-content\/uploads\/2020\/03\/8859aa8e143aeefc0a33f8255f1708f3.png\" style=\"display:block;margin: 0 auto;\" \/><br \/>\n\u00c7do qeliz\u00eb memorike \u00ebsht\u00eb nj\u00eb <b>transistor MOSFET me nj\u00eb kapak fluturues<\/b>, ku ruhet ngarkesa negative. Dallimi i saj nga nj\u00eb transistor MOSFET i zakonsh\u00ebm \u00ebsht\u00eb pranimi i kapakut fluturues \u2014 nj\u00eb p\u00ebrcjell\u00ebs n\u00eb nj\u00eb shtres\u00eb dielektrike.<\/p>\n<p>Me krijimin e diferenc\u00ebs s\u00eb potencialeve midis drenuesit dhe burimit dhe me nj\u00eb potencial pozitiv n\u00eb kapak, do t\u00eb ket\u00eb rrjedhje t\u00eb energjis\u00eb nga burimi te drenuesi. Megjithat\u00eb, me nj\u00eb diferenc\u00eb t\u00eb mjaftueshme potencialesh, disa elektrone \u00abkalojn\u00eb\u00bb shtres\u00ebn dielektrike dhe mb\u00ebrrijn\u00eb n\u00eb kapakun fluturues. Ky fenomen quhet <noindex><a rel=\"nofollow\" href=\"https:\/\/ru.wikipedia.org\/wiki\/%D0%A2%D1%83%D0%BD%D0%BD%D0%B5%D0%BB%D1%8C%D0%BD%D1%8B%D0%B9_%D1%8D%D1%84%D1%84%D0%B5%D0%BA%D1%82\">efekti tunel<\/a><\/noindex>.<\/p>\n<p><img decoding=\"async\" alt=\"Hyrje n\u00eb SSD. Pjesa 4. Fizike\" src=\"\/wp-content\/uploads\/2020\/03\/7b6141b5e53940bcc073a3ee1c327eec.png\" style=\"display:block;margin: 0 auto;\" \/><br \/>\nKapa fluturuese e ngarkuar negativisht krijon nj\u00eb fush\u00eb elektrike q\u00eb pengon rrjedhjen e energjis\u00eb nga burimi te drenuesi. P\u00ebr m\u00eb tep\u00ebr, pranimi i elektroneve n\u00eb kapakun fluturues rrit tensionin prag, n\u00eb t\u00eb cilin transistor mbetet i hapur. Me \u00e7do \u00abshkrim\u00bb n\u00eb kapakun fluturues t\u00eb transistorit, shtresa dielektrike d\u00ebmtohet pak, q\u00eb kufizon numrin e cikle t\u00eb riprogramimit t\u00eb \u00e7do qelize.<\/p>\n<blockquote><p>Transistor\u00ebt MOSFET me shk\u00ebmbim fluturues u zhvilluan nga Dawon Kahng dhe Simon Min Sze n\u00eb Bell Labs n\u00eb vitin 1967. M\u00eb von\u00eb, gjat\u00eb hetimeve t\u00eb defekteve n\u00eb qarqet integruese, u v\u00ebrejt se shkaku i ngarkes\u00ebs n\u00eb shk\u00ebmbinj u ndryshua tensioni i pragut q\u00eb aktivizonte transistorin. Ky zbulim inkurajoi Dov Frohmanin t\u00eb fillonte pun\u00ebn mbi memorjen bazuar n\u00eb k\u00ebt\u00eb fenomen.<\/p><\/blockquote>\n<p>Ndryshimi i tensionit t\u00eb pragut lejon 'programimin' e transistor\u00ebve. Transistor\u00ebt me ngarkes\u00eb n\u00eb shk\u00ebmbinj fluturues nuk do t\u00eb aktivizohen kur aplikohet nj\u00eb tension mbi pragun p\u00ebr transistor\u00eb pa elektrona, por n\u00ebn pragun p\u00ebr transistor\u00ebt me elektrona. Le t\u00eb quajm\u00eb k\u00ebt\u00eb vler\u00eb <b>tensioni i leximit<\/b>.<\/p>\n<h3>Memoria e Programueshme e Fshirshme vet\u00eb (EPROM)<\/h3>\n<p>\n<noindex><a rel=\"nofollow\" href=\"https:\/\/ru.wikipedia.org\/wiki\/EPROM\"><img decoding=\"async\" alt=\"Hyrje n\u00eb SSD. Pjesa 4. Fizike\" src=\"\/wp-content\/uploads\/2020\/03\/bfe650362b93b530401453130147d679.png\" style=\"display:block;margin: 0 auto;\" \/><\/a><\/noindex><br \/>\nN\u00eb vitin 1971, punonj\u00ebsi i Intelit, Dov Frohman, krijoi memorjen e rishkruer me transistor\u00eb, t\u00eb quajtur <b>Memoria e Programueshme e Fshirshme vet\u00eb (EPROM)<\/b>. Shkruajtja n\u00eb memorje u krye p\u00ebrmes nj\u00eb pajisjeje t\u00eb ve\u00e7ant\u00eb \u2014 programatorit. Programatori aplikon nj\u00eb tension m\u00eb t\u00eb lart\u00eb mbi \u00e7ipin se sa aplikohet n\u00eb qarqet dixhitale, duke 'shkruar' elektrona n\u00eb shk\u00ebmbinjt\u00eb fluturues t\u00eb transistor\u00ebve ku \u00ebsht\u00eb e nevojshme.<\/p>\n<p><noindex><a rel=\"nofollow\" href=\"https:\/\/ru.wikipedia.org\/wiki\/EPROM\"><img decoding=\"async\" alt=\"Hyrje n\u00eb SSD. Pjesa 4. Fizike\" src=\"\/wp-content\/uploads\/2020\/03\/959b0d6bac92dafb1eb4aa46ea03952c.png\" style=\"display:block;margin: 0 auto;\" \/><\/a><\/noindex><br \/>\nN\u00eb memorjen EPROM nuk ishte e parashikuar pastrimi elektrik i shk\u00ebmbinjve fluturues t\u00eb transistor\u00ebve. N\u00eb vend t\u00eb k\u00ebsaj, propozimi ishte t\u00eb ndikohej n\u00eb transistor\u00eb me rrezatim t\u00eb fort\u00eb ultraviolet, foton\u00ebt e t\u00eb cil\u00ebve japin energji elektroneve, energji e nevojshme p\u00ebr t\u00eb l\u00ebn\u00eb shk\u00ebmbin fluturues. P\u00ebr t\u00eb lejuar hyrjen e ultravioletit n\u00eb brend\u00ebsi t\u00eb \u00e7ipit, ishte shtuar qelqi i kuarcit n\u00eb kapak.<\/p>\n<p><noindex><a rel=\"nofollow\" href=\"https:\/\/newsroom.intel.com\/news\/intel-50-qa-intels-dov-frohman-inventor-eprom\/#gs.wum63d\"><img decoding=\"async\" alt=\"Hyrje n\u00eb SSD. Pjesa 4. Fizike\" src=\"\/wp-content\/uploads\/2020\/03\/725b3ed07b0a5c5ceb285f6b7e234f08.png\" style=\"display:block;margin: 0 auto;\" \/><\/a><\/noindex><\/p>\n<blockquote><p>Frohman e paraqiti p\u00ebr her\u00eb t\u00eb par\u00eb prototipin e EPROM n\u00eb shkurt 1971 n\u00eb nj\u00eb konferenc\u00eb mbi mikro\u00e7ipet n\u00eb Filadelfia. Gordon Moore kujton demonstrimin: 'Dov demonstroi nj\u00eb model bitesh n\u00eb qelizat e memories EPROM. Kur qelizat ndikoheshin nga drita ultraviolet, bitet zhdukeshin nj\u00eb nga nj\u00eb, derisa logoja e njohur e Intel it u fshi plot\u00ebsisht. ... Bitet po zhdukeshin, dhe kur i fundit u zhduk, e gjith\u00eb audienca shp\u00ebrtheu n\u00eb duar konfeti. Artikulli i Dov ishte shpallur m\u00eb i miri n\u00eb konferenc\u00eb.'<i> \u2014 P\u00ebrkthimi i artikullit <noindex><a rel=\"nofollow\" href=\"https:\/\/newsroom.intel.com\/news\/intel-at-50-erasable-programmable-read-only-memory\">newsroom.intel.com<\/a><\/noindex><\/i><\/p><\/blockquote>\n<p>Memoria EPROM \u00ebsht\u00eb m\u00eb e shtrenjt\u00eb se pajisjet e m\u00ebparshme t\u00eb kujtes\u00ebs statike \"t\u00eb nj\u00eb p\u00ebrdorimi\", por mund\u00ebsia e riprogramimit lejon rregullimin m\u00eb t\u00eb shpejt\u00eb t\u00eb skemave dhe zvog\u00eblon koh\u00ebn e zhvillimit t\u00eb hardware-it t\u00eb ri.<\/p>\n<p>Riprogramimi i memoris\u00eb statike t\u00eb leximit t\u00eb vet\u00ebm me drit\u00eb ultraviolet ishte nj\u00eb p\u00ebrparim i r\u00ebnd\u00ebsish\u00ebm, megjithat\u00eb, ideja e riprogramimit elektrik ishte tashm\u00eb n\u00eb aj\u00ebr.<\/p>\n<h3>Memorie e Leximit t\u00eb vet\u00ebm e Riprogramueshme Elektrikisht<\/h3>\n<p>\nN\u00eb vitin 1972, tre japonez\u00eb: Yasuo Tarui, Yutaka Hayashi dhe Kiyoko Nagai prezantuan pajisjen e par\u00eb t\u00eb kujtes\u00ebs q\u00eb fshihet elektrikisht (Memorie e Leximit t\u00eb vet\u00ebm e Riprogramueshme Elektrikisht, EEPROM ose E2PROM). M\u00eb von\u00eb, k\u00ebrkimet e tyre shkencore do t\u00eb b\u00ebhen pjes\u00eb e patenteve p\u00ebr implementime komerciale t\u00eb memorie EEPROM.<\/p>\n<p>\u00c7do qeliz\u00eb e memoris\u00eb EEPROM p\u00ebrb\u00ebhet nga disa transistor\u00eb:<\/p>\n<ul>\n<li>Transistori me nj\u00eb grusht t\u00eb l\u00ebvizsh\u00ebm p\u00ebr ruajtjen e bitit;<\/li>\n<li>Transistori p\u00ebr kontrollin e modit t\u00eb leximit-shkrimit.<\/li>\n<\/ul>\n<p>\nKjo konstrukcion e komplikon shum\u00eb shtrirjen e skem\u00ebs elektrike, prandaj memoria EEPROM ishte p\u00ebrdorur n\u00eb raste kur volumi i vog\u00ebl i kujtes\u00ebs nuk ishte kritik. P\u00ebr ruajtjen e nj\u00eb volume t\u00eb madhe t\u00eb dh\u00ebnash, prap\u00eb p\u00ebrdorej memoria EPROM.<\/p>\n<h3>Memoria Flash<\/h3>\n<p>\nMemoria Flash, q\u00eb kombinon karakteristikat m\u00eb t\u00eb mira t\u00eb EPROM dhe EEPROM, u zhvillua nga profesori japonez Fujio Masuoka, inxhinier i kompanis\u00eb Toshiba, n\u00eb vitin 1980. Zhvillimi i par\u00eb u quajt memoria Flash e tipit NOR dhe si paraardh\u00ebsit e saj, bazohej n\u00eb transistor\u00ebt MOSFET me nj\u00eb grusht t\u00eb l\u00ebvizsh\u00ebm.<\/p>\n<p><img decoding=\"async\" alt=\"Hyrje n\u00eb SSD. Pjesa 4. Fizike\" src=\"\/wp-content\/uploads\/2020\/03\/afb642e62142301a0430736f88a747a9.png\" style=\"display:block;margin: 0 auto;\" \/><br \/>\nMemoria Flash e tipit NOR \u00ebsht\u00eb nj\u00eb matric\u00eb dy-dimensionale e transistor\u00ebve. Grushtat e transistor\u00ebve jan\u00eb t\u00eb lidhura me linj\u00ebn e fjal\u00ebve, nd\u00ebrsa drenazhet - me linj\u00ebn e bit\u00ebve. Kur aplikohet tension n\u00eb linj\u00ebn e fjal\u00ebve, transistor\u00ebt q\u00eb p\u00ebrmbajn\u00eb elektrone, dmth q\u00eb ruajn\u00eb \"nj\u00ebsin\u00eb\", nuk do t\u00eb hapen dhe aktuali nuk do t\u00eb rrjedh\u00eb. Nga prania ose mungesa e aktualit n\u00eb linj\u00ebn e bit\u00ebve, nxirret p\u00ebrfundimi p\u00ebr vler\u00ebn e bitit.<\/p>\n<p><img decoding=\"async\" alt=\"Hyrje n\u00eb SSD. Pjesa 4. Fizike\" src=\"\/wp-content\/uploads\/2020\/03\/53a8762b0e7cec9b6ebdf5fb91e9b328.png\" style=\"display:block;margin: 0 auto;\" \/><br \/>\nShtat\u00eb vjet m\u00eb von\u00eb, Fujio Masuoka zhvilloi memorien Flash t\u00eb tipit NAND. Ky tip memorie ndryshon nga numri i transistor\u00ebve n\u00eb linj\u00ebn e bitit. N\u00eb memorien e tipit NOR, \u00e7do transistor \u00ebsht\u00eb lidhur drejtp\u00ebrdrejt me linj\u00ebn e bitit, nd\u00ebrsa n\u00eb memorien NAND, transistor\u00ebt jan\u00eb lidhur n\u00eb seri.<\/p>\n<p><img decoding=\"async\" alt=\"Hyrje n\u00eb SSD. Pjesa 4. Fizike\" src=\"\/wp-content\/uploads\/2020\/03\/14db892a94f6bf36fe3f9dc8f5ad76c3.png\" style=\"display:block;margin: 0 auto;\" \/><br \/>\nT\u00eb lexosh nga memoria e till\u00eb \u00ebsht\u00eb m\u00eb e komplikuar: n\u00eb linj\u00ebn e nevojshme t\u00eb fjal\u00ebs aplikohet tensioni i nevojsh\u00ebm p\u00ebr lexim, nd\u00ebrsa n\u00eb t\u00eb gjitha linjat e tjera t\u00eb fjal\u00ebs aplikohet nj\u00eb tension q\u00eb hap tranzistorin pavar\u00ebsisht nga niveli i ngarkes\u00ebs n\u00eb t\u00eb. Pasi t\u00eb gjith\u00eb tranzistor\u00ebt e tjer\u00eb jan\u00eb me siguri t\u00eb hapur, prania e tensionit n\u00eb linj\u00ebn e bitit varet vet\u00ebm nga nj\u00eb tranzistor, n\u00eb t\u00eb cilin aplikohet tensioni i leximit.<\/p>\n<p>Shpikja e memories Flash t\u00eb tipit NAND lejon t\u00eb kompaktohet ndjesh\u00ebm skema, duke vendosur nj\u00eb volum m\u00eb t\u00eb madh t\u00eb memories n\u00eb p\u00ebrmasa t\u00eb nj\u00ebjta. Deri n\u00eb vitin 2007, volumi i memories ishte rritur duke reduktuar procesin e prodhimit t\u00eb \u00e7ipit.<\/p>\n<p>N\u00eb vitin 2007, kompania Toshiba prezantoi nj\u00eb version t\u00eb ri t\u00eb memories NAND: <b>Vertical NAND (V-NAND)<\/b>, e njohur gjithashtu si <b>3D NAND<\/b>. N\u00eb k\u00ebt\u00eb teknologji theksohet vendosja e tranzistor\u00ebve n\u00eb disa shtresa, e cila p\u00ebrs\u00ebri lejon komaktimin e skem\u00ebs dhe rritjen e volumit t\u00eb memories. Megjithat\u00eb, komaktimi i skem\u00ebs nuk mund t\u00eb p\u00ebrs\u00ebritet pafund\u00ebsisht, prandaj u eksploruan metoda t\u00eb tjera p\u00ebr rritjen e volumit t\u00eb ruajtur t\u00eb memories.<\/p>\n<p><img decoding=\"async\" alt=\"Hyrje n\u00eb SSD. Pjesa 4. Fizike\" src=\"\/wp-content\/uploads\/2020\/03\/11bbf1b13a91ae464c305fac941218ec.png\" style=\"display:block;margin: 0 auto;\" \/><br \/>\nFillimisht, \u00e7do tranzistor ruante dy nivele ngarkese: zero logjike dhe nj\u00ebsi logjike. Ky qasje quhet <b>Single-Level Cell (SLC)<\/b>. Disqet me k\u00ebt\u00eb teknologji dallohen p\u00ebr besueshm\u00ebrin\u00eb e lart\u00eb dhe numrin maksimal t\u00eb cikleve t\u00eb ri-shkrimit.<\/p>\n<p>Me kalimin e koh\u00ebs u mor nj\u00eb vendim p\u00ebr t\u00eb rritur kapacitetin e disqeve me \u00e7mimin e q\u00ebndrushm\u00ebris\u00eb. Pra, numri i niveleve t\u00eb ngarkes\u00ebs n\u00eb qeli arriti deri n\u00eb kat\u00ebr, dhe teknologjia u quajt <b>Multi-Level Cell (MLC)<\/b>. M\u00eb pas u shfaq\u00ebn <b>Triple-Level Cell (TLC)<\/b> dhe <b>Quad-Level Cell (QLC)<\/b>. N\u00eb t\u00eb ardhmen do t\u00eb shfaqet nj\u00eb nivel i ri \u2014 <b>Penta-Level Cell (PLC)<\/b> me pes\u00eb biti n\u00eb nj\u00eb qel\u00ec. Sa m\u00eb shum\u00eb biti t\u00eb vendoset n\u00eb nj\u00eb qel\u00ed, aq m\u00eb i madh \u00ebsht\u00eb volumi i disqes me t\u00eb nj\u00ebjtin \u00e7mim, por m\u00eb pak q\u00ebndrushm\u00ebri.<\/p>\n<p>Kompaktimi i skem\u00ebs n\u00ebp\u00ebrmjet reduktimit t\u00eb procesit dhe rritjes s\u00eb numrit t\u00eb bit\u00ebve n\u00eb nj\u00eb tranzistor ndikojn\u00eb negativisht n\u00eb t\u00eb dh\u00ebnat e ruajtura. Megjith\u00ebse n\u00eb EPROM dhe EEPROM p\u00ebrdoren t\u00eb nj\u00ebjt\u00ebt tranzistor\u00eb, EPROM dhe EEPROM jan\u00eb n\u00eb gjendje t\u00eb ruajn\u00eb t\u00eb dh\u00ebna pa energji p\u00ebr dhjet\u00eb vjet, nd\u00ebrsa memoria moderne Flash mund t\u00eb 'harroj\u00eb' gjith\u00e7ka q\u00eb pas nj\u00eb viti.<\/p>\n<blockquote><p>P\u00ebrdorimi i memories Flash n\u00eb industrin\u00eb hap\u00ebsinore \u00ebsht\u00eb i v\u00ebshtir\u00eb, pasi radiacioni ndikon negativisht n\u00eb elektronet n\u00eb kapak\u00ebt fluturuese.<\/p><\/blockquote>\n<p>Problemet e p\u00ebrmendura e pengojn\u00eb Flash-in q\u00eb t\u00eb b\u00ebhet lideri i pap\u00ebrg\u00ebnjeshtruar n\u00eb fush\u00ebn e ruajtjes s\u00eb informacionit. Edhe pse kujtesa nga baza Flash \u00ebsht\u00eb shum\u00eb e p\u00ebrhapur, po b\u00ebhen k\u00ebrkime p\u00ebr lloje t\u00eb tjera kujtese q\u00eb nuk kan\u00eb k\u00ebto mang\u00ebsi, mes t\u00eb cilave ruajtja e informacionit n\u00eb momentet magnetike dhe gjendjet fazore.<\/p>\n<h2>Kujtesa magnetorrezistive<\/h2>\n<p>\n<noindex><a rel=\"nofollow\" href=\"https:\/\/www.youtube.com\/watch?v=lne8r2mIwuA\"><img decoding=\"async\" alt=\"Hyrje n\u00eb SSD. Pjesa 4. Fizike\" src=\"\/wp-content\/uploads\/2020\/03\/12ad7d4ed598506d78199c56e91a3831.png\" style=\"display:block;margin: 0 auto;\" \/><\/a><\/noindex><br \/>\nKodimi i informacionit me momentet magnetike u shfaq n\u00eb vitin 1955 si kujtes\u00eb n\u00eb b\u00ebrthama magnetike. Deri n\u00eb mes t\u00eb viteve 1970, kujtesa e feritit ishte lloji kryesor i kujtes\u00ebs. Leximi i nj\u00eb bitti nga ky lloj kujtese shkaktonte demagnetizimin e unaz\u00ebs dhe humbjen e informacionit. Si pasoj\u00eb, pas leximit t\u00eb nj\u00eb bitti, duhej ta regjistronim p\u00ebrs\u00ebri.<\/p>\n<p>N\u00eb zhvillimet bashk\u00ebkohore t\u00eb kujtes\u00ebs magnetorrezistive, n\u00eb vend t\u00eb unazave p\u00ebrdoren dy shtresa ferromagnetike, t\u00eb ndara nga nj\u00eb dielektrik. Nj\u00eb shtres\u00eb \u00ebsht\u00eb nj\u00eb magnet permanent, nd\u00ebrsa tjetra ndryshon drejtimin e magnetizimit. Leximi i nj\u00eb bitti nga nj\u00eb cel dhe i till\u00eb reduktohet n\u00eb matjen e rezistenc\u00ebs gjat\u00eb kalimit t\u00eb rrym\u00ebs: n\u00ebse shtresat jan\u00eb magnetizuar n\u00eb drejtime t\u00eb kund\u00ebrta, at\u00ebher\u00eb rezistenca \u00ebsht\u00eb m\u00eb e lart\u00eb dhe kjo ekvivalent me vler\u00ebn \"1\".<\/p>\n<p>Kujtesa e feritit nuk k\u00ebrkon nj\u00eb burim t\u00eb vazhduesh\u00ebm energjie p\u00ebr t\u00eb mbajtur informacionin e regjistruar, megjithat\u00eb fusha magnetike e cel\u00ebs mund t\u00eb ndikoj\u00eb n\u00eb \"fqinj\u00ebn\", q\u00eb vendos kufizime n\u00eb dend\u00ebsin\u00eb e sistemit.<\/p>\n<blockquote><p>Sipas <noindex><a rel=\"nofollow\" href=\"https:\/\/www.jedec.org\/sites\/default\/files\/Alvin_Cox%20%5BCompatibility%20Mode%5D_0.pdf\">JEDEC<\/a><\/noindex> Disqet SSD nga baza Flash pa energji duhet t\u00eb mbajn\u00eb informacionin p\u00ebr t\u00eb pakt\u00ebn tre muaj n\u00eb temperatur\u00ebn ambientale 40\u00b0 C. Chipi i zhvilluar nga Intel <noindex><a rel=\"nofollow\" href=\"https:\/\/3dnews.ru\/983125\">nga kujtesa magnetorrezistive<\/a><\/noindex> premton t\u00eb ruaj\u00eb t\u00eb dh\u00ebnat p\u00ebr dhjet\u00eb vjet n\u00eb temperatur\u00ebn 200\u00b0 C.<\/p><\/blockquote>\n<p>Pavar\u00ebsisht nga kompleksiteti i zhvillimit, kujtesa magnetorrezistive nuk degradohet gjat\u00eb p\u00ebrdorimit dhe ka performanc\u00ebn m\u00eb t\u00eb mir\u00eb krahasuar me llojet e tjera t\u00eb kujtes\u00ebs, q\u00eb e b\u00ebn at\u00eb t\u00eb r\u00ebnd\u00ebsishme p\u00ebr t'u marr\u00eb n\u00eb konsiderat\u00eb.<\/p>\n<h2>Kujtesa me ndryshim fazor<\/h2>\n<p>\nLloji i tret\u00eb i perspektiv\u00ebs \u00ebsht\u00eb kujtesa e bazuar n\u00eb kalimin e faz\u00ebs. Ky lloj kujtes\u00ebs p\u00ebrdor pronat e halogjenideve p\u00ebr t\u00eb kaluar midis gjendjes kristaline dhe amfishtike gjat\u00eb ngrohjes.<\/p>\n<blockquote><p><b>Halogjenidet<\/b> \u2014 lidhje binjake t\u00eb metaleve me grupin e 16-t\u00eb (grupi i 6-t\u00eb i n\u00ebngrupit kryesor) t\u00eb tabel\u00ebs periodike t\u00eb Mendeleev-it. P\u00ebr shembull, n\u00eb CD-RW, DVD-RW, DVD-RAM dhe disqet Blu-ray p\u00ebrdoren telluridi i germaniumit (GeTe) dhe telluridi i antimones (III) (Sb2Te3).<\/p><\/blockquote>\n<p>Studimet mbi aplikimin e kalimit fazor p\u00ebr ruajtjen e informacionit u zhvilluan n\u00eb <b>vitet 1960<\/b> nga Stanford Ovshinski, por at\u00ebher\u00eb nuk u arrit n\u00eb implementimin komercial. N\u00eb vitet 2000, interesi p\u00ebr teknologjin\u00eb u rishfaq, Samsung regjistroi nj\u00eb patent\u00eb q\u00eb lejon kalimin e bitit brenda 5 ns, nd\u00ebrsa Intel dhe STMicroelectronics rrit\u00ebn numrin e gjendjeve n\u00eb kat\u00ebr, duke i dyfishuar k\u00ebshtu kapacitetet e mundshme.<\/p>\n<p>Me ngrohjen mbi pik\u00ebn e shkrirjes, chalkogenidi humb struktur\u00ebn kristaline, dhe duke u ftohur shnd\u00ebrrohet n\u00eb nj\u00eb form\u00eb amorfe, e cila karakterizohet nga nj\u00eb rezistenc\u00eb e lart\u00eb elektrike. Nga ana tjet\u00ebr, kur ngrohet deri n\u00eb nj\u00eb temperatur\u00eb mbi pik\u00ebn e kristalizimit, por m\u00eb posht\u00eb pik\u00ebs s\u00eb shkrirjes, chalkogenidi rikthehet n\u00eb nj\u00eb gjendje kristaline me nj\u00eb nivel t\u00eb ul\u00ebt rezistence.<\/p>\n<p>Memoria me kalimin fazor nuk k\u00ebrkon \"rimbushje\" me kalimin e koh\u00ebs, dhe gjithashtu nuk \u00ebsht\u00eb e ndjeshme ndaj rrezatimit, n\u00eb ndryshim nga memoria q\u00eb bazohet n\u00eb ngarkesa elektrike. Ky tip memorjeje mund t\u00eb ruaj\u00eb informacionin p\u00ebr 300 vjet n\u00eb temperatur\u00ebn 85\u00b0\u0421.<\/p>\n<p>Mendohet se zhvillimi i Intel, teknologjia <b>3D Crosspoint (3D XPoint)<\/b> p\u00ebrdor pik\u00ebrisht kalimet fazore p\u00ebr ruajtjen e informacionit. 3D XPoint p\u00ebrdoret n\u00eb memorjet Intel\u00ae Optane\u2122 Memory, p\u00ebr t\u00eb cilat \u00ebsht\u00eb shpallur nj\u00eb q\u00ebndrueshm\u00ebri e madhe.<\/p>\n<h2>P\u00ebrfundim<\/h2>\n<p>\nDisajni fizik i memorjeve SSD ka p\u00ebrjetuar shum\u00eb ndryshime gjat\u00eb m\u00eb shum\u00eb se gjysm\u00eb burri historik, megjithat\u00eb, \u00e7do zgjidhje ka disavantazhet e saj. Pavar\u00ebsisht nga popullariteti i padiskutuesh\u00ebm t\u00eb memorieve Flash, disa kompani, p\u00ebrfshir\u00eb Samsung dhe Intel, po punojn\u00eb p\u00ebr mund\u00ebsin\u00eb e krijimit t\u00eb memorjeve me momente magnetike.<\/p>\n<p>Reduktimi i konsumit t\u00eb qelizave, densifikimi i tyre dhe rritja e kapacitetit t\u00eb p\u00ebrgjithsh\u00ebm t\u00eb memorjeve jan\u00eb drejtimet q\u00eb aktualisht jan\u00eb t\u00eb perspektivshme p\u00ebr zhvillimin e m\u00ebtejsh\u00ebm t\u00eb memorjeve SSD.<\/p>\n<blockquote><p>Mund t\u00eb testoni memorjet m\u00eb t\u00eb avancuara NAND dhe 3D XPoint tani n\u00eb <noindex><a rel=\"nofollow\" href=\"http:\/\/slc.tl\/S-MoX\">Selectel LAB<\/a><\/noindex>.<\/p><\/blockquote>\n<p>A mendoni, do t\u00eb z\u00ebvend\u00ebsohen teknologjit\u00eb e ruajtjes s\u00eb informacionit n\u00eb ngarkesa elektrike nga t\u00eb tjera, si\u00e7 jan\u00eb disqet kvarci ose memorja optike n\u00eb nanokristalet e krip\u00ebs?<br \/>\n<br \/>Burimi: <a content=\"nofollow\" rel=\"nofollow\" href=\"https:\/\/habr.com\/ru\/company\/selectel\/blog\/491264\/\">habr.com<\/a> <\/p>","protected":false,"gt_translate_keys":[{"key":"rendered","format":"html"}]},"excerpt":{"rendered":"<p>\u041f\u0440\u043e\u0448\u043b\u044b\u0435 \u0447\u0430\u0441\u0442\u0438 \u0446\u0438\u043a\u043b\u0430 \u00ab\u0412\u0432\u0435\u0434\u0435\u043d\u0438\u0435 \u0432 SSD\u00bb \u043f\u043e\u0432\u0435\u0434\u0430\u043b\u0438 \u0447\u0438\u0442\u0430\u0442\u0435\u043b\u044e \u043f\u0440\u043e \u0438\u0441\u0442\u043e\u0440\u0438\u044e \u043f\u043e\u044f\u0432\u043b\u0435\u043d\u0438\u044f SSD-\u043d\u0430\u043a\u043e\u043f\u0438\u0442\u0435\u043b\u0435\u0439, \u0438\u043d\u0442\u0435\u0440\u0444\u0435\u0439\u0441\u044b \u0432\u0437\u0430\u0438\u043c\u043e\u0434\u0435\u0439\u0441\u0442\u0432\u0438\u044f \u0441 \u043d\u0438\u043c\u0438 \u0438 \u043f\u043e\u043f\u0443\u043b\u044f\u0440\u043d\u044b\u0435 \u0444\u043e\u0440\u043c-\u0444\u0430\u043a\u0442\u043e\u0440\u044b. \u0427\u0435\u0442\u0432\u0451\u0440\u0442\u0430\u044f \u0447\u0430\u0441\u0442\u044c \u0440\u0430\u0441\u0441\u043a\u0430\u0436\u0435\u0442 \u043e \u0445\u0440\u0430\u043d\u0435\u043d\u0438\u0438 \u0434\u0430\u043d\u043d\u044b\u0445 \u0432\u043d\u0443\u0442\u0440\u0438 \u043d\u0430\u043a\u043e\u043f\u0438\u0442\u0435\u043b\u0435\u0439. \u0412 \u043f\u0440\u0435\u0434\u044b\u0434\u0443\u0449\u0438\u0445 \u0441\u0442\u0430\u0442\u044c\u044f\u0445 \u0446\u0438\u043a\u043b\u0430: \u0418\u0441\u0442\u043e\u0440\u0438\u044f \u0441\u043e\u0437\u0434\u0430\u043d\u0438\u044f HDD \u0438 SSD \u0412\u043e\u0437\u043d\u0438\u043a\u043d\u043e\u0432\u0435\u043d\u0438\u0435 \u0438\u043d\u0442\u0435\u0440\u0444\u0435\u0439\u0441\u043e\u0432 \u043d\u0430\u043a\u043e\u043f\u0438\u0442\u0435\u043b\u0435\u0439 \u041e\u0441\u043e\u0431\u0435\u043d\u043d\u043e\u0441\u0442\u0438 \u0444\u043e\u0440\u043c-\u0444\u0430\u043a\u0442\u043e\u0440\u043e\u0432 \u0425\u0440\u0430\u043d\u0435\u043d\u0438\u0435 \u0434\u0430\u043d\u043d\u044b\u0445 \u0432 \u0442\u0432\u0435\u0440\u0434\u043e\u0442\u0435\u043b\u044c\u043d\u044b\u0445 \u043d\u0430\u043a\u043e\u043f\u0438\u0442\u0435\u043b\u044f\u0445 \u043c\u043e\u0436\u043d\u043e \u0440\u0430\u0437\u0434\u0435\u043b\u0438\u0442\u044c \u043d\u0430 \u0434\u0432\u0435 \u043b\u043e\u0433\u0438\u0447\u0435\u0441\u043a\u0438\u0435 \u0447\u0430\u0441\u0442\u0438: \u0445\u0440\u0430\u043d\u0435\u043d\u0438\u0435 \u0438\u043d\u0444\u043e\u0440\u043c\u0430\u0446\u0438\u0438 \u0432 [&hellip;]<\/p>\n","protected":false,"gt_translate_keys":[{"key":"rendered","format":"html"}]},"author":1,"featured_media":73398,"comment_status":"open","ping_status":"open","sticky":false,"template":"","format":"standard","meta":{"footnotes":""},"categories":[688],"tags":[],"class_list":["post-73397","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-administrirovanie"],"aioseo_notices":[],"aioseo_head":"\n\t\t<!-- All in One SEO 5.0.2 - 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