Umphuhlisi wehlabathi kuphela we-discrete magnetoresistive MRAM memory chips, i-Everspin Technologies, iyaqhubeka nokuphucula iteknoloji yemveliso. Namhlanje i-Everspin kunye ne-GlobalFoundries kunye ukuphuhlisa iteknoloji yokuvelisa i-STT-MRAM microcircuits ezinemigangatho ye-12 nm kunye ne-FinFET transistors.
I-Everspin inamalungelo omenzi angaphezulu kwama-650 kunye nezicelo ezinxulumene nenkumbulo ye-MRAM. Le yinkumbulo, ukubhala kwiseli efana nokubhala ulwazi kwipleyiti yemagnethi yehard disk. Kuphela kwimeko ye-microcircuits, iseli nganye inentloko yayo (ngokwemiqathango) yemagnethi. Imemori ye-STT-MRAM ethathe indawo yayo, ngokusekwe kwisiphumo sokudluliselwa kwesantya se-electron spin, isebenza kunye neendleko zamandla eziphantsi, kuba isebenzisa imisinga ephantsi kwiindlela zokubhala nokufunda.
Ekuqaleni, imemori ye-MRAM eyalelwe yi-Everspin yaveliswa yi-NXP kwisityalo sayo e-USA. Kwi-2014, u-Everspin wangena kwisivumelwano somsebenzi odibeneyo kunye ne-GlobalFoundries. Ngokudibeneyo, baqala ukuphuhlisa iinkqubo zokuvelisa ze-MRAM (STT-MRAM) ezidityanisiweyo kunye nezizinzisiweyo besebenzisa iinkqubo zokuvelisa eziphucukileyo.
Ngokuhamba kwexesha, izibonelelo ze-GlobalFoundries ziqalise ukuveliswa kwe-40-nm kunye ne-28-nm STT-MRAM chips (ephela ngemveliso entsha - i-chip ye-1-Gbit discrete STT-MRAM), kwaye ilungiselele iteknoloji yenkqubo ye-22FDX yokudibanisa i-STT- Uluhlu lwe-MRAM lube ngabalawuli abasebenzisa i-22-nm yeteknoloji yenkqubo ye-nm kwii-wafers ze-FD-SOI. Isivumelwano esitsha phakathi kwe-Everspin kunye ne-GlobalFoundries siya kukhokelela ekudluliseleni ukuveliswa kwee-chips ze-STT-MRAM kwi-teknoloji yenkqubo ye-12-nm.
Imemori ye-MRAM isondela ekusebenzeni kwememori ye-SRAM kwaye inokuthi ithathe indawo yayo kubalawuli be-Intanethi yeZinto. Kwangaxeshanye, ayiguquguquki kwaye ixhathisa kakhulu ukunxiba kunememori ye-NAND eqhelekileyo. Ukutshintshela kwimigangatho ye-nm ye-12 kuya kwandisa ubuninzi bokurekhoda kwe-MRAM, kwaye le yintsilelo yayo ephambili.
umthombo: 3dnews.ru