Amacandelo angaphambili "Intshayelelo kwi-SSD" uchungechunge luxelele umfundi malunga nembali yokuvela kwe-SSD drives, ujongano lokusebenzisana nabo, kunye neefom ezidumileyo. Inxalenye yesine iya kuthetha malunga nokugcina idatha ngaphakathi kwi-drives.
Kumanqaku angaphambili kuthotho:
Ukugcinwa kwedatha kwi-solid-state drives inokwahlulwa ibe ngamacandelo amabini anengqiqo: ukugcina ulwazi kwiseli enye kunye nokulungelelanisa ukugcinwa kweeseli.
Iseli nganye yeevenkile zombuso oqinileyo intwana enye okanye ngaphezulu yolwazi. Iindidi ezahlukeneyo zolwazi zisetyenziselwa ukugcina ulwazi. iinkqubo zomzimba. Xa kusenziwa i-slid-state drives, le mithamo ilandelayo ithathelwe ingqalelo kulwazi lwekhowudi:
- iindleko zombane (kubandakanywa imemori ekhanyayo);
- amaxesha magnetic (inkumbulo yemagnetoresistive);
- ithi isigaba (inkumbulo enotshintsho kwimo yesigaba).
Imemori esekelwe kwiintlawulo zombane
Ukufakwa kweekhowudi kwingcaciso usebenzisa intlawulo embi kuphantsi kwezisombululo ezininzi:
- I-ultraviolet erasable ROM (EPROM);
- iROM ecinywayo ngombane (EEPROM);
- Inkumbulo edanyazayo.
Iseli nganye yenkumbulo i isango elidadayo MOSFET, egcina intlawulo embi. Umahluko wayo kwi-transistor ye-MOS eqhelekileyo kubukho besango elidadayo - umqhubi kwi-dielectric layer.
Xa umahluko onokuthi udalwe phakathi komsele kunye nomthombo kwaye kukho isakhono esilungileyo kwisango, umsinga uya kumpompoza ukusuka kumthombo ukuya kumanzi. Nangona kunjalo, ukuba kukho umahluko omkhulu ngokwaneleyo, ezinye ii-electron "ziqhekeza" umaleko we-dielectric kwaye ziphelele kwisango elidadayo. Lo mcimbi ubizwa ngokuba .
Isango elidadayo elihlawuliswa kakubi lenza indawo yombane ethintela umsinga ukuba ungampompozi ukusuka kumthombo ukuya kumanzi. Ngaphezu koko, ubukho bee-electron kwisango elidadayo kwandisa amandla ombane apho i-transistor ijika. Ngamnye "ubhala" kwisango elidadayo le-transistor, i-dielectric layer yonakaliswa kancinci, ebeka umda kwinani lemijikelo yokubhala kwakhona kwiseli nganye.
Ii-MOSFETs zesango elidadayo zaphuhliswa nguDawon Kahng noSimon Min Sze eBell Labs ngo-1967. Kamva, xa ufunda iziphene kwiisekethe ezidibeneyo, kwaphawulwa ukuba ngenxa yentlawulo kwisango elidadayo, i-voltage evula i-transistor yatshintsha. Oku kufunyanisiweyo kubangele uDov Frohman ukuba aqalise ukusebenza kwimemori esekwe kulo mcimbi.
Ukutshintsha i-voltage ye-threshold kukuvumela ukuba "uprogram" i-transistors. Ii-transistors zesango elidadayo aziyi kuvulwa xa amandla ombane esango mkhulu kunombane we-threshold we-transistor ngaphandle kwee-electron, kodwa ngaphantsi kwe-voltage ye-threshold ye-transistor ene-electrons. Masiyibize le xabiso umbane wokufunda.
Inkumbulo efundekayo efundekayo kuphela
Ngo-1971, umqeshwa we-Intel uDov Frohman wenza inkumbulo ebhalwe ngokutsha esekwe kwi-transistor ebizwa ngokuba IMemori Ecimayo Efundeka Kuphela (EPROM). Ukurekhoda kwimemori kwenziwa ngokusebenzisa isixhobo esikhethekileyo - umdwelisi. Umdwebi wenkqubo usebenzisa amandla ombane aphezulu kwitshiphu kunokuba asetyenziswe kwiisekethe zedijithali, ngaloo ndlela "ubhala" ii-electron kumasango adadayo e-transistors apho kuyimfuneko.
Imemori ye-EPROM yayingenzelwanga ukucoca amasango adadayo e-transistors ngombane. Endaweni yoko, kwacetywa ukuba kuvezwe ii-transistors ekukhanyeni okunamandla kwe-ultraviolet, iifotoni zazo ezaziza kunika ii-electron amandla afunekayo ukubaleka isango elidadayo. Ukuvumela ukukhanya kwe-ultraviolet ukuba kungene nzulu kwi-chip, iglasi ye-quartz yongezwa kwindlu.
U-Fromean waqala wabonisa iprototype yakhe ye-EPROM ngoFebruwari 1971 kwinkomfa ye-IC eqinile e-Philadelphia. UGordon Moore ukhumbule lo mboniso: “UDov ubonise ipateni encinci kwiiseli zememori ze-EPROM. Xa iiseli zavezwa kukukhanya kwe-ultraviolet, iibhithi zanyamalala nganye nganye de ilogo ye-Intel engaziwa yacinywa ngokupheleleyo. … Izingqi zanyamalala, kwaye xa esokugqibela sathi shwaka, bonke abaphulaphuli baqhwaba izandla. Inqaku likaDov laqatshelwa njengelona libalaseleyo kwinkomfa. " — Ukuguqulelwa kwenqaku
Imemori ye-EPROM ibiza kakhulu kunezixhobo ezazisetyenziswa ngaphambili "ezilahlwayo" zememori yokufunda kuphela (i-ROM), kodwa ukukwazi ukuphinda kulungiselelwe kukuvumela ukuba ulungise iisekethe ngokukhawuleza kwaye unciphise ixesha elithathayo ukuphuhlisa i-hardware entsha.
Ukucwangcisa kwakhona iiROM ngokukhanya kwe-ultraviolet yayiyimpumelelo enkulu, nangona kunjalo, umbono wokubhala kwakhona umbane wawusele usemoyeni.
NgoMbane iMemory Programmable Read-Only Eciable
Ngo-1972, abathathu baseJapan: uYasuo Tarui, uYutaka Hayashi kunye noKiyoko Nagai bazisa inkumbulo yokuqala efundeka ngombane efundeka kuphela (EEPROM okanye E2PROM). Kamva, uphando lwabo lwezenzululwazi luya kuba yinxalenye yamalungelo awodwa omenzi wechiza ekuphunyezweni korhwebo lwenkumbulo ye-EEPROM.
Iseli nganye yememori ye-EEPROM inee-transistors ezininzi:
- isango elidadayo i-transistor yokugcina isuntswana;
- i-transistor yokulawula indlela yokufunda-bhala.
Olu yilo lunzima kakhulu i-wiring yesekethe yombane, ngoko imemori ye-EEPROM isetyenziswe kwiimeko apho imemori encinci yayingabalulekanga. I-EPROM yayisasetyenziselwa ukugcina isixa esikhulu sedatha.
Inkumbulo edanyazayo
Inkumbulo ekhanyayo, edibanisa ezona mpawu zibalaseleyo ze-EPROM kunye ne-EEPROM, yaphuhliswa ngunjingalwazi waseJapan uFujio Masuoka, injineli yaseToshiba, ngowe-1980. Uphuhliso lokuqala lwabizwa ngokuba yi-NOR Flash memory kwaye, njengabanduleli bayo, lusekwe kwii-MOSFETs zesango elidadayo.
OKANYE inkumbulo edanyazayo luluhlu olunamacala amabini eetransistors. Amasango e-transistors axhunyiwe kumgca wegama, kwaye i-drain ixhunyiwe kumgca we-bit. Xa i-voltage isetyenziswe kumgca wegama, i-transistors equkethe i-electrons, oko kukuthi, ukugcina "enye," ayiyi kuvula kwaye ikhoyo ayiyi kuhamba. Ngokusekelwe kubukho okanye ukungabikho yangoku kumgca kancinane, isiphelo sithathwa malunga nexabiso lebit.
Kwiminyaka esixhenxe kamva, uFujio Masuoka wavelisa inkumbulo yeNAND Flash. Olu hlobo lwememori luyohluka kwinani le-transistors kumgca omncinci. Kwimemori ye-NOR, i-transistor nganye ixhunywe ngokuthe ngqo kumgca omncinci, ngelixa kwimemori ye-NAND, i-transistors ixhunyiwe kwi-series.
Ukufunda kwimemori yolu lungelelwaniso kunzima ngakumbi: i-voltage efunekayo yokufunda isetyenziswe kumgca ofunekayo wegama, kwaye i-voltage isetyenziswe kuyo yonke imigca yegama, evula i-transistor kungakhathaliseki ukuba yinqanaba lentlawulo kuyo. Ekubeni zonke ezinye ii-transistors ziqinisekisiwe ukuba zivulekile, ubukho be-voltage kumgca we-bit buxhomekeke kuphela kwi-transistor enye, apho i-voltage efundwayo isetyenziswe khona.
Ukuveliswa kwememori ye-NAND Flash kwenza ukuba kube lula ukucinezela isekethe, ukubeka imemori engaphezulu kwisayizi efanayo. Kuze kube yi-2007, amandla ememori anyuswe ngokunciphisa inkqubo yokuvelisa i-chip.
Ngo-2007, uToshiba wazisa inguqulelo entsha yememori ye-NAND: NAND ethe nkqo (V-NAND), kwaziwa njenge 3D NAND. Le teknoloji ibeka ugxininiso ekubekeni i-transistors kwimigangatho emininzi, ephinda ivumele ukujikeleza kwe-denser kunye nokwandisa umthamo wememori. Nangona kunjalo, ukunyanzeliswa kwesiphaluka akukwazi ukuphinda kuphindwe ngokungapheliyo, ngoko ke ezinye iindlela ziye zahlolwa ukuze kwandiswe amandla okugcina.
Ekuqaleni, i-transistor nganye yayigcina amanqanaba amabini entlawulo: i-zero enengqiqo kunye nengqiqo enye. Le ndlela ibizwa ngokuba ISeli ekwinqanaba elinye (SLC). Iidrives ezinobu buchwepheshe zithembeke kakhulu kwaye zinenani eliphezulu lemijikelezo yokubhala kwakhona.
Ngokuhamba kwexesha, kwagqitywa ukuba kwandiswe umthamo wokugcina ngeendleko zokumelana nokunxiba. Ngoko inani lamanqanaba entlawulo kwiseli lifikelela kwisine, kwaye iteknoloji yabizwa ISeli enamanqanaba amaninzi (MLC). Kwalandela ISeli yeNqanaba-ntathu (TLC) и I-Quad-Level Cell (QLC). Kuya kubakho inqanaba elitsha kwixesha elizayo - Iseli yePenta-Level (PLC) ngamasuntswana amahlanu kwiseli nganye. Amasuntswana amaninzi angena kwiseli enye, ubukhulu bomthamo wokugcina ngexabiso elifanayo, kodwa ukuxhathisa okungaphantsi kokunxiba.
Ukuxinwa kwesiphaluka ngokunciphisa inkqubo yobugcisa kunye nokwandisa inani leebhithi kwi-transistor enye kuchaphazela kakubi idatha egciniweyo. Nangona i-EPROM kunye ne-EEPROM zisebenzisa i-transistors efanayo, i-EPROM kunye ne-EEPROM inokugcina idatha ngaphandle kwamandla iminyaka elishumi, ngelixa imemori ye-Flash yanamhlanje "ingayilibala" yonke into emva konyaka.
Ukusetyenziswa kwememori yeFlash kwishishini lendawo kunzima kuba ukusasazeka kwemitha kunefuthe elibi kwii-electron ezikumasango adadayo.
Ezi ngxaki zithintela imemori yeFlash ukuba ibe yinkokeli engenakuphikiswa kwindawo yokugcina ulwazi. Ngaphandle kwento yokuba iidrives ezisekwe kwimemori yeFlash zixhaphakile, uphando luyaqhubeka kwezinye iindidi zememori ezingenazo ezi zinto zingalunganga, kubandakanya nokugcina ulwazi kumzuzu wamagnetic kunye nenqanaba lesigaba.
Inkumbulo yemagnethi
Ulwazi lwe-encoding kunye namaxesha amagnetic avela kwi-1955 ngendlela yememori kwi-magnetic cores. Kude kube phakathi kwiminyaka yoo-1970, inkumbulo ye-ferrite yayiyeyona nto iphambili yenkumbulo. Ukufunda kancinane kolu hlobo lwenkumbulo kukhokelele ekupheliseni kazibuthe kwiringi kunye nokulahleka kolwazi. Ngaloo ndlela, emva kokufunda kancinane, kwafuneka ibhalwe kwakhona.
Kuphuhliso lwangoku lwenkumbulo ye-magnetoresistive, endaweni yamakhonkco, kusetyenziswa iileya ezimbini ze-ferromagnet, ezahlulwe yi-dielectric. Omnye umaleko ngumazibuthe osisigxina, kwaye owesibini utshintsha ulwalathiso lwemagneti. Ukufunda kancinci kwiseli enjalo kwehla ukulinganisa ukuchasana xa udlula ngoku: ukuba iileyile zifakwe zimagneti kwicala elichaseneyo, ke ukuchasana kukhulu kwaye oku kufana nexabiso "1".
Inkumbulo ye-Ferrite ayifuni umthombo wamandla oqhubekayo ukugcina ulwazi olurekhodiweyo, nangona kunjalo, intsimi yamagnetic yeseli inokuchaphazela "ummelwane", obeka umda kwi-compact compaction.
Ngokutsho Iidrive ze-SSD ezisekwe kwimemori yeFlash ngaphandle kwamandla kufuneka zigcine ulwazi kangangeenyanga ezintathu ubuncinci kumaqondo obushushu angama-40°C. Iyilwe ngu-Intel uthembisa ukugcina idatha iminyaka elishumi kwi-200°C.
Ngaphandle kobunzima bophuhliso, imemori ye-magnetoresistive ayithobi ngexesha lokusetyenziswa kwaye inomsebenzi ongcono kakhulu phakathi kwezinye iindidi zememori, ezingavumeli ukuba olu hlobo lwememori lubhalwe.
Imemori yokutshintsha isigaba
Uhlobo lwesithathu oluthembisayo lwememori yinkumbulo esekelwe kwinguqu yesigaba. Olu hlobo lwememori lusebenzisa iipropati ze-chalcogenides ukutshintsha phakathi kwe-crystalline kunye ne-amorphous states xa ishushu.
IiChalcogenides - iikhompawundi zebinary zetsimbi kunye neqela le-16 (iqela le-6 leqela eliphambili) kwitheyibhile yeperiodic. Ngokomzekelo, i-CD-RW, i-DVD-RW, i-DVD-RAM kunye ne-Blu-ray discs isebenzisa i-germanium telluride (GeTe) kunye ne-antimony (III) telluride (Sb2Te3).
Uphando malunga nokusetyenziswa kwenguqu yesigaba sokugcina ulwazi lwenziwa kwi 1960s ngonyaka ngu Stanford Ovshinsky, kodwa ke ayizange ifike ukuphunyezwa yorhwebo. Kwiminyaka yoo-2000, kwabakho umdla ohlaziyiweyo kwitekhnoloji, itekhnoloji ye-Samsung enelungelo elilodwa lomenzi wechiza evumela ukutshintshwa kancinci kwi-5 ns, kunye ne-Intel kunye ne-STMicroelectronics yonyusa inani lamazwe ukuya kwezine, ngaloo ndlela iphinda kabini umthamo onokwenzeka.
Xa ishushu ngaphezu kwendawo yokunyibilika, i-chalcogenide ilahlekelwa isakhiwo sayo se-crystalline kwaye, xa ipholisa, ijika ibe yifom ye-amorphous ebonakaliswe ngokumelana nombane ophezulu. Ngaloo ndlela, xa ushushu kwiqondo lokushisa ngaphezu kwendawo ye-crystallization, kodwa ngaphantsi kwendawo yokuncibilika, i-chalcogenide ibuyela kwi-crystalline state enezinga eliphantsi lokumelana.
Imemori yotshintsho lwesigaba ayifuni "ukutshaja kwakhona" ekuhambeni kwexesha, kwaye ayichaphazeleki kwimitha, ngokungafaniyo nememori ehlawulweyo yombane. Olu hlobo lwenkumbulo lunokugcina ulwazi kangangeminyaka engama-300 kubushushu obungama-85°C.
Kukholelwa ukuba uphuhliso lweteknoloji ye-Intel I-3D Crosspoint (3D XPoint) Isebenzisa iinguqu zesigaba ukugcina ulwazi. I-3D XPoint isetyenziswa kwi-Intel® Optane™ Memory drives, ekuthiwa inonyamezelo olukhulu.
isiphelo
Uyilo lomzimba lwe-slid-state drives lufumene utshintsho oluninzi kwimbali engaphezulu kwesiqingatha senkulungwane, nangona kunjalo, isisombululo ngasinye sinemiqobo yaso. Ngaphandle kokuthandwa okungenakuphikiswa kwememori yeFlash, iinkampani ezininzi, kubandakanya i-Samsung kunye ne-Intel, zijonga ukuba nokwenzeka kokwenza imemori esekwe kumzuzu wamagnetic.
Ukunciphisa ukunxiba kweeseli, ukuzidibanisa, kunye nokwandisa umthamo opheleleyo we-drive ziindawo ezithembisayo ngoku kuphuhliso olongezelelweyo lwe-slid-state drives.
Unokuvavanya eyona nto ipholileyo namhlanje ye-NAND kunye ne-3D XPoint drives ngoku kweyethu .
Ngaba ucinga ukuba iteknoloji yokugcina ulwazi kwiintlawulo zombane ziya kutshintshwa ngabanye, umzekelo, iidiski ze-quartz okanye imemori ye-optical kwi-nanocrystals yetyuwa?
umthombo: www.habr.com