I-lasers yaseMelika iya kunceda izazinzulu zaseBelgium ngokuphumelela kwi-teknoloji yenkqubo ye-3-nm nangaphezulu

Ngokutsho kwewebhusayithi ye-IEEE Spectrum, ukususela ekupheleni kukaFebruwari ukuya ekuqaleni kukaMatshi, ilebhu yadalwa kwiziko laseBelgian Imec kunye nenkampani yaseMelika iKMLabs ukufundisisa iingxaki nge-semiconductor photolithography phantsi kwempembelelo ye-EUV radiation (kwi-ultra- uluhlu olunzima lwe-ultraviolet). Kubonakala ngathi, yintoni ekhoyo yokufunda apha? Hayi, kukho isifundo ekufuneka sifundwe, kodwa kutheni kusekwe ilabhoratri entsha koku? I-Samsung yaqala ukuvelisa iitshiphusi ze-7nm ngokusetyenziswa ngokuyinxenye kweeskena ze-EUV kwiinyanga ezintandathu ezidlulileyo. I-TSMC kungekudala iza kuyijoyina kulo mzamo. Ekupheleni konyaka, bobabini baya kuqala imveliso enobungozi kunye nemigangatho ye-5 nm njalo njalo. Kwaye kukho iingxaki, kwaye zinzulu ngokwaneleyo ukuba iimpendulo kwimibuzo kufuneka zifunwe kwiilabhoratri, kwaye kungekhona kwimveliso.

I-lasers yaseMelika iya kunceda izazinzulu zaseBelgium ngokuphumelela kwi-teknoloji yenkqubo ye-3-nm nangaphezulu

Eyona ngxaki iphambili kwi-EUV lithography namhlanje ihlala ingumgangatho wefotoresist. Umthombo wemitha ye-EUV yiplasma, hayi i-laser, njengoko kunjalo kwizikena ezindala ze-193 nm. Ilaser ikhupha ithontsi lelothe kwindawo enegesi kwaye oku kubangelwa yimitha yelanga ikhupha iiphoton, amandla awo aphindwe kali-14 ngaphezu kwamandla eefotoni ezikwiscanner ezinemitha yeultraviolet. Ngenxa yoko, i-photoresist ayitshabalaliswanga kuphela kwezo ndawo apho ibhobhoza khona ngeefotoni, kodwa kunye neempazamo ezizenzekelayo zenzeke, kubandakanywa ngenxa yento ebizwa ngokuba yi-fractional effect yengxolo. Amandla ephotons aphezulu kakhulu. Iimvavanyo ezineeskena ze-EUV zibonisa ukuba i-photoresists, esakwazi ukusebenza kunye nemigangatho ye-7 nm, kwimeko yokuvelisa iisekethe ezi-5 nm zibonisa inqanaba eliphezulu kakhulu leziphene. Ingxaki inzima kangangokuba iingcali ezininzi azikholelwa ekuqalisweni ngokukhawuleza kwe-teknoloji yenkqubo ye-5 nm, kungakhankanyi ukutshintshela kwi-3 nm nangaphantsi.

Ingxaki yokudala isizukulwana esitsha se-photoresist iya kuzama ukusonjululwa kwibhubhoratri edibeneyo ye-Imec kunye ne-KMLabs. Kwaye baya kuyicombulula ukusuka kwindawo yokujonga indlela yesayensi, kwaye kungekhona ngokukhetha ama-reagents, njengoko kuye kwenziwa kwiminyaka engamashumi amathathu edlulileyo. Ukwenza oku, amaqabane enzululwazi aya kudala isixhobo sokufunda ngokubanzi iinkqubo zomzimba kunye neekhemikhali kwi-photoresist. Ngokuqhelekileyo, ii-synchrotrons zisetyenziselwa ukufunda iinkqubo kwinqanaba le-molecular, kodwa i-Imec kunye ne-KMLabs ziceba ukwenza uqikelelo lwe-EUV kunye nezixhobo zokulinganisa ngokusekelwe kwiilaser ze-infrared. I-KMLabs yingcali kwiinkqubo ze-laser.

 

I-lasers yaseMelika iya kunceda izazinzulu zaseBelgium ngokuphumelela kwi-teknoloji yenkqubo ye-3-nm nangaphezulu

Ngokusekwe kufakelo lwe-laser ye-KMLabs, iqonga lokuvelisa i-harmonics yomyalelo ophezulu liya kwenziwa. Ngokuqhelekileyo, ngenxa yale njongo, i-high-intensity laser pulse iqondiswe kwi-gaseous medium apho i-harmonics ephezulu kakhulu yomsindo we-pulse echanekileyo ivela. Ngoguquko olunjalo, ilahleko enkulu yamandla iyenzeka, ngoko ke umgaqo ofanayo wokuvelisa imitha ye-EUV ayinakusetyenziswa ngokuthe ngqo kwi-semiconductor lithography. Kodwa oku kwanele kwimifuniselo. Okona kubaluleke kakhulu, i-radiation ebangelwayo inokulawulwa kokubini ngobude be-pulse ukusuka kwi-picoseconds (10-12) ukuya kwi-attoseconds (10-18), kunye nobude be-wavelength ukusuka kwi-6,5 nm ukuya kwi-47 nm. Ezi ziimpawu ezixabisekileyo kwisixhobo sokulinganisa. Baya kunceda ukufunda iinkqubo ze-ultra-fast-fast molecular change in photoresist, iinkqubo ze-ionization kunye nokuvezwa kweefotoni zamandla aphezulu. Ngaphandle koku, i-industrial photolithography enemigangatho engaphantsi kwe-3 kunye ne-5 nm ihlala ibuzwa.

umthombo: 3dnews.ru

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