Ixesha elide , ukuba ukusuka kwitekhnoloji yenkqubo ye-3nm, ii-transistors ziya kuhamba ukusuka kwi-"fin" yamajelo e-FinFET ethe nkqo ukuya kumajelo anqamlezileyo e-nanopage ajikelezwe ngokupheleleyo ngamasango okanye i-GAA (isango-macala onke). Namhlanje, iziko laseFransi iCEA-Leti libonise ukuba iinkqubo zokwenziwa kwe-FinFET transistor zingasetyenziswa njani ukuvelisa iitransistor ze-GAA zamanqanaba amaninzi. Kwaye ukugcina ukuqhubeka kweenkqubo zobugcisa kusisiseko esithembekileyo sokuguqulwa ngokukhawuleza.
Iingcali ze-CEA-Leti ze-VLSI Technology & Circuits symposium 2020 malunga nokuveliswa kwe-transistor ye-GAA enemigangatho esixhenxe (enkosi ngokukhethekileyo kwindyikityha ye-coronavirus, enkosi apho amaxwebhu eenkcazo-ntetho aqala ukuvela ngokukhawuleza, kwaye kungekhona kwiinyanga emva kweenkomfa). Abaphandi baseFransi baye bafakazela ukuba banokuvelisa i-GAA transistors kunye namajelo ngendlela yonke "i-stack" ye-nanopages usebenzisa iteknoloji esetyenziswa ngokubanzi ebizwa ngokuba yinkqubo ye-RMG (isango lentsimbi elitshintshayo okanye, ngesiRashiya, isinyithi esitshintshiweyo (yethutyana) Isango). Ngesinye isikhathi, inkqubo yezobuchwepheshe ye-RMG yalungiselelwa ukuveliswa kwee-transistors ze-FinFET kwaye, njengoko sibona, inokwandiswa ekuveliseni i-GAA transistors kunye nolungiselelo lwamanqanaba amaninzi eziteshi ze-nanopage.
I-Samsung, njengoko sisazi, ngokuqala kokuveliswa kwee-chips ze-3-nm, iceba ukuvelisa i-GAA ye-transistors yamanqanaba amabini kunye neziteshi ezimbini ze-flat (nanopages) ezibekwe enye ngaphezu komnye, ejikelezwe macala onke ngesango. Iingcali ze-CEA-Leti ziye zabonisa ukuba kunokwenzeka ukuvelisa i-transistors kunye neendlela ezisixhenxe ze-nanopage kwaye ngexesha elifanayo usethe iziteshi kububanzi obufunekayo. Ngokomzekelo, i-GAA yokuhlola i-transistor eneziteshi ezisixhenxe yakhululwa kwiinguqulelo ezinobubanzi ukusuka kwi-15 nm ukuya kwi-85 nm. Kucacile ukuba oku kukuvumela ukuba ubeke iimpawu ezichanekileyo ze-transistors kwaye uqinisekise ukuphindaphinda kwazo (ukunciphisa ukusasazeka kweeparamitha).
Ngokutsho kwamaFrentshi, amanqanaba amaninzi etshaneli kwi-GAA transistor, ubukhulu bobubanzi obusebenzayo betshaneli iyonke kwaye, ngenxa yoko, ukulawulwa okungcono kwe-transistor. Kwakhona, kwisakhiwo se-multilayer kukho ukuvuza okuncinci okwangoku. Ngokomzekelo, i-GAA ye-transistor enemigangatho esixhenxe inokuphinda-phindwe kathathu okuvuzayo okungaphantsi kwangoku kunemigangatho emibini (ngokomlinganiselo, njenge-Samsung GAA). Ewe, ishishini ekugqibeleni lifumene indlela yokunyuka, lisuka ekubekweni okuthe tyaba kwezinto kwi-chip ukuya nkqo. Kubonakala ngathi ii-microcircuits aziyi kunyanzeleka ukuba zandise indawo yeekristale ukuze zikhawuleze, zibe namandla ngakumbi kwaye zisebenze kakuhle.
umthombo: 3dnews.ru