Kutshanje, kwi-Expo yesixhenxe ye-Electronic Information Expo (CITE2019) e-Shenzhen, i-SSD ye-SSD P8260 yokuqala, ehlanganiswe ngokukodwa kumacandelo aseTshayina, yaboniswa kwindawo ye-Tsinghua Unigroup. Le yi-SSD ye-server-grade apho umlawuli, i-DRAM buffer kunye ne-3D NAND uluhlu lwenziwe kwaye lwenziwa e-China. Ewe, iChina ithathe elinye inyathelo kwaye ilindele ukulandela le ndlela yokugqiba ukuzimela kwinkumbulo yemveliso yangaphandle.
Nabani na olandela iindaba malunga nophuhliso kunye nokuveliswa kwememori ye-3D NAND e-China uyazi ukuba ukuveliswa kwee-flash memory chips kuqhutyelwa ngokubambisana kunye neTsinghua, i-Yangtze River Storage Technology (YMTC). Iidrive ze-P8260 zineemveliso zokuqala ze-YMTC ezingama-32 ze-3Gb ze-64D NAND. Ngasekupheleni konyaka, umenzi uya kuqalisa ukuvelisa i-128 Gbit 64-layer 3D NAND chips, eziya kuvumela i-YMTC ukuba ifumaneke kurhwebo - ngelixa imveliso ilahlekile.
Imemori ye-DRAM ye-buffer ye-SSD iveliswa yi-Tsinghua subsidiary Guoxin Micro. Ubungakanani bebuffer abuchazwa. Umlawuli waphuhliswa yinkampani yaseTshayina iBeijing Ziguang Storage Technology, ekwadibaniswa neTsinghua Unigroup.
Umlawuli we-P8260 kunye ne-drive inkxaso ye-NVMe 1.2.1 protocol kunye ne-PCI Express 3.0 x4 interface. Inkxaso yeendlela ze-16 zeememori ziyabhengezwa, ezithembisa i-bandwidth ephezulu, kodwa idatha echanekileyo malunga nokusebenza kwe-P8260 nayo ayixelwa. Ukusebenza kunye ne-DRAM buffer, iprosesa inomlawuli wememori ye-channel-channel eyakhelwe-ngaphakathi kunye ne-40-bit yebhasi kunye nenkxaso ye-ECC. Iinguqulelo ezimbini ze-SSD P8260 zinikezelwe: kunye nomthamo we-1 kunye ne-2 TB kwiifom zefom yekhadi le-PCIe kunye ne-U.2 drive.
Ukongeza kwi-P8260 drives, umenzi uphinde wabonisa abathengi bee-SSD zeentsapho ze-P100 kunye ne-S100. Nangona kunjalo, inkampani ithenga imemori ye-3D NAND kwezi modeli kumaqabane. Omnye onjalo iqabane, umzekelo, Intel.
umthombo: 3dnews.ru