Kule veki inkampani yaseTshayina iYMTC kuphuhliso lwerekhodi-lokwaphula 128-umaleko 3D NAND flash memory. AmaTshayina aya kunqumla inqanaba lokuvelisa imemori ye-96 kwaye ekupheleni konyaka baya kuqalisa ngokukhawuleza ukuvelisa imemori ye-128. Ngaloo ndlela, baya kufikelela kwinqanaba leenkokeli zeshishini, elilingana nokuwangawangisa i-rag ebomvu phambi kwenkunzi yenkomo. Kwaye "iinkunzi" zasabela njengoko zilindelwe.
Indawo yaseMzantsi Korea i-ETNews namhlanje ukuba i-Samsung ikhawulezise uphuhliso lwe-160-layer 3D NAND (okanye i-V-NAND, njengoko inkampani ibiza imemori ye-flash multi-layer). I-Samsung iyibiza ngokuba "i-super gap", okanye idlala phambili, ekufuneka incede iinkokheli zetekhnoloji zaseMzantsi Korea zihlale phambi kokhuphiswano. Kuba impumelelo yeSamsung isembindini woqoqosho lwaseMzantsi Korea, ngumcimbi wempumelelo yesizwe siphela, ke inkampani iwuthatha ngqalelo umsebenzi wayo.
I-Samsung yazisa imemori ene-100+ iileya ngaphakathi . Sinokucinga ukuba inkampani ikhulule imemori ye-128 yesiqhelo kwikota yesithathu ngokulandelelana (inani elichanekileyo leeleya lihlala lingaziwa ngokuqinisekileyo). Okulandelayo kwindawo kufuneka ibe yimemori ye-Samsung kunye ne-160 okanye nangaphezulu. Iya kuba kwisizukulwana se-7 sememori ye-V-NAND. Ngokutsho kwamahemuhemu, inkampani yenze inkqubela ebonakalayo ekuphuhlisweni kwayo. Kukho uluvo lokuba i-Samsung iya kuba ngowokuqala ukufikelela kumanqaku angama-160, njengoko kwenzeka kuzo zonke izizukulwana zangaphambili zememori ye-3D NAND.
umthombo: 3dnews.ru