I-Samsung Electronics iyaqhubeka nokuntywila kwitekhnoloji yenkqubo ye-10 nm. Ngeli xesha, kwiinyanga nje ze-16 emva kokuqala kokuveliswa kobuninzi bememori ye-DDR4 kusetyenziswa iteknoloji yenkqubo yesizukulwana sesibini se-10nm (1y-nm), umenzi waseMzantsi Korea uye wagqiba ukuphuhliswa kwememori ye-DDR4 efa esebenzisa isizukulwana sesithathu seklasi ye-10 nm ( 1z-nm) inkqubo yetekhnoloji. Yintoni ebalulekileyo kukuba inkqubo yeklasi ye-10nm yesizukulwana sesithathu isasebenzisa i-193nm lithography scanners kwaye ayixhomekekanga kwi-EUV scanners esebenza kancinci. Oku kuthetha ukuba ukutshintshela kwimveliso yobuninzi bememori usebenzisa iteknoloji yenkqubo ye-1z-nm yamva nje iya kukhawuleza kwaye ngaphandle kweendleko zemali ezibalulekileyo zokuxhobisa kwakhona imigca.
Inkampani iya kuqalisa ukuveliswa kobuninzi beetshiphusi ze-8-Gbit DDR4 isebenzisa itekhnoloji yenkqubo ye-1z-nm yeklasi ye-10 nm kwisiqingatha sesibini salo nyaka. Njengoko ibiyinto eqhelekileyo ukususela ekutshintsheni kwi-teknoloji yenkqubo ye-20nm, i-Samsung ayivezi iinkcukacha ezichanekileyo zeteknoloji yenkqubo. Kucingelwa ukuba inkqubo yobugcisa yenkampani ye-1x-nm ye-10-nm yeklasi ihlangabezana nemigangatho ye-18 nm, inkqubo ye-1y-nm ihlangabezana nemigangatho ye-17 okanye ye-16-nm, kwaye i-1z-nm yamva idibana nemigangatho ye-16 okanye i-15-nm, kwaye mhlawumbi ukuya kuthi ga kwi-13 nm. Kwimeko nayiphi na into, ukunciphisa ubungakanani benkqubo yobugcisa kwakhona kwandisa isivuno seekristale ukusuka kwi-wafer enye, njengoko i-Samsung ivuma, ngama-20%. Kwixesha elizayo, oku kuya kuvumela inkampani ukuba ithengise imemori entsha ngexabiso eliphantsi okanye kumda ongcono de abo bakhuphisana nabo bafumane iziphumo ezifanayo kwimveliso. Nangona kunjalo, iyothusa kancinci into yokuba i-Samsung ayikwazanga ukwenza ikristale ye-1z-nm 16 Gbit DDR4. Oku kungabonisa ulindelo lokunyuka kwamazinga okusilela kwimveliso.
Ukusebenzisa isizukulwana sesithathu se-teknoloji yenkqubo yeklasi ye-10nm, inkampani iya kuba ngowokuqala ukuvelisa imemori yeseva kunye nememori yeePC eziphezulu. Kwixesha elizayo, iteknoloji yenkqubo yeklasi ye-1z-nm ye-10nm iya kulungelelaniswa ukuveliswa kwe-DDR5, LPDDR5 kunye nememori ye-GDDR6. Iiseva, izixhobo eziphathwayo kunye nemizobo ziya kukwazi ukusebenzisa ngokupheleleyo inkumbulo ekhawulezayo nangaphantsi yenkumbulo elambileyo, eya kuququzelelwa yinguqulelo kwimigangatho emincinci yokuvelisa.
umthombo: 3dnews.ru