Namhlanje i-Samsung Electronics malunga nezicwangciso zokuphuhliswa kweenkqubo zobugcisa zokuvelisa i-semiconductors. Inkampani ithathela ingqalelo ukuyilwa kweeprojekthi zedijithali zovavanyo lwetshiphusi ze-3-nm ezisekwe kwi-MBCFET transistors enelungelo elilodwa lomenzi wechiza njengeyona mpumelelo iphambili yangoku. Ezi ziitransistors ezinamatshaneli e-nanopage atyebileyo amaninzi kumasango e-FET athe nkqo (i-Multi-Bridge-Channel FET).
Njengenxalenye yomanyano kunye ne-IBM, i-Samsung yavelisa itekhnoloji eyahluke kancinane yokuvelisa iitransistors ezinetshaneli ezijikelezwe ngokupheleleyo ngamasango (GAA okanye iSango-All-Around). Iziteshi zazifanele zenziwe zincinci ngendlela ye-nanowires. Emva koko, i-Samsung yasuka kude kwesi sikimu kwaye yafumana ilungelo elilodwa lomenzi wesakhiwo se-transistor kunye namajelo ngendlela yeenanopages. Esi sakhiwo sikuvumela ukuba ulawule iimpawu ze-transistors ngokulawula zombini inani lamaphepha (iitshaneli) kunye nokulungelelanisa ububanzi bamaphepha. Kwitekhnoloji ye-FET yakudala, inkqubo enjalo ayinakwenzeka. Ukwandisa amandla e-FinFET transistor, kuyimfuneko ukuphindaphinda inani le-FET fins kwi-substrate, kwaye oku kufuna indawo. Iimpawu ze-MBCFET transistor zingatshintshwa ngaphakathi kwesango elilodwa lomzimba, apho kufuneka ubeke ububanzi bamajelo kunye nenani lawo.
Ubukho boyilo lwedijithali (i-taped out) yeprototype chip yokuvelisa kusetyenziswa inkqubo ye-GAA ivumele i-Samsung ukuba imisele imida yesakhono se-MBCFET transistors. Kufuneka kukhunjulwe engqondweni ukuba oku kuseyidatha yemodeli yekhompyutheni kwaye inkqubo entsha yobugcisa inokugwetywa kuphela ekugqibeleni emva kokuba iqaliswe kwimveliso yobuninzi. Nangona kunjalo, kukho indawo yokuqala. Inkampani yathi ukutshintshwa kwenkqubo ye-7nm (ngokucacileyo isizukulwana sokuqala) kwinkqubo ye-GAA iya kubonelela ngokunciphisa i-45% kwindawo yokufa kunye nokunciphisa i-50% yokusetyenziswa. Ukuba awongi ekusetyenzisweni, imveliso inokunyuswa ngama-35%. Ngaphambili, i-Samsung yabona ukonga kunye nenzuzo yemveliso xa isiya kwinkqubo ye-3nm yahlulwe ziikoma. Kwavela ukuba enye okanye enye.
Inkampani iqwalasela ukulungiswa kweqonga lelifu likawonkewonke kubaphuhlisi be-chip abazimeleyo kunye neenkampani ezingenayo i-fabless ukuba ibe yinto ebalulekileyo ekudumeni iteknoloji yenkqubo ye-3nm. I-Samsung ayizange ifihle indawo yophuhliso, ukuqinisekiswa kweprojekthi kunye namathala eencwadi kwiiseva zokuvelisa. I-SAFE (i-Samsung Advanced Foundry Ecosystem Cloud) iqonga liya kufumaneka kubayili kwihlabathi liphela. Iqonga lelifu eliKhuselekileyo ladalwa ngokuthatha inxaxheba kwezona nkonzo ziphambili zamafu oluntu njengeeNkonzo zeWebhu ye-Amazon (AWS) kunye neMicrosoft Azure. Abaphuhlisi beenkqubo zoyilo ezivela kwiCadence kunye ne-Synopsys babonelele ngezixhobo zabo zokuyila ngaphakathi kwe-SAFE. Oku kuthembisa ukwenza kube lula kwaye kungabizi ukwenza izisombululo ezitsha kwiinkqubo ze-Samsung.
Ukubuyela kwitekhnoloji yenkqubo ye-Samsung ye-3nm, masiyongeze ukuba inkampani iveze inguqulelo yokuqala yephakheji yophuhliso lwe-chip - 3nm GAE PDK Version 0.1. Ngoncedo lwayo, ungaqala ukuyila izisombululo ze-3nm namhlanje, okanye ubuncinane ulungiselele ukuhlangabezana nale nkqubo ye-Samsung xa isasazeka.
I-Samsung ibhengeza izicwangciso zayo zexesha elizayo ngolu hlobo lulandelayo. Kwisiqingatha sesibini salo nyaka, ukuveliswa kobuninzi beechips usebenzisa inkqubo ye-6nm kuya kuqaliswa. Ngexesha elifanayo, ukuphuhliswa kweteknoloji yenkqubo ye-4nm kuya kugqitywa. Ukuphuhliswa kwemveliso yokuqala ye-Samsung esebenzisa inkqubo ye-5nm iya kugqitywa ngeli xesha, kunye nokuqaliswa kwemveliso kwisiqingatha sokuqala sonyaka ozayo. Kwakhona, ekupheleni kwalo nyaka, i-Samsung iya kugqiba ukuphuhliswa kweteknoloji yenkqubo ye-18FDS (i-18 nm kwi-FD-SOI wafers) kunye ne-1-Gbit eMRAM chips. Itekhnoloji yenkqubo ukusuka kwi-7 nm ukuya kwi-3 nm iya kusebenzisa iiskena ze-EUV ngokuqina okwandayo, ukwenza ukubalwa kwenanometer nganye. Ngokubhekele phaya endleleni ehlayo, onke amanyathelo aya kuthathwa ngomlo.
umthombo: 3dnews.ru