Ngokutsho imithombo ishishini eTaiwan, leyo Umthombo we-Intanethi we-DigiTimes, umenzi wememori waseTshayina i-ChangXin Memory Technologies (CXMT) ikwi-special swing ilungiselela imigca yokuvelisa ngobuninzi bememori ye-LPDDR4. I-ChangXin, ekwabizwa ngokuba yi-Innotron Memory, kuthiwa iphuhlise eyayo inkqubo yokuvelisa i-DRAM isebenzisa itekhnoloji ye-19nm.
Kwimveliso yorhwebo yenkumbulo kwishishini layo lokuqala le-300 mm, iChangXin kwafuneka yenze kwisiqingatha sokuqala sika-2019. Yeha, oku akukenzeki. Kodwa ukuqala kokuveliswa kweetshiphusi ze-8-Gbit DDR4 LPDDR4 kuya kukhatshwa kukwandiswa komthamo ukuya kuma-20 amawaka angama-300-nm we-silicon wafers ngenyanga. Umthamo omkhulu wemigca kwishishini le-ChangXin lifikelela kwi-125 lamawaka angama-300 mm wafers ngenyanga. Kodwa oku kwakhona akusiyo umda. Inkampani ithe izakuqala ukwakha isityalo sesibini kulo nyaka uzayo ukuze isebenze ii-wafers zememori ezingama-300mm.
Kwangaxeshanye, lo menzi waseTshayina unokujamelana neengxaki zolunye uhlobo. Masikhumbule ukuba inkampani yokuqala yaseTshayina eyayiza kuqalisa ukuveliswa kobuninzi bememori ye-DRAM yayinguFujian Jinhua. I-USA ngokuvalwa kokuthenga izixhobo zokuvelisa kumaqabane aseMelika. ETaiwan, bakholelwa ukuba iChangXin iya kujongana neengxaki ezifanayo neFujian. Ukongeza, yaqesha iinjineli eziqeqeshiweyo kwi-subsidiary yangaphambili yaseTaiwan ye-Elpida yaseJapan, ishishini layo lathatyathwa yi-American Micron. Abahlalutyi balindele izimangalo ezichasene neChangXin ezivela kwiMicron kunye nezohlwayo ukuba icala laseTshayina aliphenduli.
Ngokunxuseneyo, iChangXin iphuhlisa inkqubo yobugcisa yokuvelisa imemori enemigangatho eyi-17 nm. Ukugqitywa kophuhliso kulindeleke ngo-2021. Mhlawumbi, isityalo sesibini seChangXin siya kuqala ukusebenza kunye nokuveliswa kweekristale ze-DRAM ngale migangatho. Ngaphandle kokuba, ewe, izohlwayo zase-US kunye nobuqhetseba bukaMicron buba ngumqobo ongenakoyiswa endleleni yakhe.
umthombo: 3dnews.ru