Itekhnoloji entsha yokuvelisa i-nanometer semiconductors iye yaphuhliswa e-USA

Akunakwenzeka ukucinga ngophuhliso olongezelelweyo lwe-microelectronics ngaphandle kokuphucula iteknoloji yokuvelisa i-semiconductor. Ukwandisa imida kwaye ufunde indlela yokuvelisa izinto ezincinci kwiikristale, itekhnoloji entsha kunye nezixhobo ezitsha ziyafuneka. Enye yezi teknoloji inokuba luphuhliso oluyimpumelelo lwezazinzulu zaseMelika.

Itekhnoloji entsha yokuvelisa i-nanometer semiconductors iye yaphuhliswa e-USA

Iqela labaphandi abavela kwiSebe lezaMandla lase-US kwi-Argonne National Laboratory iphuhlile ubuchule obutsha bokudala kunye nokufaka iifilimu ezibhityileyo kumphezulu weekristale. Oku kunokukhokelela ekuvelisweni kweetshiphusi kwinqanaba elincinci kunanamhlanje nakwixesha elizayo elingekude. Uphononongo lwapapashwa kwiphephancwadi Chemistry of Materials.

Ubuchule obucetywayo bufana nenkqubo yemveli ukubekwa komaleko weathom kunye ne-etching, kuphela endaweni yeefilimu ezingaphiliyo, itekhnoloji entsha idala kwaye isebenze ngeefilimu eziphilayo. Ngokwenyani, ngomzekeliso, itekhnoloji entsha ibizwa ngokuba yi-molecular layer deposition (MLD, i-molecular layer deposition) kunye ne-molecular layer etching (MLE, i-molecular layer etching).

Njengakwimeko ye-atomic layer etching, indlela ye-MLE isebenzisa unyango lwegesi kwigumbi lomphezulu wekristale kunye neefilimu zezinto ezisekelwe kwizinto eziphilayo. Ikristale iphathwa ngebhayisekile ngeegesi ezimbini ezahlukeneyo ngokutshintshanayo de ifilimu incitywe ibe bukhulu obunikiweyo.

Iinkqubo zemichiza zixhomekeke kwimithetho yokuzilawula. Oku kuthetha ukuba umaleko emva komaleko ususwe ngokulinganayo nangendlela elawulwayo. Ukuba usebenzisa ii-photomasks, unokuphinda uvelise i-topology ye-chip yexesha elizayo kwi-chip kwaye udibanise uyilo ngokuchaneka okuphezulu.

Itekhnoloji entsha yokuvelisa i-nanometer semiconductors iye yaphuhliswa e-USA

Kuvavanyo, izazinzulu zasebenzisa irhasi equlethe iityuwa ze-lithium kunye negesi esekwe kwi-trimethylaluminium ye-molecular etching. Ngethuba lenkqubo ye-etching, i-lithium compound yasabela kunye nomphezulu wefilimu ye-alucone ngendlela yokuba i-lithium ifakwe phezu komhlaba kwaye itshabalalise i-chemical bond kwifilimu. Emva koko i-trimethylaluminium yanikezelwa, eyasusa umgca wefilimu kunye ne-lithium, kwaye ngoko-nye enye ide ifilimu iyancipha ibe yinto efunwayo. Ukulawulwa kakuhle kwenkqubo, izazinzulu zikholelwa, zinokuvumela iteknoloji ecetywayo ukuba iqhube uphuhliso lwemveliso ye-semiconductor.



umthombo: 3dnews.ru

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