Njengoko kuye kwaxelwa amaxesha amaninzi, kukho into ekufuneka yenziwe nge-transistor encinci kune-5 nm. Namhlanje, abavelisi beetshiphu bavelisa ezona zisombululo ziphezulu besebenzisa amasango e-FinFET athe nkqo. I-FinFET transistors isenokuveliswa kusetyenziswa iinkqubo zobugcisa ze-5-nm kunye ne-4-nm (nokuba le migangatho ithetha ntoni na), kodwa sele ikwinqanaba lokuvelisa i-semiconductors ye-3-nm, izakhiwo ze-FinFET ziyeka ukusebenza njengoko zifanele. Amasango e-transistors amancinci kakhulu kwaye i-voltage yokulawula ayincinci ngokwaneleyo ukuba i-transistors iqhubeke nokwenza umsebenzi wabo njengamasango kwiisekethe ezidibeneyo. Ngoko ke, imboni kwaye, ngokukodwa, i-Samsung, eqala kwi-teknoloji yenkqubo ye-3nm, iya kutshintshela kwimveliso ye-transistors ngendandatho okanye yonke i-GAA (iSango-All-Around) yamasango. Ngokukhutshwa kweendaba esitsha, i-Samsung isandula ukubonisa i-infographic ebonakalayo malunga nokwakhiwa kwee-transistors ezintsha kunye nezibonelelo zokuzisebenzisa.
Njengoko kubonisiwe kulo mzekeliso ungasentla, njengoko imigangatho yokuvelisa iye yehla, amasango aye avela kwizakhiwo ezicwangcisiweyo ezinokulawula indawo enye phantsi kwesango, ukuya kwimijelo ethe nkqo erhangqwe lisango kumacala amathathu, aze ekugqibeleni asondele kufutshane nemijelo erhangqwe ngamasango anamasango. macala omane. Le ndlela yonke yayihamba kunye nokunyuka kwendawo yesango ejikeleze umjelo olawulwayo, okwenza kube lula ukunciphisa ukunikezelwa kwamandla kwi-transistors ngaphandle kokunciphisa iimpawu zangoku ze-transistors, ngoko ke, okukhokelela ekunyuseni kokusebenza kwee-transistors. kunye nokuncipha kwemisinga yokuvuza. Ngokumalunga noku, iitransistors ze-GAA ziya kuba sisithsaba esitsha sokudala kwaye aziyi kufuna kusetyenzwa kwakhona okubalulekileyo kweenkqubo zobuchwepheshe zeCMOS.
Imijelo ejikelezwe ngesango inokuveliswa mhlawumbi ngendlela yeebhuloho ezincinci (nanowires) okanye ngendlela yeebhuloho ezibanzi okanye i-nanopages. I-Samsung ibhengeza ukhetho lwayo ngokuthanda ii-nanopages kunye namabango okukhusela uphuhliso lwayo ngamalungelo awodwa omenzi wechiza, nangona iphuhlise zonke ezi zakhiwo ngelixa ingena kumfelandawonye ne-IBM kunye nezinye iinkampani, umzekelo, nge-AMD. I-Samsung ayizukubiza i-transistors entsha nge-GAA, kodwa igama lobunikazi i-MBCFET (i-Multi Bridge Channel FET). Amaphepha omzila obanzi aya kunika imisinga ebalulekileyo, okunzima ukuyifumana kwimeko ye-nanowire channels.
Ukutshintshela kumasango eringi kwakhona kuya kuphucula ukusebenza kakuhle kwamandla kwizakhiwo ezitsha zetransistor. Oku kuthetha ukuba i-voltage yokubonelela ye-transistors ingancitshiswa. Kwizakhiwo ze-FinFET, inkampani ibiza umda wokunciphisa amandla anemiqathango 0,75 V. Ukutshintshela kwi-MBCFET transistors kuya kuthoba lo mda nangaphantsi.
Inkampani ibiza inzuzo elandelayo ye-MBCFET transistors ukuguquguquka okungaqhelekanga kwezisombululo. Ke, ukuba iimpawu ze-FinFET transistors kwinqanaba lemveliso zinokulawulwa kuphela ngokufihlakeleyo, ngokubeka inani elithile lemiphetho kwiprojekthi ye-transistor nganye, emva koko ukuyila iisekethe ezine-MBCFET transistors ziya kufana neyona ndlela ilungileyo yokulungiswa kweprojekthi nganye. Kwaye oku kuya kuba lula kakhulu ukwenza: kuya kukwanela ukukhetha ububanzi obufunekayo beziteshi ze-nanopage, kwaye le parameter ingatshintshwa ngokuhambelana.
Ukuveliswa kwee-transistors ze-MBCFET, njengoko kukhankanyiwe ngasentla, iteknoloji yenkqubo ye-CMOS yakudala kunye nezixhobo zoshishino ezifakwe kwiifektri zifanelekile ngaphandle kotshintsho olubalulekileyo. Kuphela inqanaba lokucwangcisa i-silicon wafers liya kufuna ukuguqulwa okuncinci, okuqondakalayo, kwaye yiyo yonke loo nto. Kwinxalenye yamaqela oqhagamshelwano kunye neengqimba ze-metallization, akudingeki ukuba utshintshe nantoni na.
Ukuqukumbela, i-Samsung okokuqala ngqa inika inkcazo esemgangathweni yophuculo oluya kuziswa yi-3nm yetekhnoloji yenkqubo kunye ne-MBCFET transistors (ukucacisa, i-Samsung ayithethi ngokuthe ngqo ngetekhnoloji yenkqubo ye-3nm, kodwa yaxela ngaphambili ukuba iteknoloji yenkqubo ye-4nm isaza kusebenzisa iitransistor zeFinFET). Ngoko, xa kuthelekiswa neteknoloji yenkqubo ye-FinFET ye-7nm, ukufudukela kwindlela entsha kunye ne-MBCFET iya kubonelela ngokunciphisa i-50% yokusetyenziswa, ukunyuka kwe-30% ekusebenzeni kunye nokunciphisa i-45% kwindawo ye-chip. Hayi "nokuba, okanye", kodwa ngokupheleleyo. Kuya kwenzeka nini oku? Kwenzeka ukuba ekupheleni kuka-2021.
umthombo: 3dnews.ru