Ngokusho kwewebhusayithi ye-IEEE Spectrum, kusukela ekupheleni kukaFebhuwari kuya ekuqaleni kukaMashi, kwakhiwa ilabhorethri esikhungweni saseBelgian Imec kanye nenkampani yaseMelika i-KMLabs ukutadisha izinkinga nge-semiconductor photolithography ngaphansi kwethonya lemisebe ye-EUV (e-ultra- uhla oluqinile lwe-ultraviolet). Kubukeka sengathi, yini ekhona yokufunda lapha? Cha, kunesihloko okufanele sifundwe, kodwa kungani kusungulwe ilabhorethri entsha yalokhu? AbakwaSamsung baqale ukukhiqiza ama-chips angu-7nm ngokusebenzisa izikena ze-EUV ezinyangeni eziyisithupha ezedlule. I-TSMC izoyijoyina maduze kulo mzamo. Ekupheleni konyaka, bobabili bazoqala ukukhiqiza okuyingozi ngamazinga angu-5 nm nokunye. Futhi nokho kunezinkinga, futhi zibucayi ngokwanele ukuthi izimpendulo zemibuzo kufanele zifunwe kuma-laboratories, hhayi ekukhiqizeni.
Inkinga enkulu ku-EUV lithography namuhla ihlala iyikhwalithi ye-photoresist. Umthombo wemisebe ye-EUV yi-plasma, hhayi i-laser, njengoba kunjalo ngezikena ezindala ezingu-193 nm. Ilaser ihwamulisa iconsi lomthofu endaweni enegesi futhi imisebe ewumphumela ikhipha ama-photon, amandla awo aphakeme ngokuphindwe izikhathi ezingu-14 kunamandla ama-photon akuzikena ezinemisebe ye-ultraviolet. Ngenxa yalokho, i-photoresist ayibhujiswa kuphela kulezo zindawo lapho ihlaselwa khona ngama-photon, kodwa futhi kwenzeka amaphutha angahleliwe, okuhlanganisa ngenxa yalokho okubizwa ngokuthi umphumela womsindo we-fractional. Amandla ama-photon aphezulu kakhulu. Ukuhlola ngezikena ze-EUV kubonisa ukuthi ama-photoresist, asekwazi ukusebenza namazinga angu-7 nm, esimweni sokukhiqiza amasekhethi angu-5 nm abonisa izinga eliphezulu kakhulu lokukhubazeka. Inkinga ibucayi kangangokuthi ochwepheshe abaningi abakholelwa ekuqalisweni okuphumelelayo okusheshayo kobuchwepheshe benqubo ye-5 nm, ingasaphathwa ukuguqulwa ku-3 nm nangaphansi.
Inkinga yokudala isizukulwane esisha se-photoresist izozanywa ukuthi ixazululwe elabhorethri ehlangene ye-Imec ne-KMLabs. Futhi bazoyixazulula ngombono wendlela yesayensi, hhayi ngokukhetha ama-reagents, njengoba kuye kwenziwa eminyakeni engamashumi amathathu edlule. Ukwenza lokhu, ozakwethu besayensi bazokwakha ithuluzi locwaningo oluningiliziwe lwezinqubo zomzimba namakhemikhali ku-photoresist. Ngokuvamile, ama-synchrotron asetshenziselwa ukutadisha izinqubo ezingeni lamangqamuzana, kodwa i-Imec ne-KMLabs bahlela ukudala ukuqagela kwe-EUV nokokusebenza kokulinganisa ngokusekelwe kumalaser e-infrared. I-KMLabs inguchwepheshe kumasistimu we-laser.
Ngokusekelwe ekufakweni kwe-laser ye-KMLabs, kuzokwakhiwa inkundla yokukhiqiza ama-harmonics we-oda eliphezulu. Ngokuvamile, ngenxa yale njongo, i-high-intensity laser pulse iqondiswe endaweni enegesi lapho ama-harmonics aphezulu kakhulu we-pulse eqondisiwe avela khona. Ngokuguqulwa okunjalo, ukulahlekelwa okukhulu kwamandla kwenzeka, ngakho-ke isimiso esifanayo sokukhiqiza imisebe ye-EUV ayikwazi ukusetshenziselwa ngokuqondile i-semiconductor lithography. Kodwa lokhu kwanele ekuhloleni. Okubaluleke kakhulu, imisebe ewumphumela ingalawulwa kokubili ubude be-pulse kusuka kuma-picoseconds (10-12) kuya kuma-attoseconds (10-18), kanye nobude begagasi ukusuka ku-6,5 nm kuya ku-47 nm. Lezi izimfanelo ezibalulekile zensimbi yokulinganisa. Bazosiza ukutadisha izinqubo zezinguquko zamangqamuzana asheshayo ku-photoresist, izinqubo ze-ionization kanye nokuchayeka kuma-photons anamandla amakhulu. Ngaphandle kwalokhu, i-photolithography yezimboni enamazinga angaphansi kuka-3 ngisho no-5 nm isalokhu ibuzwa.
Source: 3dnews.ru