Ukuguquka kusuka ku-silicon kuya kuma-semiconductors ane-bandgap ebanzi (i-gallium nitride, i-silicon carbide nezinye) kungakhuphula kakhulu amaza okusebenza futhi kuthuthukise ukusebenza kahle kwezixazululo. Ngakho-ke, enye yezindawo ezithembisayo zokusetshenziswa kwama-chips nama-transistors anegebe elibanzi ukuxhumana nama-radar. Ama-elekthronikhi asekelwe kuzixazululo ze-GaN "ngaphandle kokuluhlaza okwesibhakabhaka" anikeza ukwanda kwamandla kanye nokwandiswa kohlu lwama-radar, amasosha awasebenzisa ngokushesha.
Inkampani ye-Lockheed Martin ukuthi amayunithi okuqala e-radar eselula (ama-radar) asekelwe ku-electronics anezici ezenziwe nge-gallium nitride alethwe emabuthweni ase-US. Inkampani ayizange iqhamuke nento entsha. I-AN/TPQ-2010 i-counter-battery radars, eyamukelwa kusukela ngo-53, idluliselwe kusisekelo se-elementi ye-GaN. Lena iradar yokuqala futhi kuze kube manje ukuphela kwe-wide-gap semiconductor radar emhlabeni.
Ngokushintshela ezingxenyeni ezisebenzayo ze-GaN, i-radar ye-AN/TPQ-53 ikhulise ibanga lokutholwa lezindawo zezikhali ezivaliwe futhi yazuza amandla okulandelela ngesikhathi esisodwa okuqondiwe komoya. Ikakhulukazi, i-radar ye-AN/TPQ-53 yaqala ukusetshenziswa ngokumelene nama-drones, kuhlanganise nezimoto ezincane. Ukuhlonzwa kwezindawo zezikhali ezimboziwe kungenziwa kokubili emkhakheni we-90-degree kanye nombono we-360-degree nxazonke.
U-Lockheed Martin ukuphela komhlinzeki wama-radar asebenza ngezigaba (uhlu olunezigaba) ebuthweni laseMelika. Ukushintshela kusisekelo sesici se-GaN kuyivumela ukuthi ithembele ebuholini obengeziwe besikhathi eside emkhakheni wokwenza ngcono nokukhiqizwa kokufakwa kwe-radar.
Source: 3dnews.ru