Isikhathi eside , ukuthi kusukela kubuchwepheshe benqubo ye-3nm, ama-transistors azosuka eziteshini ze-FinFET eziqondile "ze-fin" aye eziteshini ze-nanopage ezivundlile ezizungezwe ngokuphelele amasango noma i-GAA (isango-around). Namuhla, isikhungo saseFrance i-CEA-Leti sibonise ukuthi izinqubo zokukhiqiza ama-transistor e-FinFET zingasetshenziswa kanjani ukukhiqiza ama-transistors e-GAA anamazinga amaningi. Futhi ukugcina ukuqhubeka kwezinqubo zobuchwepheshe kuyisisekelo esithembekile soshintsho olusheshayo.
Ochwepheshe be-CEA-Leti bochungechunge lwe-VLSI Technology & Circuits 2020 mayelana nokukhiqizwa kwe-transistor ye-GAA enamazinga ayisikhombisa (sibonga ngokukhethekile ubhubhane lwe-coronavirus, ngenxa yokuthi imibhalo yezethulo ekugcineni yaqala ukuvela ngokushesha, hhayi izinyanga ngemuva kwezingqungquthela). Abacwaningi baseFrance baye bafakazela ukuthi bangakwazi ukukhiqiza ama-GAA transistors aneziteshi ngendlela ye-"stack" yonke yama-nanopages besebenzisa ubuchwepheshe obusetshenziswa kakhulu benqubo ebizwa ngokuthi i-RMG (isango elishintshayo lensimbi noma, ngesiRashiya, insimbi eshintshayo (yesikhashana) Isango). Ngesinye isikhathi, inqubo yezobuchwepheshe ye-RMG yashintshwa ukuze kukhiqizwe ama-transistors e-FinFET futhi, njengoba sibona, inganwetshwa ekukhiqizeni ama-transistors e-GAA ngohlelo lwamazinga amaningi eziteshi ze-nanopage.
I-Samsung, ngokwazi kwethu, ngokuqala kokukhiqizwa kwama-chips angu-3-nm, ihlela ukukhiqiza ama-transistors we-GAA anezinga ezimbili ezineziteshi ezimbili eziyisicaba (ama-nanopages) atholakala ngaphezu kwesinye, azungezwe nxazonke ngesango. Ochwepheshe be-CEA-Leti baye babonisa ukuthi kungenzeka ukukhiqiza ama-transistors aneziteshi eziyisikhombisa ze-nanopage futhi ngesikhathi esifanayo usethe iziteshi ububanzi obudingekayo. Isibonelo, i-transistor ye-GAA yokuhlola eneziteshi eziyisikhombisa ikhishwe ngezinguqulo ezinobubanzi obusuka ku-15 nm kuya ku-85 nm. Kuyacaca ukuthi lokhu kukuvumela ukuthi usethe izici eziqondile zama-transistors futhi uqinisekise ukuphindaphinda kwazo (ukunciphisa ukusabalala kwamapharamitha).
Ngokusho kwamaFulentshi, uma amazinga esiteshi engeziwe ku-transistor ye-GAA, bukhulu ububanzi obusebenzayo besiteshi esiphelele, ngakho-ke, ukulawuleka okungcono kwe-transistor. Futhi, esakhiweni se-multilayer kukhona ukuvuza okuncane kwamanje. Isibonelo, i-GAA transistor enamaleveli ayisikhombisa inamaza okuvuza aphansi ngokuphindwe kathathu kuneleveli eyodwa (ngokuqhathaniswa, njenge-Samsung GAA). Nokho, imboni ekugcineni isiyitholile indlela ekhuphukayo, isuka ekubekweni okuvundlile kwezakhi ku-chip iye mpo. Kubonakala sengathi ama-microcircuits ngeke kudingeke ukuthi andise indawo yamakristalu ukuze asheshe nakakhulu, abe namandla kakhulu futhi asebenzise amandla.
Source: 3dnews.ru