Njengoba sazi, ukushintshela kubuchwepheshe benqubo ye-3 nm kuzohambisana nokushintshela ekwakhiweni okusha kwe-transistor. Ngokwemibandela ye-Samsung, ngokwesibonelo, lezi kuzoba yi-MBCFET (Multi Bridge Channel FET) transistors, lapho isiteshi se-transistor sizobukeka njengamashaneli amaningana abekwe ngaphezulu kwesinye ngesimo sama-nanopages, azungezwe yisango nxazonke (imininingwane eyengeziwe). , bheka ).
Ngokusho konjiniyela abavela esikhungweni sase-Belgian i-Imec, lesi yisakhiwo se-transistor esiqhubekayo, kodwa esingafanelekile sisebenzisa amasango e-FinFET aqondile. Ilungele izinqubo zobuchwepheshe ezinezikali zezinto ezingaphansi kuka-3 nm , eyahlongozwa abaseBelgium.
I-Imec ithuthukise i-transistor enamakhasi ahlukene noma i-Forksheet. Lawa ama-nanopages aqondile afanayo njengamashaneli e-transistor, kodwa ahlukaniswe i-dielectric eqondile. Ngakolunye uhlangothi lwe-dielectric, i-transistor ene-n-channel yenziwa, ngakolunye, nge-p-channel. Futhi zombili zizungezwe i-shutter evamile ngesimo sombambo oqondile.
Ukunciphisa ibanga le-on-chip phakathi kwama-transistors ane-conductivity ehlukene kungenye inselele enkulu yokwehliswa kwenqubo eyengeziwe. Ukulingiswa kwe-TCAD kuqinisekisile ukuthi i-transistor enamakhasi ahlukene izohlinzeka ngokunciphisa ngamaphesenti angama-20 endaweni yokufa. Ngokuvamile, i-architecture entsha ye-transistor izonciphisa ubude beseli enengqondo ibe amathrekhi angu-4,3. Iseli lizoba lula, okuphinde kusebenze ekukhiqizeni iseli yenkumbulo ye-SRAM.
Ushintsho olulula olusuka ku-nanopage transistor ukuya ku-nanopage transistor oluhlukanisiwe luzohlinzeka ngokunyuka kwe-10% ekusebenzeni ngenkathi kugcinwa ukusetshenziswa, noma ukunciphisa ngo-24% kokusetshenziswa ngaphandle kokuthola ukusebenza. Ukulingisa kwenqubo ye-2nm kubonise ukuthi iseli le-SRAM lisebenzisa ama-nanopages ahlukanisiwe linganikeza ukuncipha kwendawo ehlanganisiwe nokuthuthukiswa kokusebenza okungafika kokungu-30% ngesikhala se-p- kanye ne-n-junction esingafika ku-8 nm.
Source: 3dnews.ru