Muva nje, embukisweni wesikhombisa we-China Electronic Information Expo (CITE2019) e-Shenzhen, idrayivu yokuqala eqinile ye-SSD P8260, eqoqwe ngokukhethekile ezingxenyeni zaseShayina, ikhonjiswe esitebeleni seTsinghua Unigroup. Lena i-SSD ye-server-grade lapho isilawuli, i-DRAM buffer kanye ne-3D NAND yamalungu afanayo aklanywa futhi akhiqizwa e-China. Yebo, i-China ithathe esinye isinyathelo futhi ilindele ukulandela le ndlela ukuze iqedele ukuzimela esikhumbuzweni sokukhiqizwa kwamanye amazwe.
Noma ubani olandela izindaba mayelana nokuthuthukiswa nokukhiqizwa kwememori ye-3D NAND e-China uyazi ukuthi ukukhiqizwa kwama-flash memory chips kwenziwa ngokubambisana ne-Tsinghua, i-Yangtze River Storage Technology (YMTC). Amadrayivu e-P8260 asebenzisa imikhiqizo yokuqala ye-YMTC yezendlalelo ezingama-32 Gb 3D NAND. Ngasekupheleni konyaka, umkhiqizi uzoqala ukukhiqiza ama-chips angu-64 Gbit 128-layer 64D NAND, azovumela i-YMTC ukuthi itholakale ngokwentengiso - kuyilapho ukukhiqizwa kulahleka.
Inkumbulo ye-DRAM yebhafa ye-SSD ikhiqizwa inkampani engaphansi kwe-Tsinghua i-Guoxin Micro. Usayizi webhafa awubikwanga. Isilawuli sakhiwe yinkampani yaseChina iBeijing Ziguang Storage Technology, ebuye ihlotshaniswe neTsinghua Unigroup.
Isilawuli se-P8260 nedrayivu zisekela iphrothokholi ye-NVMe 1.2.1 nesixhumi esibonakalayo se-PCI Express 3.0 x4. Ukusekelwa kweziteshi zememori eziyi-16 kumenyezelwe, okuthembisa umkhawulokudonsa ophezulu, kodwa idatha eqondile ekusebenzeni kwe-P8260 nayo ayibikwa. Ukuze isebenze nebhafa ye-DRAM, iphrosesa inesilawuli sememori seziteshi ezimbili esakhelwe ngaphakathi esinosekelo lwebhasi elingu-40-bit kanye ne-ECC. Kwethulwa izinguqulo ezimbili ze-SSD P8260: enamandla angu-1 no-2 TB ngendlela yekhadi le-PCIe kanye nedrayivu ye-U.2.
Ngokungeziwe kumadrayivu e-P8260, umenzi uphinde wabonisa ama-SSD abathengi bemindeni ye-P100 ne-S100. Nokho, inkampani ithenga inkumbulo ye-3D NAND yalawa mamodeli kozakwethu. Omunye umlingani onjalo, isibonelo, i-Intel.
Source: 3dnews.ru