“Ukunqoba” Umthetho kaMoore: Transistor Technologies of the Future

Sikhuluma ngezinye izindlela ze-silicon.

“Ukunqoba” Umthetho kaMoore: Transistor Technologies of the Future
/isithombe ULaura Ockel Unsplash

Umthetho kaMoore, uMthetho kaDennard kanye noMthetho ka-Coomey zilahlekelwa ukuhambisana. Esinye sezizathu ukuthi ama-silicon transistors asondela emkhawulweni wawo wezobuchwepheshe. Sixoxe kabanzi ngalesi sihloko kokuthunyelwe kwangaphambilini. Namuhla sikhuluma ngezinto esikhathini esizayo ezingangena esikhundleni se-silicon futhi zandise ukufaneleka kwemithetho emithathu, okusho ukwandisa ukusebenza kahle kwamaphrosesa kanye nezinhlelo zekhompyutha ezizisebenzisayo (kuhlanganise namaseva ezikhungweni zedatha).

I-carbon nanotubes

Ama-nanotubes e-carbon angamasilinda anezindonga zawo ezihlanganisa ungqimba lwe-monatomic lwe-carbon. Irediyasi yama-athomu ekhabhoni incane kunaleyo ye-silicon, ngakho-ke ama-transistors asekelwe ku-nanotube anokunyakaza kwama-electron aphezulu kanye nokuminyana kwamanje. Ngenxa yalokho, ijubane lokusebenza le-transistor liyakhula futhi ukusetshenziswa kwayo kwamandla kuncipha. Ngu ngokusho onjiniyela abavela eNyuvesi yaseWisconsin-Madison, ukukhiqiza kukhula ngokuphindwe kahlanu.

Iqiniso lokuthi i-carbon nanotubes inezici ezingcono kune-silicon beyaziwa isikhathi eside - ama-transistors okuqala avela. eminyakeni engu-20 edlule. Kodwa muva nje ososayensi baye bakwazi ukunqoba imingcele eminingi yezobuchwepheshe ukuze bakhe umshini osebenza ngokwanele. Eminyakeni emithathu edlule, izazi zefiziksi ezivela eNyuvesi yaseWisconsin esezibalulwe kakade zethula isibonelo se-transistor esekwe ku-nanotube, esebenza kahle kakhulu kunemishini yesimanje ye-silicon.

Okunye ukusetshenziswa kwamadivaysi asekelwe ku-carbon nanotubes i-electronics flexible. Kodwa kuze kube manje ubuchwepheshe abukadluli ilabhorethri futhi akukho nkulumo yokuqaliswa kwayo ngobuningi.

Ama-nanoribhoni we-graphene

Ziyimicu emincane igraphene amashumi amaningana ama-nanometers ububanzi futhi kuyabhekwa enye yezinto eziyinhloko zokwakha ama-transistors wesikhathi esizayo. Impahla eyinhloko ye-graphene tape yikhono lokusheshisa lamanje eligeleza kuyo usebenzisa insimu kazibuthe. Ngesikhathi esifanayo, i-graphene inezikhathi ezingama-250 conductivity kagesi okukhulu kune-silicon.

Ngu idatha ethile, amaphrosesa asekelwe kuma-graphene transistors azokwazi ukusebenza kumafrikhwensi aseduze ne-terahertz. Ngenkathi imvamisa yokusebenza yama-chips anamuhla isethwe ku-4-5 gigahertz.

I-prototypes yokuqala ye-graphene transistors yavela eminyakeni eyishumi edlule. Kusukela lapho onjiniyela uzama ukuthuthukisa izinqubo "zokuhlanganisa" amadivayisi ngokusekelwe kuzo. Muva nje, kutholwe imiphumela yokuqala - ithimba labathuthukisi abavela eNyuvesi yaseCambridge ngoMashi kumenyezelwe mayelana nokwethulwa ekukhiqizeni i-graphene chips yokuqala. Onjiniyela bathi umshini omusha ungasheshisa ukusebenza kwemishini kagesi ngokuphindwe kashumi.

I-Hafnium dioxide ne-selenide

I-Hafnium dioxide nayo isetshenziswa ekukhiqizeni ama-microcircuits kusukela ngonyaka we-2007. Isetshenziselwa ukwenza ungqimba oluvikelayo esangweni le-transistor. Kodwa namuhla onjiniyela bahlongoza ukuyisebenzisa ukuze kuthuthukiswe ukusebenza kwama-silicon transistors.

“Ukunqoba” Umthetho kaMoore: Transistor Technologies of the Future
/isithombe UFritzchens Fritz PD

Ekuqaleni konyaka odlule, ososayensi baseStanford kutholakele, ukuthi uma isakhiwo se-crystal se-hafnium dioxide sihlelwa kabusha ngendlela ekhethekile, khona-ke kagesi njalo (obhekene nekhono le-medium ukudlulisa insimu kagesi) izokhula izikhathi ezingaphezu kwezine. Uma usebenzisa izinto ezinjalo lapho udala amasango e-transistor, unganciphisa kakhulu ithonya umphumela womhubhe.

Futhi ososayensi baseMelika uthole indlela nciphisa usayizi wama-transistors wesimanje usebenzisa i-hafnium ne-zirconium selenides. Zingasetshenziswa njenge-insulator ephumelelayo yama-transistors esikhundleni se-silicon oxide. I-Selenides inogqinsi oluncane kakhulu (ama-athomu amathathu), kuyilapho igcina igebe elihle lebhendi. Lesi yinkomba enquma ukusetshenziswa kwamandla kwe-transistor. Onjiniyela sebevele sebenayo ukwazile ukudala ama-prototypes ambalwa asebenzayo wamadivayisi asekelwe ku-hafnium ne-zirconium selenides.

Manje onjiniyela badinga ukuxazulula inkinga yokuxhuma ama-transistors anjalo - ukuthuthukisa othintana nabo abancane abafanelekile. Kuphela ngemva kwalokhu kuzokwazi ukukhuluma ngokukhiqizwa ngobuningi.

I-Molybdenum disulfide

I-Molybdenum sulfide ngokwayo iyi-semiconductor empofu, engaphansi kwezakhiwo kune-silicon. Kodwa iqembu lezazi zefiziksi ezivela eNyuvesi yaseNotre Dame lathola ukuthi amafilimu amancane e-molybdenum (ugqinsi lwe-athomu eyodwa) anezici eziyingqayizivele - ama-transistors asekelwe kuwo awadluli okwamanje lapho ecishiwe futhi adinga amandla amancane ukuze ashintshe. Lokhu kuvumela ukuthi basebenze ngama-voltage aphansi.

I-Molybdenum transistor prototype ithuthukisiwe elabhorethri. Lawrence Berkeley ngo-2016. Idivayisi iyi-nanometer eyodwa kuphela ububanzi. Onjiniyela bathi ama-transistors anjalo azosiza ukwelula uMthetho kaMoore.

Futhi i-molybdenum disulfide transistor ngonyaka odlule kwethulwe onjiniyela abavela enyuvesi yaseNingizimu Korea. Ubuchwepheshe kulindeleke ukuthi buthole ukusetshenziswa kumasekethe okulawula we-OLED display. Kodwa-ke, akukakhulunywa okwamanje mayelana nokukhiqizwa okukhulu kwama-transistors anjalo.

Naphezu kwalokhu, abacwaningi abavela eStanford isimangaloukuthi ingqalasizinda yesimanje yokukhiqiza ama-transistors ingabuye yakhiwe ukuze isebenze ngamadivaysi e-“molybdenum” ngezindleko ezincane. Ukuthi kuzokwazi yini ukuqalisa amaphrojekthi anjalo kusazobonakala esikhathini esizayo.

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Source: www.habr.com

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